KM68V257EL

KM68V257E/EL, KM68V257EI/ELI Document Title 32Kx8 Bit High-Speed CMOS Static RAM (3.3V Operating) Operated at Commercial and Industrial Temperature Range. CMOS SRAM Revision History Rev. No. Rev. 0.0 Rev. 1.0 History Initial Draft Release to Final Data Sheet 1. Delete Preliminary 2. Delete Data Retention 3. Relex Standby current Item Previous Isb1 0.3mA Draft Data Aug. 1. 1998 Sep. 7. 1998 Remark Preliminary Final Current 0.5mA 2mA Remark L-ver. Normal The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Revision 0.0 August 1998 KM68V257E/EL, KM68V257EI/ELI FEATURES • Fast Access Time 12,15,20ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 2.0mA(Max.) 0.5mA(Max.) L-ver. only Operating KM68V257E - 12 : 70mA(Max.) KM68V257E - 15 : 70mA(Max.) KM68V257E - 20 : 70mA(Max.) • Single 3.3 ±0.3V Power Supply • TTL Compatible Inputs and Outputs • Fully Static Operation - No Clock or Refresh required • Three State Outputs • Standard Pin Configuration KM68V257EJ : 28-SOJ-300 KM68V257ETG : 28-TSOP1-0813, 4F CMOS SRAM GENERAL DESCRIPTION The KM68V257E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The KM68V257E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The KM68V257E is packaged in a 300mil 28-pin plastic SOJ or TSOP1 forward. 32K x 8 Bit High-Speed CMOS Static RAM (3.3V Operating) PIN CONFIGURATION(Top View) OE A11 A9 A8 A13 WE Vcc A14 A12 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A10 CS I/O8 I/O7 I/O6 I/O5 I/O4 Vss I/O3 I/O2 I/O1 A0 A1 A2 ORDERING INFORMATION KM68V257E -12/15/20 KM68V257EI -12/15/20 Commercial Temp. Industrial Temp. TSOP1 FUNCTIONAL BLOCK DIAGRAM A14 1 28 Vcc 27 WE 26 A13 25 A8 24 A9 23 A11 Clk Gen. A0 A1 A2 A3 A4 A5 A6 A7 A8 Pre-Charge-Circuit A12 2 A7 3 A6 4 Row Select A5 5 Memory Array 512 Rows 64x8 Columns A4 6 A3 7 A2 8 A1 9 A0 10 SOJ 22 OE 21 A10 20 CS 19 I/O8 18 I/O7 17 I/O6 16 I/O5 15 I/O4 I/O1~I/O8 Data Cont. CLK Gen. A9 I/O Circuit Column Select I/O1 11 I/O2 12 I/O3 13 Vss 14 A10 A11 A12 A13 A14 PIN FUNCTION Pin Name Pin Function Address Inputs Write Enable Chip Select Output Enable Data Inputs/Outputs Power(+3.3V) Ground A0 - A14 WE CS OE I/O1 ~ I/O8 VCC VSS CS WE OE -2- Revision 0.0 August 1998 KM68V257E/EL, KM68V257EI/ELI ABSOLUTE MAXIMUM RATINGS* Parameter Voltage on Any Pin Relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Commercial Industrial Symbol VIN, VOUT VCC PD TSTG TA TA Rating -0.5 to 4.6 -0.5 to 4.6 1.0 -65 to 150 0 to 70 -40 to 85 CMOS SRAM Unit V V W °C °C °C * Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS(TA=0 to 70°C) Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min 3.0 0 2.0 -0.3* Typ 3.3 0 Max 3.6 0 VCC+0.3** 0.8 Unit V V V V NOTE: The above parameters are also guaranteed at industrial temperature range. * VIL(Min) = -2.0(Pulse Width ≤ 8ns) for I ≤ 20mA ** VIH(Max) = VCC+2.0V(Pulse Width ≤ 8ns) for I ≤ 20mA DC AND OPERATING CHARACTERISTICS(TA=0 to 70°C,VCC=3.3±0.3V, unless otherwise specified) Parameter Input Leakage Current Output Leakage Current Operating Current Symbol ILI ILO ICC Test Conditions VIN = VSS to VCC CS=VIH or OE=VIH or WE=VIL VOUT = VSS to VCC Min. Cycle, 100% Duty CS=VIL, VIN = VIH or VIL, IOUT=0mA 12ns 15ns 20ns Standby Current ISB ISB1 Min. Cycle, CS=VIH f=0MHz, CS≥VCC-0.2V, VIN≥VCC-0.2V or VIN≤0.2V IOL=8mA IOH=-4mA Normal L-ver 2.4 Min -2 -2 Max 2 2 70 70 70 20 2 0.5 0.4 V V mA mA Unit µA µA mA Output Low Voltage Level Output High Voltage Level VOL VOH NOTE: The above parameters are also guaranteed at industrial temperature range. CAPACITANCE*(TA=25°C, f=1.0MHz) Item Input/Output Capacitance Input Capacitance Symbol CI/O CIN Test Conditions VI/O=0V VIN=0V MIN Max 8 7 Unit pF pF * NOTE : Capacitance is sampled and not 100% tested. -3- Revision 0.0 August 1998 KM68V257E/EL, KM68V257EI/ELI AC CHARACTERISTICS(TA=0 to 70°C, VCC=3.3±0.3V, unless otherwise noted.) TEST CONDITIONS Parameter Input Pulse Levels Input Rise and Fall Times Input and Output timing Reference Levels Output Loads NOTE : The above test conditions are also applied at industrial temperature range. CMOS SRAM Value 0V to 3V 3ns 1.5V See below Output Loads(A) Output Loads(B) for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ +3.3V RL = 50Ω DOUT VL = 1.5V Z O = 50Ω 30pF* 319Ω DOUT 353Ω 5pF* * Capacitive Load consists of all components of the test environment. * Including Scope and Jig Capacitance READ CYCLE Parameter Read Cycle Time Address Access Time Chip Select to Output Output Enable to Valid Output Chip Enable to Low-Z Output Output Enable to Low-Z Output Chip Disable to High-Z Output Output Disable to High-Z Output Output Hold from Address Change Chip Selection to Power Up Time Chip Selection to Power DownTime Symbol tRC tAA tCO tOE tLZ tOLZ tHZ tOHZ tOH tPU tPD KM68V257E-12 Min 12 3 0 0 0 3 0 Max 12 12 6 6 6 12 KM68V257E-15 Min 15 3 0 0 0 3 0 Max 15 15 7 7 7 15 KM68V257E-20 Min 20 3 0 0 0 3 0 Max 20 20 8 8 8 20 Unit ns ns ns ns ns ns ns ns ns ns ns NOTE : The above parameters are also guaranteed at industrial temperature range. -4- Revision 0.0 August 1998 KM68V257E/EL, KM68V257EI/ELI WRITE CYCLE Parameter Write Cycle Time Chip Select to End of Write Address Setup Time Address Valid to End of Write Write Pulse Width(OE High) Write Pulse Width(OE Low) Write Recovery Time Write to Output High-Z Data to Write Time Overlap Data Hold from Write Time End Write to Output Low-Z Symbol tWC tCW tAS tAW tWP tWP1 tWR tWHZ tDW tDH tOW KM68V257E-12 Min 12 8 0 8 8 12 0 0 6 0 0 Max 6 KM68V257E-15 Min 15 9 0 9 9 15 0 0 7 0 0 Max 7 - CMOS SRAM KM68V257E-20 Min 20 10 0 10 10 20 0 0 8 0 0 Max 8 Unit ns ns ns ns ns ns ns ns ns ns ns NOTE : The above parameters are also guaranteed at industrial temperature range. TIMMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH) tRC Address tOH Data Out Previous Valid Data tAA Valid Data TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH) tRC Address tAA tCO tOE OE tOLZ Data out VCC Current ICC ISB tLZ(4,5) Valid Data tPU 50% tPD 50% tOH tOHZ tHZ(3,4,5) CS -5- Revision 0.0 August 1998 KM68V257E/EL, KM68V257EI/ELI NOTES(READ CYCLE) CMOS SRAM 1. WE is high for read cycle. 2. All read cycle timing is referenced from the last valid address to the first transition address. 3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or VOL levels. 4. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device. 5. Transition is measured ±200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested. 6. Device is continuously selected with CS=VIL. 7. Address valid prior to coincident with CS transition low. 8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle. TIMING WAVEFORM OF WRITE CYCLE(1) (OE= Clock) tWC Address tAW OE tCW(3) CS tAS(4) WE tDW Data in High-Z tOHZ(6) Data out High-Z(8) Valid Data tDH tWP(2) tWR(5) TIMING WAVEFORM OF WRITE CYCLE(2) (OE=Low Fixed) tWC Address tAW tCW(3) CS tAS(4) WE tDW Data in High-Z tWHZ(6) Data out High-Z(8) Valid Data tOW (10) (9) tWR(5) tWP1(2) tDH -6- Revision 0.0 August 1998 KM68V257E/EL, KM68V257EI/ELI TIMING WAVEFORM OF WRITE CYCLE(3) (CS = Controlled) tWC Address tAW tCW(3) CS tAS(4) WE tDW Data in tDH tWP(2) CMOS SRAM tWR(5) High-Z tLZ tWHZ(6) Valid Data High-Z Data out High-Z High-Z(8) NOTES(WRITE CYCLE) 1. All write cycle timing is referenced from the last valid address to the first transition address. 2. A write occurs during the overlap of a low CS and WE. A write begins at the latest transition CS going low and WE going low ; A write ends at the earliest transition CS going high or WE going high. tWP is measured from the beginning of write to the end of write. 3. tCW is measured from the later of CS going low to end of write. 4. tAS is measured from the address valid to the beginning of write. 5. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going high. 6. If OE, CS and WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase of the output must not be applied because bus contention can occur. 7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle. 8. If CS goes low simultaneously with WE going or after WE going low, the outputs remain high impedance state. 9. Dout is the read data of the new address. 10. When CS is low : I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be applied. FUNCTIONAL DESCRIPTION CS H L L L WE X H H L OE X* H L X Mode Not Select Output Disable Read Write I/O Pin High-Z High-Z DOUT DIN Supply Current ISB, ISB1 ICC ICC ICC * NOTE : X means Don′t Care. -7- Revision 0.0 August 1998 KM68V257E/EL, KM68V257EI/ELI PACKAGE DIMENSIONS 28-SOJ-300 #28 #15 CMOS SRAM Units:millimeters/Inches 7.62 0.300 8.51 ±0.12 0.335 ±0.005 6.86 ±0.25 0.270 ±0.010 0.20 #1 18.82 MAX 0.741 18.41 ±0.12 0.725 ±0.005 ( 1.30 ) 0.051 ( 1.30 ) 0.051 +0.10 -0.05 +0.10 -0.05 +0.10 -0.05 #14 0.69 MIN 0.027 0.008+0.004 -0.002 3.76 MAX 0.148 0.10 0.004MAX ( 0.95 ) 0.0375 0.43 0.004 0.017 +0.002 - 1.27 0.050 0.71 0.004 0.028+0.002 - 28-TSOP1-0813.4F Units:millimeters/Inches 0.10 MAX 0.004 MAX +0.10 -0.05 0.004 0.008 +0.002 - 0.20 13.40 ±0.20 0.528 ±0.008 #28 ( 0.425 ) 0.017 #1 8.40 0.331 MAX 0.55 0.0217 #14 #15 0.25 0.010 TYP 11.80 ±0.10 0.465 ±0.004 1.00 ±0.10 0.039 ±0.004 0.15 0.006 +0.10 -0.05 +0.004 -0.002 8.00 0.315 1.20 0.047 MAX 0.05 0.002 MIN 0~8° 0.45 ~0.75 0.018 ~0.030 0.50 ) 0.020 ( -8- Revision 0.0 August 1998