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STU432S

STU432S

  • 厂商:

    SAMHOP

  • 封装:

  • 描述:

    STU432S - N-Channel Logic Level Enhancement Mode Field Effect Transistor - SamHop Microelectronics C...

  • 数据手册
  • 价格&库存
STU432S 数据手册
STU/D432S SamHop Microelectronics Corp. Nov,19,2007 ver1.4 N-Channel Logic Level Enhancement Mode Field Effect Transistor 4 PRODUCT SUMMARY VDSS 40V FEATURES ( m W ) Max ID 50A RDS(ON) Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. D 9 @ VGS = 10V D G S G D S G STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @Ta -Pulsed a Drain-Source Diode Forward Current Avalanche Current Avalanche Energy c a Symbol VDS VGS a Limit 40 20 50 100 20 23 130 50 -55 to 175 Unit V V A A A A mJ W C 25 C ID IDM IS I AS E AS PD TJ, TSTG b c Maximum Power Dissipation Ta= 25 C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W 1 STU/D432S ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter 5 Symbol BVDSS IDSS IGSS a Condition V G S = 0 V , I D = 2 5 0 uA V D S = 3 2 V , V G S =0 V V G S = 2 0 V, V D S = 0 V V D S = V G S , I D = 2 5 0 uA V G S = 1 0V , ID = 10A V G S = 4 . 5 V, I D = 5 A VDS = 10V, VGS = 10V VDS = 10V, ID = 10A Min Typ Max Unit 40 1 V uA 100 nA 1.25 1.6 7 9 30 28 1130 240 145 3 9 11 V m ohm m ohm OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) ID(ON) gFS b Drain-Source On-State Resistance On-State Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDS =15V, VGS = 0V f =1.0MHZ SWITCHING CHARACTERISTICS b Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 15V ID = 10 A VGS = 10V RGEN = 3.3 ohm VDS =15V, ID =10A,VGS =10V VDS =15V, ID =10A,VGS =4.5V VDS =15V, ID = 10A VGS =10V 2 18 22 61 9.6 23.5 11.5 2.7 3.2 ns ns ns ns nC nC nC nC S T U/D432S E L E C T R I C A L C H A R A C T E R I S T I C S ( T C =2 5 C unle s s othe rwis e note d) P a ra me te r D iode F orwa rd V olta ge S y m bo l VSD C ondition V G S = 0 V, I s = 2 0 A M in T y p M a x U n it 0. 91 1. 3 V D R A IN -S O U R C E D IO D E C H A R A C T E R IS T IC S a N ote s a . P uls e Te s t: P uls e W idth 300us , D uty C yc le 2% . b. G ua ra nte e d by de s ign, not s ubje c t to produc tion te s ting. 100 V G S =10V 80 V G S =4V 48 V G S =3.5V 60 c. Start ing TJ= 25 c , L = 0.5 mH , RG = 2 5 W , I AS = 23 A , VDD < V(BR)DSS ( See Figure13 ) 60 ID , D ra in C urre nt( A ) I D , D ra in C urre nt ( A ) 36 -55 C 24 T j=125 C 12 0 25 C 40 V G S =3V 20 V G S =2.5V 0 0 0. 5 1 1. 5 2 2. 5 3 0 0. 7 1. 4 2. 1 2. 8 3. 5 4. 2 V D S , D ra in-to-S ourc e V olta ge ( V ) V G S , G a te -to-S ourc e V olta ge ( V ) F igure 1 . O utput C ha ra c te ris tic s 20 F igure 2 . T ra ns fe r C ha ra c te ris tic s 2. 0 R DS (ON) , O n-R e s is ta nc e N ormalized 1. 8 1. 6 1. 4 1. 2 1. 0 0 V G S =10V I D =10A 16 R D S ( o n ) ( m W) 12 8 4 V G S =4.5V V G S =4.5V I D =5A V G S =10V 1 1 20 40 60 80 100 0 25 50 75 100 125 150 T j( C ) I D , D ra in C urre nt ( A ) T j, J unction T emperature ( C ) F igure 3 . O n-R e s is ta nc e vs . D ra in C urre nt a nd G a te V olta ge F igure 4 . O n-R e s is ta nc e Va ria tion with D ra in C urre nt a nd Te mpe ra ture 3 S T U/D432S B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA 1.40 I D =250uA 1.30 1.20 1.10 1.00 0.90 0.80 -50 -25 0 25 50 75 100 125 150 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 30 F igure 6. B reakdown V oltage V ariation with T emperature 60 I D =10A Is , S ource-drain current (A) 25 R D S ( o n ) ( m W) 20 1 25 C 15 10 75 C 5 0 25 C 20 12 5 C 25 C 10 0 2 4 6 8 10 1 0 0.24 0.48 0.72 0.96 1.20 V G S , G a te - S ourc e V olta ge ( V ) V S D , B ody Diode F orward V oltage (V ) F igure 7 . O n-R e s is ta nc e vs . G a te -S ourc e V olta ge F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 STU/D432S 1800 1500 Ciss 10 VGS, Gate to Source Voltage (V) 8 6 4 2 0 VDS=15V ID=10A C, Capacitance (pF) 1200 900 600 Coss 300 Crss 0 0 5 10 15 20 25 30 6 0 4 8 12 16 20 24 28 32 VDS, Drain-to Source Voltage ( V ) Qg, Total Gate Charge (nC) Figure 9. Capacitance Figure 10. Gate Charge 350 600 100 Lim it (O 10 Switching Time (ns) ID, Drain Current (A) 100 60 10 TD(off ) Tr Tf TD(on) 1m 10 s 10 RD 0m ms N) s S 1s DC 1 1 V DS =15V ,ID=10A V G S =10V 1 0.5 0.1 VGS=10V Single Pulse Tc=25 C 6 10 60 100 300 600 1 10 30 60 Rg, Gate Resistance (W) VDS, Drain-Source Voltage (V) Figure 11.switching characteristics Figure 12. Maximum Safe Operating Area 5 STU/D432S 15 V V ( B R )D S S tp D R IV E R VDS L RG 20V D .U .T IA S tp + - VD D A 0.0 1 IAS Unc lamped Induct i ve Test Circu i t F igure 13a. Unc lamped Induct i ve Waveforms F igure 13b. 2 1 r(t),Normalized Effective Transient Thermal Impedance D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 10 -5 -4 -3 -2 -1 P DM t1 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = PDM* RθJA (t) 4. Duty Cycle, D=t1/t2 10 10 10 1 10 10 Square Wave Pulse Duration (sec) Figure 14. Normalized Thermal Transient Impedance Curve 6 S T U/D432S 7 S T U/D432S E b3 L3 A C2 E1 D H L4 e b2 b L2 L L1 A1 C2 b b2 b3 L2 A1 L4 L L1 L3 10 483 0.814 864 232 0.508 6.000 6.400 4.902 2.290 9.601 0.010 0.066 1.397 2.743 1.100 387 0.584 0.889 1.092 436 REF. 00 6.604 5.004 BSC 210 0.127 0.940 1.651 REF. REF. 7 0.019 32 4 6 0.020 36 0.193 0.090 78 0.0004 0.026 0.055 0.108 0.043 4 0.023 0.035 43 4 REF. 4 0.197 BSC 402 0.005 0.037 0.065 REF. REF. 8 S T U/D432S TO-251 Tube TO251 Tube/TO-252 Tape and Reel Data " A" TO-252 Carrier Tape UNIT:㎜ PACKAGE TO-252 (16 ㎜) A0 6.80 ±0.1 B0 10.3 ±0.1 K0 2.50 ±0.1 D0 ψ2 D1 ψ1.5 + 0.1 -0 E 16.0 0.3± E1 1.75 0.1± E2 7.5 ±0.15 P0 8.0 ±0.1 P1 4.0 ±0.1 P2 2.0 ±0.15 T 0.3 ±0.05 TO-252 Reel S UNIT:㎜ TAPE SIZE 16 ㎜ REEL SIZE ψ 330 M ψ330 ± 0.5 N ψ97 ± 1.0 W 17.0 + 1.5 -0 T 2.2 H ψ13.0 + 0.5 - 0.2 K 10.6 S 2.0 ±0.5 G R V 9
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