K4G10325FE

Apr. 2010 Graphic Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. For updates or additional information about Samsung products, contact your nearest Samsung office. All brand names, trademarks and registered trademarks belong to their respective owners. ⓒ 2010 Samsung Electronics Co., Ltd. All rights reserved. -1- Product Guide 1. GRAPHIC MEMORY ORDERING INFORMATION 1 2 3 4 5 6 7 8 9 10 11 12 Apr. 2010 Graphic Memory 13 14 K 4 X XX XX X X X - X X XX SAMSUNG Memory DRAM Product Density & Refresh Organization Speed Temperature & Power Package Type Revision Interface (VDD, VDDQ) Bank 1. SAMSUNG Memory 2. DRAM 3. Product N: W: J: G: gDDR2 SDRAM gDDR3 SDRAM GDDR3 SGRAM GDDR5 SGRAM 10. Revision M: B: D: F: H: Q: 1st Gen. 3rd Gen. 5th Gen. 7th Gen. 9th Gen. 17th Gen. A C E G I Z : 2nd Gen. : 4th Gen. : 6th Gen. : 8th Gen. : 10th Gen. : 26th Gen. 11. Package Type gDDR2 H : 84FBGA(Halogen Free & Lead Free) B : 84FBGA(Halogen Free & Lead Free & Flip Chip) gDDR3 E : 100FBGA(Halogen Free & Lead Free) H : 96FBGA(Halogen Free & Lead Free) GDDR3 B : 136FBGA(Lead Free) H : 136FBGA(Halogen Free & Lead Free) GDDR5 H : 170FBGA(Halogen Free & Lead Free) 12. Temperature & Power(VDD) C : Commercial Normal J : Commercial High L : Commercial Low 13~14. Speed 1A1) 112) 12 14 15 16 18 19 20 22 25 : : : : : : : : : : : 0.935ns (2.1Gbps) 1.07ns (1.8Gbps) 1.25ns (1.6Gbps) 1.4ns (1.4Gbps) 1.5ns (1.3Gbps) 1.6ns (1.2Gbps) 1.8ns (1.1Gbps) 1.875ns (1.06Gbps) 2.0ns (1.0Gbps) 2.2ns (0.9Gbps) 2.5ns (0.8Gbps) 28 03 04 05 5C 06 6A 07 7A 08 09 : : : : : : : : : : : 0.28ns 0.33ns 0.40ns 0.50ns 0.56ns 0.62ns 0.66ns 0.71ns 0.77ns 0.8ns 0.9ns (7.0Gbps) (6.0Gbps) (5.0Gbps) (4.0Gbps) (3.6Gbps) (3.2Gbps) (3.0Gbps) (2.8Gbps) (2.6Gbps) (2.4Gbps) (2.2Gbps) 4~5. Density & Refresh 51 52 10 1G 2G 4G : 512M, 8K/64ms : 512M, 8K/32ms : 1G, 8K/32ms : 1G, 8K/64ms : 2G, 8K/64ms : 4G, 8K/64ms 6~7. Organization 16 : x16 32 : x32 8. Bank 3 : 4Banks 4 : 8Banks 9. Interface ( VDD, VDDQ) Q 5 6 F K : : : : : SSTL_2 (1.8V, 1.8V) SSTL_2 (1.8V,1.8V,LP) SSTL_15 (1.5V,1.5V) POD_15 (1.5V,1.5V) POD_18 (1.8V,1.8V) NOTE : 1)Graphic high speed binning was unified to EDP binning(2000Mbps→2133Mbps) 2)Graphic high speed binning was unified to EDP binning(1800Mbps→1866Mbps) -2- Product Guide 2. GRAPHIC MEMORY COMPONENT PRODUCT GUIDES Product Density 512Mb G-die 4Banks 512Mb Z-die gDDR2 SDRAM 1Gb E-die 8Banks 1Gb F-die K4N1G164QF BC20/25 HC1A/11 12/15 HC12/15 HC1A/11 12/15 HC7A/08 1A/12/14 HC7A/08 1A/12/14 HC04/05 5C TBD K4N51163QZ K4N1G164QE HC20/25 HC20/25 64Mx16 SSTL_18 8K/64ms 1.8V ± 0.1V Banks Part Num. K4N51163QG PKG & Speed HC20/25 32Mx16 Org. Interf. Ref. Voltage(V) Apr. 2010 Graphic Memory PKG. PKG Type Status 84ball FBGA Halogen-Free & Lead-Free Mass Production Halogen-Free, Lead-Free & Flip-Chip CS May. ’10 1Gb E-die gDDR3 SDRAM 2Gb B-die 2Gb C-die 512Mb I-die GDDR3 SGRAM 1Gb E-die 8Banks K4W1G1646E 8Banks K4W2G1646B K4W2G1646C K4J52324KI K4J10324KE 64Mx16 128Mx16 SSTL_15 8K/64ms 1.5V ± 0.075V 128Mx16 16Mx32 32Mx32 1.8V ± 0.1V 8K/32ms 1.8V ± 0.1V 170ball FBGA 170ball FBGA Halogen-Free & Lead-Free Halogen-Free & Lead-Free 136ball FBGA Halogen-Free & Lead-Free 96ball FBGA Halogen-Free & Lead-Free Mass Production CS May. ’10 Pseudo Open_ Drain Mass Production Mass Production Mass Production CS May. ’10 1Gb E-die GDDR5 SGRAM 8Banks K4G10325FE 32Mx32 POD_15 8K/32ms 1.5V ± 0.045V 2Gb C-die 16Banks K4G20325FC 64Mx32 POD_15 16K/32ms 1.5V ± 0.045V -3-