STU313D

STU313D S a mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) V DSS 30V PRODUCT SUMMARY (P-Channel) V DSS -30V ID 16A R DS(ON) (m Ω) Max 24 @ VGS=10V ID -15A R DS(ON) (m Ω) Max 33 @ VGS=-10V 52 @ VGS=-4.5V 35 @ VGS=4.5V D1/D2 G1 D1 D2 G2 S1 G1 S2 G2 TO-252-4L S1 N-ch S2 P -ch ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM I AS EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous b a N-Channel P-Channel 30 -30 ±20 ±20 TC=25°C TC=70°C 16 12.5 45 L=0.5mH TC=25°C TC=70°C 7.5 14 10 6.5 -55 to 150 -15 -11.5 -43 5.0 6.3 Units V V A A A A mJ W W °C -Pulsed Sigle Pulse Avalanche Current d Sigle Pulse Avalanche Energy d Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS a R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient a 12 60 °C/W °C/W Details are subject to change without notice. Jul,30,2008 1 www.samhop.com.tw STU313D Ver 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance VGS=0V , ID=250uA VDS=24V , VGS=0V 30 1 ±10 V uA uA VGS= ±20V , VDS=0V VDS=VGS , ID=250uA VGS=10V , ID=8A VGS=4.5V , ID=6.5A VDS=5V , ID=8A 1 2 19 26 14 3 24 35 V m ohm m ohm S DYNAMIC CHARACTERISTICS c Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=15V,VGS=0V f=1.0MHz 440 130 70 pF pF pF VDD=15V ID=1A VGS=10V RGEN=6 ohm VDS=15V,ID=8A,VGS=10V VDS=15V,ID=8A,VGS=4.5V VDS=15V,ID=8A, VGS=10V 10 11.5 17 22 8.3 4.3 1.4 2.1 ns ns ns ns nC nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage b VGS=0V,IS=1A 0.77 1 1.3 A V Jul,30,2008 2 www.samhop.com.tw STU313D Ver 1.0 P-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS=0V , ID=-250uA VDS=-24V , VGS=0V -30 -1 ±10 V uA uA VGS= ±20V , VDS=0V VDS=VGS , ID=-250uA VGS=-10V , ID=-7.5A VGS=-4.5V , ID=-6A VDS=-10V , ID=-7.5A -1 -1.7 26 39 10 -3 33 52 V m ohm m ohm S DYNAMIC CHARACTERISTICS CISS COSS CRSS Input Capacitance Output Capacitance Reverse Transfer Capacitance c VDS=-15V,VGS=0V f=1.0MHz 815 225 130 pF pF pF SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=-15V ID=-1A VGS=-10V RGEN=6 ohm VDS=-15V,ID=-7.5A,VGS=-10V VDS=-15V,ID=-7.5A,VGS=-4.5V VDS=-15V,ID=-7.5A, VGS=-10V 11.8 18 65 39 16 7.8 1.6 4.8 ns ns ns ns nC nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage b VGS=0V,IS=-2A -0.78 -2 -1.3 A V Notes _ a.Surface Mounted on FR4 Board,t < 10sec. _ _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13) Jul,30,2008 3 www.samhop.com.tw S TU313D Ver 1.0 N-Channel 35 VGS=10V VGS=4.5V VGS=5V 20 I D, Drain Current(A) 28 21 VGS=3.5V I D, Drain Current(A) VGS=4V 16 12 14 8 Tj=125 C 4 0 -55 C 25 C 7 VGS=3V 0 0 0.5 1 1.5 2 2.5 3 0 0.7 1.4 2.1 2.8 3.5 4.2 V DS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 60 50 Figure 2. Transfer Characteristics 2.0 1.8 1.6 1.4 1.2 1.0 0.8 V G S =4.5V I D =6.5A V G S =10V I D =8A RDS(on)(m Ω) 40 VGS=4.5V 30 20 VGS=10V 10 1 1 R DS(on), On-Resistance Normalized 7 14 21 28 35 0 25 50 75 100 125 150 T j ( °C ) I D, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.3 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 Vth, Normalized Gate-Source Threshold Voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 VDS=VGS ID=250uA ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -50 -25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature 4 Figure 6. Breakdown Voltage Variation with Temperature Jul,30,2008 www.samhop.com.tw S TU313D Ver 1.0 60 50 20.0 Is, Source-drain current(A) ID=8A 10.0 R DS(on)(m Ω) 40 30 20 10 0 75 C 125 C 25 C 125 C 75 C 25 C 0 2 4 6 8 10 1.0 0.4 0.6 0.8 1.0 1.2 1.4 V GS, Gate-to-Source Voltage(V) V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 600 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) 500 C, Capacitance(pF) Ciss 400 300 200 Coss 100 Crss 0 0 5 10 15 20 25 30 8 6 4 2 0 0 VDS=15V ID=8A 1 2 3 4 5 6 7 8 9 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 600 100 )L im it 10 10 DC 1m m s s Switching Time(ns) 100 60 I D, Drain Current(A) Tr TD(off ) TD(on) Tf 10 RD ON S( 0u s 10 VDS=15V,ID=1A VGS=10V 1 V G S =10V S ingle P ulse T c=25 C 1 1 6 10 60 100 300 600 0.1 0.1 1 10 100 Rg, Gate Resistance(Ω) VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Jul,30,2008 5 www.samhop.com.tw STU313D Ver 1.0 15V V ( BR )D S S tp VDS L D R IVE R RG 20V D .U .T IA S tp + - VD D A 0.0 1 IAS Unclamped Inductive Test Circuit F igure 13a. Unclamped Inductive Waveforms F igure 13b. 2 1 D=0.5 Normalized Transient Thermal Resistance 0.2 0.1 0.1 0.05 0.02 0.01 S ING LE P ULS E P DM t1 t2 1. 2. 3. 4. R J A (t)=r (t) * R J A R J A =S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Jul,30,2008 6 www.samhop.com.tw S TU313D Ver 1.0 P-Channel 30 V G S =-10V V G S =-4.5V 20 -I D, Drain Current(A) V G S =-4V 18 V G S =-3.5V -I D, Drain Current(A) 24 V G S =-5V 16 12 12 6 8 T j=125 C -55 C 25 C 4 0 V G S =-3V 0 0 0.5 1 1.5 2 2.5 3 0 0.8 1.6 2.4 3.2 4.0 4.8 -V DS, Drain-to-Source Voltage(V) -V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 120 Figure 2. Transfer Characteristics 1.5 R DS(on), On-Resistance Normalized 100 1.4 1.3 1.2 1.1 1.0 0.8 V G S =-10V I D =-7.5A RDS(on)(m Ω) 80 60 V G S =-4.5V 40 20 0 V G S =-10V 1 V G S =-4.5V I D =-6A 6 12 18 24 30 0 25 50 75 100 125 150 T j ( °C ) -ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.3 Figure 4. On-Resistance Variation with Drain Current and Temperature 1.15 -BVDSS, Normalized Drain-Source Breakdown Voltage -Vth, Normalized Gate-Source Threshold Voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 V DS =V G S I D =-250uA I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 100 125 150 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature 7 Figure 6. Breakdown Voltage Variation with Temperature Jul,30,2008 www.samhop.com.tw S TU313D Ver 1.0 120 100 20.0 -Is, Source-drain current(A) I D =-7.5A 10.0 R DS(on)(m Ω) 80 60 40 20 0 25 C 75 C 125 C 25 C 125 C 75 C 0 2 4 6 8 10 1.0 0.4 0.6 0.8 1.0 1.2 1.4 -V GS, Gate-to-Source Voltage(V) -VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 1200 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 -V GS, Gate to Source Voltage(V) 1000 C, Capacitance(pF) C is s 800 600 400 C os s 200 C rs s 0 0 5 10 15 20 25 30 8 6 4 2 0 0 V DS =-15V I D =-20A 2 4 6 8 10 12 14 16 -V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 100 L N) im it 10 1m 10 m DC s s 600 Tr -ID, Drain Current(A) Switching Time(ns) 100 60 TD(off ) TD(on) Tf 10 R DS (O 0u s 10 VDS=-15V,ID=-1A VGS=10V 1 V G S =10V S ingle P ulse T c=25 C 1 1 6 10 60 100 300 600 0.1 0.1 1 10 100 Rg, Gate Resistance(Ω) -VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Jul,30,2008 8 www.samhop.com.tw STU313D Ver 1.0 15V V ( BR )D S S tp VDS L D R IVE R RG 20V D .U .T IA S tp + - VD D A 0.0 1 IAS Unclamped Inductive Test Circuit F igure 13a. Unclamped Inductive Waveforms F igure 13b. 2 1 D=0.5 Normalized Transient Thermal Resistance 0.2 0.1 0.1 0.05 0.02 0.01 S ING LE P ULS E P DM t1 t2 1. 2. 3. 4. R J A (t)=r (t) * R J A R J A =S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Jul,30,2008 9 www.samhop.com.tw S TU313D Ver 1.0 PACKAGE OUTLINE DIMENSIONS E b2 L3 1 D1 E1 D H 1 L4 b1 e b 2 3 4 5 DETAIL "A" A C TO-252-4L L2 L L1 A1 DETAIL "A" INCHES MIN 0.087 0.000 0.017 0.025 0.205 0.018 0.236 0.205 0.252 0.173 0.050 0.370 0.055 0.108 0.020 0.035 0.025 0° 7° MAX 0.094 0.005 0.027 0.031 0.215 0.023 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.050 0.040 10° REF. SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.200 0.000 0.440 0.635 5.210 0.450 6.000 5.200 6.400 4.400 1.270 9.400 1.397 2.743 0.508 0.890 0.640 0° 7° MAX 2.387 0.127 0.680 0.787 5.460 0.584 6.223 5.515 6.731 5.004 BSC 10.400 1.770 REF. REF. 1.270 1.010 10 ° REF. Jul,30,2008 10 www.samhop.com.tw S TU313D Ver 1.0 TO-252-4L Tape and Reel Data TO-252-4L Carrier Tape K0 T 6 °Max B0 4 ° Max SECTION B - B A0 SECTION A - A B D1 P1 P2 E1 E2 UNIT: PACKAGE TO-252 (16 A0 6.96 0.1 B0 10.49 0.1 K0 2.79 0.1 D0 2 D1 1.5 + 0.1 -0 B A A P0 D0 E FEED DIRECTION E 16.0 0.3 E1 1.75 0.1 E2 7.5 0.15 P0 8.0 0.1 P1 4.0 0.1 P2 2.0 0.15 T 0.3 0.05 TO-252-4L Reel T S V R M N G H W UNIT: TAPE SIZE 16 REEL SIZE 330 M 330 0.5 N 97 1.0 W 17.0 + 1.5 -0 T 2.2 H 13.0 + 0.5 - 0.2 K 10.6 S 2.0 0.5 G R K V Jul,30,2008 11 www.samhop.com.tw