K4B2G1646C

Apr. 2010 Consumer Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. For updates or additional information about Samsung products, contact your nearest Samsung office. All brand names, trademarks and registered trademarks belong to their respective owners. ⓒ 2010 Samsung Electronics Co., Ltd. All rights reserved. -1- Product Guide 1. CONSUMER MEMORY ORDERING INFORMATION 1 2 3 4 5 6 7 8 9 10 Apr. 2010 Consumer Memory 11 K4 XXXXXXXX-XXXX SAMSUNG Memory DRAM Product Density & Refresh Organization 1. SAMSUNG Memory : K 2. DRAM : 4 3. Product S H T B D J : SDRAM : DDR SDRAM : DDR2 SDRAM : DDR3 SDRAM : GDDR : GDDR3 7. Interface ( VDD, VDDQ) 2 8 Q 6 K : LVTTL (3.3V, 3.3V) : SSTL_2 (2.5V, 2.5V) : SSTL_18 (1.8V, 1.8V) : SSTL_15 (1.5V, 1.5V) : POD_18 (1.8V, 1.8V) Speed Temperature & Power Package Type Revision Interface (VDD, VDDQ) Bank 8. Revision M A B C D E F G : 1st Gen. : 2nd Gen. : 3rd Gen. : 4th Gen. : 5th Gen. : 6th Gen. : 7th Gen. : 8th Gen. H I J K L N O S : 9th Gen. : 10th Gen. : 11th Gen. : 12th Gen. : 13th Gen. : 14th Gen. : 15th Gen. : 19th Gen. 4. Density & Refresh 64 : 64Mb, 4K/64ms 28 : 128Mb, 4K/64ms 56 : 256Mb, 8K/64ms 51 : 512Mb, 8K/64ms 1G : 1Gb, 8K/64ms 2G : 2Gb, 8K/64ms 10 : 1Gb, 8K/32ms 9. Package Type U Z : TSOPII (Lead-free) 100TQFP(Lead-free) only for 128Mb GDDR : FBGA (Lead-free) : 144FBGA (Lead-free) only for 128Mb GDDR : TSOPII (Lead-free & Halogen-free) : FBGA (Lead-free & Halogen-free) : FBGA(Lead-free & Halogen-free) for 64Mb DDR, 128Mb GDDR : FBGA DDP (Lead-free & Halogen-free) : FBGA FLIP-CHIP (Lead-free & Halogen-free) 5. Organization 04 : x4 08 : x8 16 : x16 32 : x32 31 : x32 (2CS) V L H F M B 10. Temperature & Power 6. Bank 2 3 4 : 2 Banks : 4 Banks : 8 Banks C L I P D Q : Commercial Temp. & Normal Power : Commercial Temp. & Low Power : Industrial Temp. & Normal Power : Industrial Temp. & Low Power : Industrial Temp. & Super Low Power : Commercial Temp. DDR3+ (Gapless, BL4) -2- Product Guide 1 2 3 4 5 6 7 8 9 Apr. 2010 Consumer Memory 10 11 K4 XXXXXXXX-XXXX SAMSUNG Memory DRAM Product Density & Refresh Organization Speed Temperature & Power Package Type Revision Interface (VDD, VDDQ) Bank 11. Speed 75 : 7.5ns, PC133 (133MHz CL=3) 60 : 6.0ns (166MHz CL=3) 50 : 5.0ns (200MHz CL=3) 40 : 4.0ns (250MHz CL=3) B0 : DDR266 (133MHz @ CL=2.5, tRCD=3, tRP=3) B3 : DDR333 (166MHz @ CL=2.5, tRCD=3, tRP=3) CC : DDR400 (200MHz @ CL=3, tRCD=3, tRP=3) E6 : DDR2-667 (333MHz @ CL=5, tRCD=5, tRP=5) E7 : DDR2-800 (400MHz @ CL=5, tRCD=5, tRP=5) F7 : DDR2/3-800 (400MHz @ CL=6, tRCD=6, tRP=6) F8 : DDR2/3-1066 (533MHz @ CL=7, tRCD=7, tRP=7) H9 : DDR3-1333 (667MHz @ CL=9, tRCD=9, tRP=9) K0 : DDR3-1600 (800MHz @ CL=11, tRCD=11, tRP=11) 7A : GDDR3-2.6Gbps (0.77ns) 08 : GDDR3-2.4Gbps (0.8ns) 1A : GDDR3-2.0Gbps (1.0ns) 12 : GDDR3-1.6Gbps (1.25ns) 14 : GDDR3-1.4Gbps (1.4ns) -3- Product Guide 2.1 SDRAM Density 64Mb N-die Bank 4Banks Part Number K4S640832N K4S641632N K4S280832K K4S281632K K4S280832O K4S281632O K4S560432J 256Mb J-die 4Banks K4S560832J K4S561632J K4S560432N 256Mb N-die 4Banks K4S560832N K4S561632N Package & Power, Temp. (-C/-L) & Speed LC(L)75 LC(L)50/C(L)60/C(L)75 U*1C(L)75 UC(L)50/C(L)60/C(L)75 LC(L)75 LC(L)50/C(L)60/C(L)75 U*1C(L)75 UC(L)75 UC(L)60/C(L)75 LC(L)75 LC(L)75 LC(L)60/C(L)75 Org. 8M x 8 4M x 16 16M x 8 8M x 16 16M x 8 8M x 16 64M x 4 32M x 8 16M x 16 64M x 4 32M x 8 16M x 16 LVTTL 8K/64ms LVTTL 8K/64ms Interface LVTTL Refresh 4K/64ms Apr. 2010 Consumer Memory 2. Commercial Temperature Consumer DRAM Component Product Guide Power (V) 3.3±0.3V Package 54pin TSOP(II) Avail. Now 128Mb K-die 4Banks LVTTL 4K/64ms 3.3±0.3V 54pin TSOP(II)*1 Now 128Mb O-die 4Banks LVTTL 4K/64ms 3.3±0.3V 54pin TSOP(II) 3Q’10 3.3±0.3V 54pin TSOP(II)*1 Now 3.3±0.3V 54pin TSOP(II) Now NOTE : 1. 128Mb K-die SDR and 256Mb J-die SDR DRAMs support Lead-free & Halogen-free package with Lead-free package code(-U) 2.2 DDR SDRAM Density 64Mb N-die 64Mb Q-die 128Mb L-die 128Mb O-die Bank 4Banks 4Banks 4Banks 4Banks Part Number K4H641638N K4H641638Q K4H281638L K4H281638O K4H560438J 256Mb J-die 4Banks K4H560838J K4H561638J K4H560438N 256Mb N-die 4Banks K4H560838N K4H561638N K4H510438F 512Mb F-die 4Banks K4H510838F K4H511638F K4H510438G 512Mb G-die 4Banks K4H510838G K4H511638G NOTE : 1. VDD/VDDQ SPEC for 128Mb DDR L-die DDR500 VDD/VDDQ 2.5V ± 0.125V DDR400 2.5V ± 0.2V Package & Power, Temp. (-C/-L) & Speed LC(L)CC FC(L)CC LC(L)CC LC(L)/C(L)CC LC(L)CC/C(L)B3 LC(L)B3/C(L)B0 LC(L)CC/C(L)B3 LC(L)CC/C(L)B3 LC(L)B3/C(L)B0 LC(L)CC/C(L)B3 LC(L)CC/C(L)B3 LC(L)B3/C(L)B0 HC(L)CC/C(L)B3 LC(L)CC/C(L)B3 HC(L)CC/C(L)B3 LC(L)CC/C(L)B3 HC(L)CC/C(L)B3 LC(L)B3/C(L)B0 HC(L)CC/C(L)B3 LC(L)CC/C(L)B3 HC(L)CC/C(L)B3 LC(L)CC/C(L)B3 HC(L)CC/C(L)B3 Org. 4M x 16 4M x 16 8M x 16 8M x 16 64M x 4 32M x 8 16M x 16 64M x 4 32M x 8 16M x 16 128M x 4 64M x 8 32M x 16 128M x 4 64M x 8 32M x 16 Interface SSTL_2 SSTL_2 SSTL_2 SSTL_2 Refresh 4K/64m 4K/64m 4K/64m 4K/64m Power (V) 2.5±0.2V 2.5±0.2V 2.5±0.2V*1 2.5±0.2V*1 2.5±0.2V*2 Package 66pinTSOPII 60ball FBGA 66pinTSOPII 66pinTSOPII 66pinTSOPII Avail. Now 2Q’10 Now 2Q’10 SSTL_2 8K/64m 66pinTSOPII Now SSTL_2 8K/64m 2.5±0.2V*2 66pinTSOPII 66pinTSOPII 60ball FBGA 66pinTSOPII 60ball FBGA 66pinTSOPII 60ball FBGA 66pinTSOPII 60ball FBGA 66pinTSOPII 60ball FBGA 66pinTSOPII 60ball FBGA Now SSTL_2 8K/64m 2.5±0.2V*2 Now SSTL_2 8K/64m 2.5±0.2V*2 Now 2. VDD/VDDQ SPEC for 256/512Mb DDR DDR400 VDD/VDDQ 2.6V ± 0.1V DDR333/266 2.5V ± 0.2V -4- Product Guide 2.3 DDR2 SDRAM Density 128Mb O-die 256Mb I-die 256Mb N-die 512Mb G-die Banks 4Banks 4Banks 4Banks 4Banks Part Number K4T28163QO K4T56163QI K4T56163QN K4T51083QG K4T51163QG K4T51043QI 512Mb I-die 4Banks K4T51083QI K4T51163QI 1Gb E-die 8Banks 8Banks K4T1G084QE K4T1G164QE K4T1G084QF K4T1G164QF Package & Power, Temp. (-C/-L) & Speed HCF8/E7/F7/E6 Z*1C(L)E7/F7/E6/D5/CC HCF8/E7/F7/E6 HC(L)F8/E7/F7/E6 HC(L)F8/E7/F7/E6 HC(L)E7/F7/E6 HC(L)E7/F7/E6 HC(L)F8/E7/F7/E6 HC(L)F8/E7/F7/E6 HC(L)F8/E7/F7/E6 BC(L)F8/E7/F7/E6 BC(L)F8/E7/F7/E6 Org. 8M x 16 16M x 16 16M x 16 64M x 8 32M x 16 128M x 4 64M x 8 32M x 16 128M x 8 64M x 16 128M x 8 64M x 16 SSTL_18 SSTL_18 8K/64m 8K/64m SSTL_18 8K/64m Interface SSTL_18 SSTL_18 SSTL_18 SSTL_18 Refresh 4K/64m 8K/64m 8K/64m 8K/64m Apr. 2010 Consumer Memory Power (V) 1.8V±0.1V 1.8V±0.1V 1.8V±0.1V 1.8V±0.1V Package 84ball FBGA 84ball FBGA 84ball FBGA 60ball FBGA 84ball FBGA 60ball FBGA 84ball FBGA Avail. Now Now Now Now Now Now Now Now 1.8V±0.1V 1.8V±0.1V 1.8V±0.1V 60ball FBGA 84ball FBGA 60ball FBGA 84ball FBGA 1Gb F-die NOTE : 1. 128Mb I-die DDR2 84ball FBGA supports Halogen-free package 2.4 DDR3 SDRAM Density 1Gb E-die 2Gb B-die Banks 8Banks 8Banks Part Number K4B1G0846E K4B1G1646E K4B2G0846B K4B2G1646B K4B2G0846C K4B2G1646C Package & Power, Temp. (-C/-L) & Speed HC(L)F7/F8/H9/K0 HC(L)F7/F8/H9/K0 HC(L)F7/F8/H9/K0 HC(L)F7/F8/H9/K0 HC(L)F8/H9/K0 HC(L)F8/H9/K0 Org. 128M x 8 64M x 16 256M x 8 128M x 16 256M x 8 128M x 16 Interface SSTL_15 SSTL_15 Refresh 8K/64m 8K/64m Power (V) 1.5V±0.075V 1.5V±0.075V PKG 78ball FBGA 96ball FBGA 78ball FBGA 96ball FBGA 78ball FBGA 96ball FBGA Avail. Now Now 2Gb C-die 8Banks SSTL_15 8K/64m 1.5V±0.075V Now 2.5 DDR3+ SDRAM Density 1Gb E-die 2Gb C-die Banks 8Banks 8Banks Part Number K4B1G1646E K4B2G1646C Package & Power, Temp. (-C/-L) & Speed HQH9 HQH9 Org. 64M x 16 128M x 16 Interface SSTL_15 SSTL_15 Refresh 8K/64m 8K/64m Power (V) 1.5V±0.075V 1.5V±0.075V PKG 96ball FBGA 96ball FBGA Avail. Now Now NOTE : For more details about product specifications or technical files, please contact us "semiconductor@samsung.com" -5- Product Guide 2.6 GDDR SDRAM Density Banks Part Number Package & Power, Temp. (-C/-L) & Speed FC40/50 Org. Interface Refresh Apr. 2010 Consumer Memory Power (V) PKG Lead-free & Halogenfree 144ball FBGA Avail. 128Mb K-die 4Banks K4D263238K VC40/50 4M x 32 SSTL_2 4K/32m 2.5V±5% Lead-free 144ball FBGA Lead-free & Halogenfree 100pin TQFP*1 3Q. ’10 EOL U*1C40/50 NOTE : 1. 128Mb K-die GDDR TQFP supports Lead-free & Halogen-free package with Lead-free package code(-U) 2.7 GDDR3 SDRAM Density 1Gb E-die Banks 8Banks Part Number K4J10324KE Package & Power, Temp. (-C/-L) & Speed HC7A/08/1A/12/14 Org. 32M x 32 Interface SSTL_2 Refresh 8K/32m Power (V) 1.8V±0.1V PKG 136ball FBGA Avail. Now -6- Product Guide 3.1 SDRAM Density 64Mb N-die 128Mb K-die 128Mb O-die 256Mb J-die 256Mb N-die Bank 4Banks 4Banks 4Banks 4Banks 4Banks Part Number KS641632N K4S281632K K4S281632O K4S561632J K4S561632N Package & Power, Temp. & Speed LI(P)60/I(P)75 U*1I(P)60/I(P)75 LI(P)60/I(P)75 U*1I(P)60/I(P)75 LI(P)60/I(P)75 Org. 4M x 16 8M x 16 8M x 16 16M x 16 16M x 16 Interface LVTTL LVTTL LVTTL LVTTL LVTTL Refresh 4K/64ms 4K/64ms 4K/64ms 8K/64ms 8K/64ms Apr. 2010 Consumer Memory 3. Industrial Temperature Consumer DRAM Component Product Guide Power (V) 3.3±0.3V 3.3±0.3V 3.3±0.3V 3.3±0.3V 3.3±0.3V Package 54pin TSOP(II) 54pin TSOP(II)*1 Avail. Now Now 3Q ’10 Now 2Q ’10 54pin TSOP(II) 54pin TSOP(II)*1 54pin TSOP(II) NOTE : 1. 128Mb K-die SDR and 256Mb J-die SDR DRAMs support Lead-free & Halogen-free package with Lead-free package code(-U) 3.2 DDR SDRAM Density Bank Part Number K4H510838F 512Mb F-die 4Banks K4H511638F K4H511638G Package & Power, Temp. & Speed LI(P)B3 LI(P)B3 HI(P)B3 LI(P)CC/B3 HI(P)CC/B3 Org. 64M x 8 32M x 16 32M x 16 SSTL_2 8K/64m 2.5±0.2V*1 Interface Refresh Power (V) Package 66pinTSOPII 66pinTSOPII 60ball FBGA SSTL_2 8K/64m 2.5±0.2V*1 66pinTSOPII 60ball FBGA Now Now Avail. 512Mb G-die 4Banks NOTE : 1. VDD/VDDQ SPEC for 256/512Mb DDR DDR400 VDD/VDDQ 2.6V ± 0.1V DDR333/266 2.5V ± 0.2V 3.3 DDR2 SDRAM Density Bank Part Number K4T51163QG K4T51163QG 512Mb I-die 1Gb E-die 1Gb F-die 4Banks 8Banks 8Banks K4T51163QI K4T51163QI K4T1G084QE K4T1G164QE K4T1G084QF K4T1G164QF Package & Power, Temp. & Speed HI(P)F7/I(P)E6/I(P)D5/ I(P)CC HDE6 HI(P)E7/I(P)F7/I(P)E6 HDE7/E6 HI(P)F7/I(P)E6 HI(P)F7/I(P)E6 BI(P)F7/I(P)E6 BI(P)F7/I(P)E6 32M x 16 128M x 8 64M x 16 128M x 8 64M x 16 SSTL_18 SSTL_18 SSTL_18 8K/64m 8K/64m 8K/64m 1.8V±0.1V 1.8V ± 0.1V 1.8V ± 0.1V 84ball FBGA 60ball FBGA 84ball FBGA 60ball FBGA 84ball FBGA Now Now Now 2Q ’10 Org. Interface Refresh Power (V) Package Avail. 512Mb G-die 4Banks 32M x 16 SSTL_18 8K/64m 1.8V±0.1V 84ball FBGA Now 3.4 DDR3 SDRAM Density 1Gb E-die 2Gb B-die 2Gb C-die Bank 8Banks 8Banks 8Banks Part Number K4B1G1646E K4B2G1646B K4B2G1646C Package & Power, Temp. & Speed HI(P)H9 HI(P)H9 HI(P)H9 Org. 64M x 16 128M x 16 128M x 16 Interface SSTL_15 SSTL_15 SSTL_15 Refresh 8K/64m 8K/64m 8K/64m Power (V) 1.5V±0.075V 1.5V±0.075V 1.5V±0.075V Package 96ball FBGA 96ball FBGA 96ball FBGA Avail. Now Now 2Q ’10 -7- Product Guide 4. Package Dimension 54Pin TSOP(II) (for SDRAM) (0.80) Apr. 2010 Consumer Memory Units : Millimeters #54 #28 (0.50) (10°) (10°) 0.125 - 0.035 +0.075 10.16 ± 0.10 (1.50) (0.80) 0.665 ± 0.05 0.210 ± 0.05 1.00 ± 0.10 22.22 ± 0.10 (R 0.1 5) (10°) 1.20 MAX (0.50) #1 (1.50) #27 11.76 ± 0.20 (10.76) 0.05 MIN 0. 15 ) (0.71) 0.80TYP [0.80 ± 0.08] 0.35 - 0.05 +0.10 (R 0.075 MAX (R (R 0. 25 ) 0. 25 ) NOTE 1. ( ) IS REFERENCE 2. [ ] IS ASS’Y OUT QUALITY 66Pin TSOP(II) (for DDR) #66 #34 (0.80) (0.50) 10.16 ± 0.10 (1.50) (0.80) 0.665 ± 0.05 0.210 ± 0.05 1.00 ± 0.10 22.22 ± 0.10 (R 0.1 5) 0.125 - 0.035 1.20 MAX +0.075 (10°) (0.50) #1 (1.50) #33 (10°) (10°) 11.76 ± 0.20 (10.76) 0. 15 ) (0.71) 0.65TYP [0.65 ± 0.08] (R 0.075 MAX 0. 25 ) (R (R 0. 25 ) Detail A Detail B NOTE 1. ( ) IS REFERENCE 2. [ ] IS ASS’Y OUT QUALITY Detail A 0.25 ± 0.08 Detail B (0° ∼ 8°) 0.30 ± 0.08 -8- [ (10°) 0.05 MIN [ (4°) 0.10 MAX 0.45 ~ 0.75 0.25TYP [ (10°) [ (4°) 0.10 MAX (0° ∼ 8°) Units : Millimeters 0.45 ~ 0.75 0.25TYP Product Guide 60Ball FBGA (For DDR 64Mb N-die) 0.10 Max Apr. 2010 Consumer Memory Units : Millimeters 8.00 ± 0.10 0.80 x 8 = 6.40 0.80 9 (Datum A) A (Datum B) B C D 1.00 x 11 = 11.00 A A #A1 MARK #A1 8.0 0 ± 0.10 1.60 7 6 5 4 3 2 1 8 B 12.00 ± 0.10 F 0.50 G H J 1.00 K L M 0.32 ± 0.05 TOP VIEW 1.10 ± 0.10 60 - ∅ 0.45 SOLDER BALL (Post Reflow 0.50 ± 0.05) ∅0.20 M AB BOTTOM VIEW 60Ball FBGA (For DDR 512Mb F-die, 512Mb G-die) 9.00 ± 0.10 0.80 x8 = 6.40 0.80 x4 = 3.20 0.80 x2= 1.60 9 8 7 6 5 0.80 x2 = 1.60 4 3 2 1 Units : Millimeters 9.00 ± 0.10 1.00MAX WINDOW MOLD AREA #A1 MARK(option) 12.00 ± 0.10 E B 0.80 A B 5.50 1.00 x11= 11.00 (Datum B) 1.00 0.50 #A1 C D E 12.00 ± 0.10 F G 0.50 H J 0.45 ± 0.05 K L M 60-∅0.45 ± 0.05 1.20 MAX 0.20 M A B 4-CORNER MARK(option) (0.90) (1.80) (0.90) (Datum A) TOP VIEW BOTTOM VIEW -9- 12.00 ± 0.10 Product Guide 60Ball FBGA (For DDR2 x8) 0.10MAX Apr. 2010 Consumer Memory Units : Millimeters # A1 INDEX MARK 7.50 ± 0.10 #A1 MOLDING AREA 7.50 ± 0.10 0.80 x 8 = 6.40 0.80 1.60 A B (Datum A) 9 (Datum B) A B C D 8 7 6 5 4 3 2 1 0.80 x 10 = 8.00 0.80 x 14 = 11.20 9.50 ± 0.10 E F 0.50 ± 0.05 H J K L 0.35±0.05 1.10±0.10 (0.95) 60-∅0.45 Solder ball (Post reflow 0.50 ± 0.05) 0.2 M A B (1.90) TOP VIEW BOTTOM VIEW 84Ball FBGA (For DDR2 128Mb O-die/256Mb N-die/512Mb G-die, I-die/1Gb E-die) 0.10MAX 7.50 ± 0.10 0.80 x 8 = 6.40 MOLDING AREA #A1 9 (Datum A) A B 0.80 G Units : Millimeters A # A1 INDEX MARK B 3 2 1 7.50 ± 0.10 3.20 0.80 8 7 6 5 1.60 4 (Datum B) C D E 12.50 ± 0.10 F G H 0.50±0.05 J K L M N P R 0.80 0.35±0.05 1.10±0.10 (0.95) (1.90) 84-∅0.45 Solder ball (Post reflow 0.50 ± 0.05) 0.2 M A B TOP VIEW BOTTOM VIEW - 10 - 5.60 12.50 ± 0.10 9.50 ± 0.10 Product Guide 60Ball FBGA (for DDR2 1Gb F-die x8) 0.10MAX Apr. 2010 Consumer Memory Units : Millimeters 7.50 ± 0.10 0.80 x 8 = 6. 40 (Datum A) A # A1 INDEX MARK B 3 2 1 7.50 ± 0.10 #A1 3.20 0.80 9 A B C D E F H J K L 0.80 G 8 7 6 5 1.60 4 (Datum B) 0.80 0.80 x 10 = 8.00 0.80 x 14 = 11.20 9.50 ± 0.10 0.37±0.05 1.10±0.10 60-∅0.48 Solder ball (Post reflow 0.50 ± 0.05) 0.2 M A B (0.30) MOLDING AREA (0.60) TOP VIEW BOTTOM VIEW 84Ball FBGA (for DDR2 1Gb F-die x16) 0.10MAX 7.50 ± 0.10 0.80 x 8 = 6. 40 3.20 0.80 (Datum A) 4.00 Units : Millimeters A # A1 INDEX MARK B 3 2 1 7.50 ± 0.10 #A1 9 A B C (Datum B) 1.60 6 5 4 8 7 E 12.50 ± 0.10 F G H K L M N P R 0.37±0.05 1.10±0.10 84-∅0.48 Solder ball (Post reflow 0.50 ± 0.05) 0.2 M A B 0.80 D 0.80 J (0.30) MOLDING AREA (0.60) TOP VIEW BOTTOM VIEW - 11 - 5.60 12.50 ± 0.10 9.50 ± 0.10 Product Guide 84Ball FBGA (For DDR2 256Mb I-die) 0.10MAX Apr. 2010 Consumer Memory Units : Millimeters 9.00 ± 0.10 0.80 x 8 = 6.40 3.20 0.80 1.60 6 5 4 3 2 1 # A1 INDEX MARK A 9.00 ± 0.10 #A1 B (Datum A) A B 9 8 7 D E 0.80 x 14 = 11.20 5.60 F 13.00 ± 0.10 G H 0.80 J K L M N P R 0.80 (Datum B) C 0.35 ± 0.05 1.10 ± 0.10 (0.95) 84-∅0.45 Solder ball (Post reflow 0.50 ± 0.05) 0.2 M A B (1.90) MOLDING AREA TOP VIEW BOTTOM VIEW 78Ball FBGA (for DDR3 1Gb x8 E-die / DDR3 2Gb x8 C-die) 0.10MAX 7.50 ± 0.10 A 3.20 Units : Millimeters #A1 7.50 ± 0.10 (Datum A) 0.80 1.60 #A1 INDEX MARK B 987654321 A B C D E F G H J K L M N (0.95) MOLDING AREA (1.90) 4.80 (Datum B) 11.00 ± 0.10 0.80 x 12 = 9.60 0.80 13.00 ± 0.10 0.35 ± 0.05 1.10 ± 0.10 78 - ∅0.45 Solder ball (Post Reflow ∅0.50 ± 0.05) 0.2 M A B TOP VIEW BOTTOM VIEW - 12 - 0.80 11.00 ± 0.10 Product Guide 0.10MAX Apr. 2010 Consumer Memory Units : Millimeters 96Ball FBGA (for DDR3 1Gb x16 E-die / DDR3+ 1Gb x16 E-die / DDR3 2Gb x16 C-die) 7.50 ± 0.10 A #A1 7.50 ± 0.10 0.80 #A1 INDEX MARK 1.60 3.20 B 987654321 (Datum A) A B C D E F G H J K L M N P R T (0.95) MOLDING AREA (1.90) (Datum B) 13.30 ± 0.10 6.00 0.80 x 15 = 12.00 A #A1 INDEX MARK B 4.80 0.80 x 12 = 9.60 0.40 0.35 ± 0.05 1.10 ± 0.10 96 - ∅0.45 Solder ball (Post Reflow ∅0.50 ± 0.05) 0.2 M A B TOP VIEW BOTTOM VIEW 78Ball FBGA (for DDR3 2Gb x8 B-die) 0.10MAX 9.00 ± 0.10 0.80 x 8 = 6.40 (Datum A) 0.80 1.60 3.20 0.80 Units : Millimeters #A1 9.00 ± 0.10 987654321 A B C D E F G H J K L M N (0.95) MOLDING AREA (1.90) (Datum B) 11.50 ± 0.10 0.80 0.35 ± 0.05 1.10 ± 0.10 78 - ∅0.45 Solder ball (Post Reflow ∅0.50 ± 0.05) 0.2 M A B TOP VIEW BOTTOM VIEW - 13 - 0.80 11.50 ± 0.10 13.30 ± 0.10 Product Guide 96Ball FBGA (for DDR3 2Gb x16 B-die) 0.10MAX Apr. 2010 Consumer Memory Units : Millimeters 9.00 ± 0.10 0.80 x 8 = 6.40 0.80 1.60 3.20 B A #A1 INDEX MARK #A1 9.00 ± 0.10 987654321 (Datum A) A B C D E F G H J K L M N P R T (0.95) MOLDING AREA (1.90) (Datum B) 13.30 ± 0.10 6.00 0.80 x 15 = 12.00 A 4.40 # A1 INDEX MARK 0.80 x 16 = 12.80 6.40 0.40 0.35 ± 0.05 1.10 ± 0.10 96 - ∅0.45 Solder ball (Post Reflow ∅0.50 ± 0.05) 0.2 M A B TOP VIEW BOTTOM VIEW 136Ball FBGA (for GDDR3 1Gb E-die) 0.10MAX 0.80 Units : Millimeters 10.00 ± 0.10 0.80 x 11 = 8.80 #A1 10.00 ± 0.10 0.80 12 11 10 9 8 7 6 2.00 5 4 3 2 1 (Datum A) A B C D 0.80 (Datum B) E F G 14.00 ± 0.10 H J K M N P R T V 0.35 ± 0.05 1.10 ± 0.10 136-∅0.45 Solder ball (Post reflow 0.50 ± 0.05) 0.95 1.90 MOLDING AREA 0.80 L TOP VIEW 0.2 M A B BOTTOM VIEW - 14 - 14.00 ± 0.10 13.30 ± 0.10 B Product Guide For further information, semiconductor@samsung.com Apr. 2010 Consumer Memory - 15 -