STU5025NLS

S T U/D5025NLS S amHop Microelectronics C orp. D ec 30 , 2 0 0 5 N -C ha nne l L ogic L e ve l E nha nc e me nt Mode F ie ld E ffe c t T ra ns is tor P R O D U C T S U MMA R Y V DS S 2 5V F E AT U R E S ( mW) ID 5 0A R DS (ON) Max S upe r high de ns e c e ll de s ign for low R D S (O N ) . 8 @ V G S = 1 0V 1 2 @ V G S = 4 .5V R ugge d a nd re lia ble . T O -2 5 2 a nd T O -2 5 1 P a c ka ge . D D G S G D S G S T U S E R IE S T O -2 5 2 A A ( D -P A K ) S T D S E R IE S T O -2 5 1 ( l-P A K ) S A B S O L U T E MA X IMU M R AT IN G S ( T a =2 5 C unle s s othe rwis e note d) P a ra me te r D ra in-S ourc e V olta ge R a ting D ra in-S ourc e V olta ge G a te -S ourc e V olta ge D ra in C urre nt-C ontinuous -P uls e d a S ymbol V s pike c V DS VGS @ T C =2 5 C ID IDM IS PD TJ, TS TG L imit 30 25 20 50 200 20 50 -5 5 to 1 7 5 U nit V V V A A A W C D ra in-S ourc e D iode F orwa rd C urre nt Ma ximum P owe r D is s ipa tion @ Tc=25 C O pe ra ting a nd S tora ge Te mpe ra ture R a nge T H E R MA L C H A R A C T E R I S T I C S T he rma l R e s is ta nc e , J unc tion-to-C a s e T he rma l R e s is ta nc e , J unc tion-to-A mbie nt 1 R JC R JA 3 50 C /W C /W S T U/D5025NLS E L E C T R I C A L C H A R A C T E R I S T I C S ( T C =2 5 C unle s s othe rwis e note d) P a ra me te r 5 S ymbol B V DS S IDS S IG S S V G S (th) R DS (O N ) ID(O N ) gF S C IS S C OS S CRSS Rg b C ondition V G S = 0 V , I D = 2 5 0 uA V D S = 2 0 V, V G S = 0 V V G S = 2 0 V, V D S = 0 V V D S = V G S , I D = 2 5 0 uA V G S =1 0 V , I D = 2 0 A V G S =4 . 5 V , I D = 1 0 A V D S = 1 0 V, V G S = 1 0 V V D S = 1 0 V, I D = 1 0 A Min Typ C Ma x U nit 25 1 V uA 1 0 0 nA 1 1. 7 6. 5 9 50 22 1150 340 185 0. 33 22 27 42 20 29 13 3. 5 8 3 8 12 V m ohm m ohm O F F C H A R A C T E R IS T IC S D ra in-S ourc e B re a kdown V olta ge Z e ro G a te V olta ge D ra in C urre nt G a te -B ody L e a ka ge O N C H A R A C T E R IS T IC S a G a te T hre s hold V olta ge D ra in-S ourc e O n-S ta te R e s is ta nc e O n-S ta te D ra in C urre nt F orwa rd T ra ns c onduc ta nc e A S PF PF PF D Y N A MI C C H A R A C T E R I S T I C S b Input C a pa c ita nc e O utput C a pa c ita nc e R e ve rs e T ra ns fe r C a pa c ita nc e G a te re s is ta nc e V DS =15V, V G S = 0V f =1. 0MH Z V G S =0V, V DS = 0V , f=1. 0MH Z V DD = 15V ID = 1 A V G S = 10V R G E N = 6 o hm V DS =15V, ID =20A , V G S =10V V DS =15V, ID =20A, V G S =4. 5V G a te -S ourc e C ha rge G a te -D ra in C ha rge Q gs Q gd V DS =15V, ID = 20A V G S =10V 2 ohm S W IT C H IN G C H A R A C T E R IS T IC S T urn-O n D e la y T ime R is e T ime T urn-O ff D e la y T ime F a ll T ime Tota l G a te C ha rge tD(O N) tr tD(O F F ) tf Qg ns ns ns ns nC nC nC nC S T U/D5025NLS E L E C T R I C A L C H A R A C T E R I S T I C S ( T C =2 5 C unle s s othe rwis e note d) P a ra me te r D iode F orwa rd V olta ge S y m bo l VSD C ondition V G S = 0 V, I s = 1 0 A M in T y p M a x U n it 0. 85 1. 3 V D R A IN -S O U R C E D IO D E C H A R A C T E R IS T IC S a N ote s a . P uls e Te s t: P uls e W idth 300us , D uty C yc le 2% . b. G ua ra nte e d by de s ign, not s ubje c t to produc tion te s ting. c . G ua ra nte e d whe n e xte rna l R g=6 ohm a nd tf < tf ma x 60 V G S =4V 48 V G S =4.5V 20 25 C 15 T j=125 C 10 -55 C ID , D ra in C urre nt( A ) 36 V G S =10V V G S =3.5V 24 12 0 I D , D ra in C urre nt ( A ) V G S =8V 5 V G S =3V 0 0 0. 5 1 1. 5 2 2. 5 3 0 0. 7 1. 4 2. 1 2. 8 3. 5 4. 2 V D S , D ra in-to-S ourc e V olta ge ( V ) V G S , G a te -to-S ourc e V olta ge ( V ) F igure 1 . O utput C ha ra c te ris tic s 12 1. 5 F igure 2 . T ra ns fe r C ha ra c te ris tic s R DS (ON) , O n-R e s is ta nc e N ormalized 10 V G S =4.5V 1. 4 1. 3 1. 2 1. 1 1. 0 0. 0 V G S =10V I D =20A R D S ( o n ) ( m W) 8 6 4 2 0 V G S =10V V G S =4.5V I D =10A 1 12 24 36 48 60 0 25 50 75 100 125 150 T j( C ) I D , D ra in C urre nt ( A ) T j, J unction T emperature ( C ) F igure 3 . O n-R e s is ta nc e vs . D ra in C urre nt a nd G a te V olta ge F igure 4 . O n-R e s is ta nc e Va ria tion with D ra in C urre nt a nd Te mpe ra ture 3 S T U/D5025NLS B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 42 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 I D =20A Is , S ource-drain current (A) 35 10.0 75 C 25 C R D S ( o n ) ( m W) 28 21 75 C 14 7 25 C 0 0 2 4 6 8 10 1 25 C 1 25 C 1.0 0.4 0.6 0.8 1.0 1.2 1.4 V G S , G a te - S ourc e V olta ge ( V ) V S D , B ody Diode F orward V oltage (V ) F igure 7 . O n-R e s is ta nc e vs . G a te -S ourc e V olta ge F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T U/D5025NLS 1800 V G S , G ate to S ource V oltage (V ) 10 8 6 4 2 0 V DS =15V I D =20A 1500 C , C a pa c ita nc e ( pF ) C is s 1200 900 600 300 C rs s 0 0 5 10 15 20 25 30 C os s 6 0 5 10 15 20 25 30 35 40 V D S , D ra in-to S ourc e V olta ge ( V ) Q g, T otal G ate C harge (nC ) F igure 9 . C a pa c ita nc e F igure 10. G ate C harge 220 S witching T ime (ns ) Tf 600 100 N) (O S I D , Drain C urrent (A) 100 60 10 T D(off) Tr T D(on) L im 10 DC 10 1m ms it s 0m 10 RD s 1s 1 1 V DS =15V ,ID=1A V G S =10V 1 0.5 0.1 V G S =10V S ingle P ulse T c=25 C 6 10 60 100 300 600 1 10 30 60 R g, G ate R es is tance ( W) V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics F igure 12. Maximum S afe O perating Area 5 S T U/D5025NLS V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 6 S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 P DM t1 1. 2. 3. 4. 10 10 10 t2 R θJ A ( t)=r (t) * R θJ A R θJ A =S ee Datas heet T J M-T A = P DM* R θJ A ( t) Duty C ycle, D=t1/t2 1 10 10 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 6 S T U/D5025NLS 7 S T U/D5025NLS 5 95 7 84 9 6.00 35 05 85 0.94 4 3 0 9 7 30 3 9 36 3 41 3 3 5 1 4 L2 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF. 0.090 82 56 6 0.024 BSC 398 0.064 33 REF. 8 S T U/D5025NLS TO-251 Tube TO251 Tube/TO-252 Tape and Reel Data " A" TO-252 Carrier Tape UNIT:㎜ PACKAGE TO-252 (16 ㎜) A0 6.80 ±0.1 B0 10.3 ±0.1 K0 2.50 ±0.1 D0 ψ2 D1 ψ1.5 + 0.1 -0 E 16.0 0.3± E1 1.75 0.1± E2 7.5 ±0.15 P0 8.0 ±0.1 P1 4.0 ±0.1 P2 2.0 ±0.15 T 0.3 ±0.05 TO-252 Reel S UNIT:㎜ TAPE SIZE 16 ㎜ REEL SIZE ψ 330 M ψ330 ± 0.5 N ψ97 ± 1.0 W 17.0 + 1.5 -0 T 2.2 H ψ13.0 + 0.5 - 0.2 K 10.6 S 2.0 ±0.5 G R V 9