CIG32H2R2MNE

Ver. 201306 Multilayer Power Inductor CIG32H2R2MNE (3225/ EIA 1210) APPLICATION Mobile phones, DSC, DVC, PDA etc. for DC-DC Converter FEATURES




RECOMMENDED LAND PATTERN High Current Type Low DC resistance Magnetically shielded structure Free of all RoHS-regulated substances Monolithic structure for high reliability DIMENSION Dimension [mm] TYPE L 32 W 3.2±0.15 2.5±0.15 T D 1.1±0.1 0.5±0.3 DESCRIPTION Part no. CIG32H2R2MNE Rated Current (A)＊1 Rated Current (A)＊2 Resistance(Ω) Typ. Max. 0.125±25 % 2.90 1.60 Size Inductance DC (inch/mm) (uH)@1MHz 1210/3225 2.2±20% ※Rated Current (A)＊1: DC current value when Inductance drops to 30% of nominal Inductance value (ONLY REFERENCE) ※Rated Current (A)＊2: DC current value when the self-generation of heat rises to 40℃ (Reference ambient temperature:25℃) ※Operating temperature range: –40 to +125°C ( Including self-temperature rise) ※Test equipment: Agilent :E4991A+16092A CHARACTERISTIC DATA 1) Frequency characteristics (Typ.) 2) DC Bias characteristics (Typ.) Ver. 201306 PRODUCT IDENTIFICATION CI (1) (1) (3) (5) (7) (8) G (2) 32 (3) H (4) 2R2 (5) M (6) N (7) E (8) Chip Inductor (2) Power Inductor Dimension (4) Product Series (H:High Current Type) Inductance (2R2:2.2uH) (6) Tolerance (M:±20%) Thickness option(N:Standard, A:Thinner than standard, B:Thicker than standard) Packaging(C:paper tape, E:embossed tape) RECOMMENDED SOLDERING CONDITION REFLOW SOLDERING FLOW SOLDERING PACKAGING Packaging Style Quantity(pcs/reel) Embossed Taping 2,500 Any data in this sheet are subject to change, modify or discontinue without notice. The data sheets include the typical data for design reference only. If there is any question regarding the data sheets, please contact our sales personnel or application engineers.