0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
STU408D

STU408D

  • 厂商:

    SAMHOP

  • 封装:

  • 描述:

    STU408D - Dual N-Channel E nhancement Mode F ield E ffect Transistor - SamHop Microelectronics Corp.

  • 数据手册
  • 价格&库存
STU408D 数据手册
S amHop Microelectronics C orp. S T U408D J uly. 2 5 2 0 0 6 D ua l N -C ha nne l E nha nc e me nt Mode F ie ld E ffe c t T ra ns is tor P R O D U C T S U MMA R Y V DS S 40V F E AT U R E S ( m W ) Max S upe r high de ns e c e ll de s ign for low R D S (O N ) . ID 1 6A R DS (ON) R ugge d a nd re lia ble . T O 2 5 2 -4 L pa c ka ge . E S D P rote c te d. D1 D2 30 @ V G S = 1 0V 40 @ V G S =4.5V D 1 /D 2 G1 G2 S1 G1 S2 T O -2 5 2 -4 L G2 S1 N-ch S2 N-ch A B S O L U T E MA X IMU M R AT IN G S ( T A=2 5 C unle s s othe rwis e note d) P a ra me te r D ra in-S ourc e V olta ge G a te -S ourc e V olta ge D ra in C urre nt-C ontinuous @ T a -P uls e d a S ymbol V DS VGS 25 C 70 C ID IDM IS T a = 25 C T a =7 0 C PD TJ, TS TG L imit 40 20 16 13.8 50 8 11 7. 7 -5 5 to 1 7 5 U nit V V A A A A W C D ra in-S ourc e D iode F orwa rd C urre nt Ma ximum P owe r D is s ipa tion O pe ra ting J unc tion a nd S tora ge Te mpe ra ture R a nge T H E R MA L C H A R A C T E R I S T I C S T he rma l R e s is ta nc e , J unc tion-to-C a s e T he rma l R e s is ta nc e , J unc tion-to-A mbie nt 1 R JC R JA 13. 6 120 C /W C /W S T U408D E L E C T R I C A L C H A R A C T E R I S T I C S ( T A =2 5 C unle s s othe rwis e note d) P a ra me te r O F F C H A R A C T E R IS T IC S D ra in-S ourc e B re a kdown V olta ge Z e ro G a te V olta ge D ra in C urre nt G a te -B ody L e a ka ge B V DS S IDS S IG S S V G S (th) R DS (O N ) ID(O N ) gF S C IS S C OS S CRSS c S ymbol C ondition V G S = 0 V , I D = 2 5 0 uA V D S = 3 2 V, V G S = 0 V V G S = 2 0 V, V D S = 0 V V D S = V G S , I D = 2 5 0 uA V G S = 1 0 V, I D = 8 A V G S = 4 . 5 V, I D = 6 A V D S = 5 V, V G S = 4 . 5 V V D S = 5 V, I D = 8 A Min Typ C Ma x U nit 40 1 10 1 1. 8 22 30 10 15 735 120 70 3. 0 30 40 V uA uA V m-ohm m-ohm O N C H A R A C T E R IS T IC S b G a te T hre s hold V olta ge D ra in-S ourc e O n-S ta te R e s is ta nc e O n-S ta te D ra in C urre nt F orwa rd T ra ns c onduc ta nc e A S PF PF PF D Y N A MI C C H A R A C T E R I S T I C S c Input C a pa c ita nc e O utput C a pa c ita nc e R e ve rs e T ra ns fe r C a pa c ita nc e V DS =20V, V G S = 0V f =1. 0MH Z S W IT C H IN G C H A R A C T E R IS T IC S T urn-O n D e la y T ime R is e T ime T urn-O ff D e la y T ime F a ll T ime Tota l G a te C ha rge (10V ) Tota l G a te C ha rge (4. 5V ) G a te -S ourc e C ha rge G a te -D ra in C ha rge tD(O N) tr tD(O F F ) tf Qg Qg Q gs Q gd V D D = 2 0 V, ID = 3A , V G S = 1 0 V, R G E N = 3 o hm 13 15 26 10 15 7. 2 2. 0 3. 8 ns ns ns ns nC nC nC nC V DS =20V, ID = 8A , V G S =10V 2 S T U408D E L E C T R I C A L C H A R A C T E R I S T I C S ( T C =2 5 C unle s s othe rwis e note d) P a ra me te r D iode F orwa rd V olta ge S y m bo l VSD C ondition V G S = 0 V, I s = 8 A M in T y p M a x U n it 0. 94 1. 3 V D R A IN -S O U R C E D IO D E C H A R A C T E R IS T IC S a N ote s a . P uls e Te s t: P uls e W idth 300us , D uty C yc le 2% . b. G ua ra nte e d by de s ign, not s ubje c t to produc tion te s ting. 30 V G S =4.5V 25 12 15 ID , D ra in C urre nt( A ) 20 V G S =10V I D , D ra in C urre nt ( A ) V G S =3.5V V G S =8V 9 T j=125 C 6 25 C 3 -55 C 0 0 0. 8 1. 6 2. 4 3. 2 4. 0 4. 8 15 10 5 0 V G S =3V 0 0. 5 1 1. 5 2 2. 5 3 V D S , D ra in-to-S ourc e V olta ge ( V ) V G S , G a te -to-S ourc e V olta ge ( V ) F igure 1 . O utput C ha ra c te ris tic s 60 F igure 2 . T ra ns fe r C ha ra c te ris tic s 2. 0 R DS (ON) , O n-R e s is ta nc e N ormalized 50 1. 8 1. 6 1. 4 1. 2 1. 0 0. 0 V G S =4.5V I D =6A V G S =10V I D =8A R D S ( o n ) ( m W) 40 30 20 V G S =4.5V V G S =10V 10 0 1 6 12 18 24 30 0 25 50 75 100 125 150 T j( C ) I D , D ra in C urre nt ( A ) T j, J unction T emperature ( C ) F igure 3 . O n-R e s is ta nc e vs . D ra in C urre nt a nd G a te V olta ge F igure 4 . O n-R e s is ta nc e Va ria tion with D ra in C urre nt a nd Te mpe ra ture 3 S T U408D V th, Normalized G ate-S ource T hres hold V oltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA B V DS S , Normalized Drain-S ource B reakdown V oltage 1.40 I D =250uA 1.30 1.20 1.10 1.00 0.90 0.80 -50 -25 0 25 50 75 100 125 150 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 60 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 I D =8A Is , S ource-drain current (A) 50 1 25 C R D S ( o n ) ( m W) 10.0 40 30 20 10 0 75 C 25 C 25 C 1 25 C 75 C 0 1.0 2 4 6 8 10 0.4 0.6 0.8 1.0 1.2 1.4 V G S , G a te - S ourc e V olta ge ( V ) V S D , B ody Diode F orward V oltage (V ) F igure 7 . O n-R e s is ta nc e vs . G a te -S ourc e V olta ge F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T U408D 1200 V G S , G ate to S ource V oltage (V ) 10 8 6 4 2 0 V DS =20V I D =8A 1000 C , C a pa c ita nc e ( pF ) C is s 800 600 400 C os s 200 C rs s 0 0 5 10 15 20 25 30 6 0 2 4 6 8 10 12 14 16 V D S , D ra in-to S ourc e V olta ge ( V ) Q g, T otal G ate C harge (nC ) F igure 9 . C a pa c ita nc e F igure 10. G ate C harge 300 Tr 100 80 I D , Drain C urrent (A) it 10 10 ms S witching T ime (ns ) 100 60 10 T D(off) T D(on) Tf 10 R DS ( ) ON L im 1m s 1s DC 0m s 1 1 V DS =20V ,ID=1A V G S =10V 1 0.5 0.1 V G S =10V S ingle P ulse T c=25 C 6 10 60 100 300 600 1 10 30 60 R g, G ate R es is tance ( W) V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics 2 F igure 12. Maximum S afe O perating Area r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 P DM t1 1. 2. 3. 4. 10 10 10 t2 R θJ A ( t)=r (t) * R θJ A R θJ A =S ee Datas heet T J M-T A = P DM* R θJ A ( t) Duty C ycle, D=t1/t2 1 10 10 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 S T U408D P A C K A G E OUT L INE DIME NS IONS TO-252-4L A B H C M K J D L S P G REF . Millimeters MIN MAX A B C D P S G H J K L M 6.40 5.2 6.80 2.20 0.50 0.40 2.20 0.45 0 0.90 5.40 6.80 5.50 10.20 3.00 0.80 0.60 2.40 0.60 0.15 1.50 5.80 1.27 REF. 6 S T U408D TO-252-4L Tape and Reel Data TO-252-4L Carrier Tape 6 4 TO-252-4L Reel UNIT:㎜ 7
STU408D 价格&库存

很抱歉,暂时无法提供与“STU408D”相匹配的价格&库存,您可以联系我们找货

免费人工找货