M383L6423ETS

256MB, 512MB, 1GB Registered DIMM DDR SDRAM DDR SDRAM Registered Module 184pin Registered Module based on 256Mb E-die (x4, x8) with 1,700 / 1,200mil Height & 72-bit ECC Revision 1.4 January, 2004 Revision 1.4 February, 2004 256MB, 512MB, 1GB Registered DIMM Revision History Revision 1.0 (April, 2003) - First release Revision 1.1 (July, 2003) - Delete speed B3 Revision 1.2 (August, 2003) - Corrected typo. Revision 1.3 (January, 2004) - Corrected typo in functional block diagram of 1GB DIMM Revision 1.4 (February, 2004) - Corrected functional block diagram of 1GB DIMM DDR SDRAM Revision 1.4 February, 2004 256MB, 512MB, 1GB Registered DIMM 184Pin Registered DIMM based on 256Mb E-die (x4, x8) Ordering Information Part Number M383L3223ETS-CAA/A2/B0/A0 M383L6423ETS-CAA/A2/B0/A0 M383L6420ETS-CAA/A2/B0/A0 M383L2828ET1-CAA/A2/B0/A0 M312L3223ETS-CAA/A2/B0/A0 M312L6423ETS-CAA/A2/B0/A0 M312L6420ETS-CAA/A2/B0/A0 M312L2828ET0-CAA/A2/B0/A0 Density 256MB 512MB 512MB 1GB 256MB 512MB 512MB 1GB Organization 32M x 72 64M x 72 64M x 72 128M x 72 32M x 72 64M x 72 64M x 72 128M x 72 DDR SDRAM Component Composition 32Mx8( K4H560838E) * 9EA 32Mx8( K4H560838E) * 18EA 64Mx4( K4H560438E) * 18EA st.128Mx4( K4H510638E) * 18EA 32Mx8( K4H560838E) * 9EA 32Mx8( K4H560838E) * 18EA 64Mx4( K4H560438E) * 18EA st.128Mx4( K4H510638E) * 18EA Height 1,700mil 1,700mil 1,700mil 1,700mil 1,200mil 1,200mil 1,200mil 1,200mil Operating Frequencies AA(DDR266@CL=2) Speed @CL2 Speed @CL2.5 CL-tRCD-tRP 133MHz 133MHz 2-2-2 A2(DDR266@CL=2) 133MHz 133MHz 2-3-3 B0(DDR266@CL=2.5) 100MHz 133MHz 2.5-3-3 A0(DDR200@CL=2) 100MHz 2-2-2 Feature • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • Programmable Read latency 2, 2.5 (clock) • Programmable Burst length (2, 4, 8) • Programmable Burst type (sequential & interleave) • Edge aligned data output, center aligned data input • Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh) • Serial presence detect with EEPROM • 1,700mil / 1,200mil height & double sided SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice. Revision 1.4 February, 2004 256MB, 512MB, 1GB Registered DIMM Pin Configuration (Front side/back side) Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 Front VREF DQ0 VSS DQ1 DQS0 DQ2 VDD DQ3 NC /RESET VSS DQ8 DQ9 DQS1 VDDQ *CK1 */CK1 VSS DQ10 DQ11 CKE0 VDDQ DQ16 DQ17 DQS2 VSS A9 DQ18 A7 VDDQ DQ19 Pin 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 Front A5 DQ24 VSS DQ25 DQS3 A4 VDD DQ26 DQ27 A2 VSS A1 CB0 CB1 VDD DQS8 A0 CB2 VSS CB3 BA1 Pin 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 Front VDDQ /WE DQ41 /CAS VSS DQS5 DQ42 DQ43 VDD */CS2 DQ48 DQ49 VSS *CK2 */CK2 VDDQ DQS6 DQ50 DQ51 VSS VDDID DQ56 DQ57 VDD DQS7 DQ58 DQ59 VSS NC SDA SCL Pin 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 Back VSS DQ4 DQ5 VDDQ DM0/DQS9 DQ6 DQ7 VSS NC NC NC VDDQ DQ12 DQ13 DM1/DQS10 VDD DQ14 DQ15 CKE1 VDDQ *BA2 DQ20 A12 VSS DQ21 A11 DM2/DQS11 VDD DQ22 A8 DQ23 Pin 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 Back VSS A6 DQ28 DQ29 VDDQ DM3/DQS12 A3 DQ30 VSS DQ31 CB4 CB5 VDDQ CK0 /CK0 VSS DM8/DQS17 A10 CB6 VDDQ CB7 DDR SDRAM Pin 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 169 170 171 172 173 174 175 176 177 178 179 180 181 182 183 184 Back /RAS DQ45 VDDQ /CS0 /CS1 DM5/DQS14 VSS DQ46 DQ47 */CS3 VDDQ DQ52 DQ53 *A13 VDD DM6/DQS15 DQ54 DQ55 VDDQ NC DQ60 DQ61 VSS DM7/DQS16 DQ62 DQ63 VDDQ SA0 SA1 SA2 VDDSPD KEY DQ32 VDDQ DQ33 DQS4 DQ34 VSS BA0 DQ35 DQ40 KEY VSS DQ36 DQ37 VDD DM4/DQS13 DQ38 DQ39 VSS DQ44 Note : 1. * : These pins are not used in this module. 2. Pins 111, 158 are NC for 1row module[M383(12)L3223ETS, M383(12)L6420ETS] & used for 2row module [M383(12)L6423ETS, M383(12)L2828ET1(0) ] 3. Pins 97, 107, 119, 129, 140, 149, 159, 169, 177 : DM (x8 base module) or DQS (x4 base module). Pin Description Pin Name A0 ~ A12 BA0 ~ BA1 DQ0 ~ DQ63 DQS0 ~ DQS17 CK0,CK0 ~ CK2, CK2 CKE0, CKE1(for double banks) CS0, CS1(for double banks) RAS CAS WE CB0 ~ CB7 Function Address input (Multiplexed) Bank Select Address Data input/output Data Strobe input/output Clock input Clock enable input Chip select input Row address strobe Column address strobe Write enable Check bit(Data-in/data-out) Pin Name DM0 ~ DM8 VDD VDDQ VSS VREF VDDSPD SDA SCL SA0 ~ 2 NC Data - in mask Power supply (2.5V) Power Supply for DQS(2.5V) Ground Power supply for reference Serial EEPROM Power/Supply ( 2.3V to 3.6V ) Serial data I/O Serial clock Address in EEPROM No connection Function Revision 1.4 February, 2004 256MB, 512MB, 1GB Registered DIMM DDR SDRAM 256MB, 32M x 72 ECC Module (M383(12)L3223ETS) (Populated as 1 bank of x8 DDR SDRAM Module) Functional Block Diagram RCS0 DQS0 DM0 DM/ CS DQS DQS4 DM4 DM/ CS DQS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DM1 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 D0 DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQS5 DM5 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 D4 DM/ CS DQS DM/ CS DQS DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DM2 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 D1 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQS6 DM6 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 D5 DM/ CS DQS DM/ CS DQS DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3 DM3 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 D2 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQS7 DM7 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 D6 DM/ CS DQS DM/ CS DQS DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 DQS8 DM8 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 D3 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 Serial PD D7 SCL WP A0 SA0 A1 SA1 A2 SA2 SDA DM/ CS DQS VDDSPD VDD/VDDQ SPD D0 - D8 D0 - D8 CB0 CB1 CB2 CB3 CB4 CB5 CB6 CB7 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 D8 VREF VSS D0 - D8 D0 - D8 PLL* CK0,CK0 * Wire per Clock Loading table/wiring Diagrams CS0 BA0-BA1 A0-A12 RAS CAS CKE0 WE PCK PCK R E G I S T E R RCS0 RBA0 - RBA1 RA0 - RA12 RRAS RCAS RCKE0 RWE RESET BA0 -BA1 : SDRAMs DQ0 - D8 A0 -A12 : SDRAMs D0 - D8 RAS : SDRAMs D0 - D8 CAS : SDRAMs D0 - D8 CKE : SDRAMs D0 - D8 WE: SDRAMs D0 - D8 Notes: 1. DQ-to-I/O wiring is shown as recommended but may be changed. 2. DQ/DQS/DM/CKE/CS relationships must be maintained as shown. 3. DQ, DQS, DM/DQS resistors: 22 Ohms. Revision 1.4 February, 2004 256MB, 512MB, 1GB Registered DIMM DDR SDRAM 512MB, 64M x 72 ECC Module (M383(12)L6423ETS) (Populated as 2 bank of x8 DDR SDRAM Module) Functional Block Diagram RCS1 RCS0 DQS0 DM0 DM/ CS DQS DM/ CS DQS DQS4 DM4 DM/ CS DQS DM/ CS DQS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DM1 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 D0 I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5 D9 DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQS5 DM5 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 D4 I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5 D13 DM/ CS DQS DM/ CS DQS DM/ CS DQS DM/ CS DQS DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DM2 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 D1 I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5 D10 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQS6 DM6 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 D5 I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5 D14 DM/ CS DQS DM/ CS DQS DM/ CS DQS DM/ CS DQS DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3 DM3 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 D2 I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5 D11 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQS7 DM7 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 D6 I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5 D15 DM/ CS DQS DM/ CS DQS DM/ CS DQS DM/ CS DQS DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 DQS8 DM8 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 D3 I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5 D12 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 D7 I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5 D16 DM/ CS DQS DM/ CS DQS CB0 CB1 CB2 CB3 CB4 CB5 CB6 CB7 I/O 7 I/O 6 I/O 1 I/O 0 I/O 5 I/O 4 I/O 3 I/O 2 D8 I/O 0 I/O 1 I/O 6 I/O 7 I/O 2 I/O 3 I/O 4 I/O 5 VDDSPD SPD D0 - D17 D0 - D17 D17 VDD/VDDQ VREF VSS D0 - D17 D0 - D17 Serial PD SCL WP A0 SA0 A1 SA1 A2 SA2 SDA PLL* CK0,CK0 * Wire per Clock Loading table/wiring Diagrams CS0 CS1 BA0-BA1 A0-A12 RAS CAS CKE0 CKE1 WE PCK PCK R E G I S T E R RCS0 RCS1 RBA0 - RBA1 RA0 - RA12 RRAS RCAS RCKE0 RCKE1 RWE RESET BA0 -BAn : SDRAMs DQ0 - D17 A0 -A12 : SDRAMs D0 - D17 RAS : SDRAMs D0 - D17 CAS : SDRAMs DQ0 - D17 CKE : SDRAMs D0 - D8 CKE : SDRAMs D9 - D17 WE: SDRAMs D0 - D17 Notes: 1. DQ-to-I/O wiring is shown as recommended but may be changed. 2. DQ/DQS/DM/CKE/CS relationships must be maintained as shown. 3. DQ, DQS, DM/DQS resistors: 22 Ohms. Revision 1.4 February, 2004 256MB, 512MB, 1GB Registered DIMM DDR SDRAM 512MB, 64M x 72 ECC Module (M383(12)L6420ETS) (Populated as 1 bank of x4 DDR SDRAM Module) Functional Block Diagram VSS RCS0 DQS0 DQ0 DQ1 DQ2 DQ3 DQS I/O 3 I/O 2 I/O 1 I/O 0 CS D0 DM DQS9 (DM0) DQ4 DQ5 DQ6 DQ7 DQS I/O 3 I/O 2 I/O 1 I/O 0 CS D9 DM DQS1 DQ8 DQ9 DQ10 DQ11 DQS I/O 3 I/O 2 I/O 1 I/O 0 CS D1 DM DQS10 (DM1) DQ12 DQ13 DQ14 DQ15 DQS I/O 3 I/O 2 I/O 1 I/O 0 CS D10 DM DQS2 DQ16 DQ17 DQ18 DQ19 DQS I/O 3 I/O 2 I/O 1 I/O 0 CS D2 DM DQS11 (DM2) DQ20 DQ21 DQ22 DQ23 DQS I/O 3 I/O 2 I/O 1 I/O 0 CS D11 DM DQS3 DQ24 DQ25 DQ26 DQ27 DQS I/O 3 I/O 2 I/O 1 I/O 0 CS D3 DM DQS12 (DM3) DQ28 DQ29 DQ30 DQ31 DQS I/O 3 I/O 2 I/O 1 I/O 0 CS D12 DM DQS4 DQ32 DQ33 DQ34 DQ35 DQS I/O 3 I/O 2 I/O 1 I/O 0 CS D4 DM DQS13 (DM4) DQ36 DQ37 DQ38 DQ39 DQS I/O 3 I/O 2 I/O 1 I/O 0 CS D13 DM DQS5 DQ40 DQ41 DQ42 DQ43 DQS I/O 3 I/O 2 I/O 1 I/O 0 CS D5 DM DQS14 (DM5) DQ44 DQ45 DQ46 DQ47 DQS I/O 3 I/O 2 I/O 1 I/O 0 CS D14 DM DQS6 DQ48 DQ49 DQ50 DQ51 DQS I/O 3 I/O 2 I/O 1 I/O 0 CS D6 DM DQS15 (DM6) DQ52 DQ53 DQ54 DQ55 DQS I/O 3 I/O 2 I/O 1 I/O 0 CS D15 DM Serial PD SCL WP A0 A1 SA1 A2 SA2 SDA DQS7 DQ56 DQ57 DQ58 DQ59 DQS I/O 3 I/O 2 I/O 1 I/O 0 CS D7 DM DQS16 (DM7) DQ60 DQ61 DQ62 DQ63 DQS I/O 3 I/O 2 I/O 1 I/O 0 CS D16 DM SA0 VDDSPD VDD/VDDQ SPD D0 - D17 D0 - D17 DQS8 CB0 CB1 CB2 CB3 DQS I/O 3 I/O 2 I/O 1 I/O 0 CS D8 DM DQS17 (DM8) CB4 CB5 CB6 CB7 DQS I/O 3 I/O 2 I/O 1 I/O 0 CS D17 DM VREF VSS D0 - D17 D0 - D17 Strap: see Note 4 CS0 BA0-BA1 A0-A12 RAS CAS CKE0 WE PCK PCK R E G I S T E R RCS0_1 RCS0_2 RBA0 - RBA1 RA0 - RA12 RRAS RCAS RCKE0A RCKE0B RWE RESET PLL* CK0,CK0 * Wire per Clock Loading table/wiring Diagrams BA0 -BA1 : SDRAMs DQ0 - D17 A0 -A12 : SDRAMs D0 - D17 RAS : SDRAMs D0 - D17 CAS : SDRAMs DQ0 - D17 CKE : SDRAMs D0 - D8 CKE : SDRAMs D9 - D17 WE: SDRAMs D0 - D17 Notes: 1. DQ-to-I/O wiring is shown as recommended but may be changed. 2. DQ/DQS/DM/CKE/S relationships must be maintained as shown. 3. DQ, DQS, DM resistors: 22 Ohms. Revision 1.4 February, 2004 256MB, 512MB, 1GB Registered DIMM DDR SDRAM 1GB, 128M x 72 ECC Module [M383(12)L2828ET1(0)] (Populated as 2 bank of x4 DDR SDRAM Module) Functional Block Diagram VSS RS1 RS0 DQS0 DQ0 DQ1 DQ2 DQ3 DQS I/O 3 I/O 2 I/O 1 I/O 0 S DM DQS I/O 3 I/O 2 I/O 1 I/O 0 S DM DQ4 DQ5 DQ6 DQ7 DM0/DQS9 DQS I/O 0 I/O 1 I/O 2 I/O 3 S DM DQS I/O 0 I/O 1 I/O 2 I/O 3 S DM D0 D18 D9 D27 DQS1 DQ8 DQ9 DQ10 DQ11 DQS I/O 3 I/O 2 I/O 1 I/O 0 S DM DQS I/O 3 I/O 2 I/O 1 I/O 0 S DM DM1/DQS10 DQ12 DQ13 DQ14 DQ15 DQS I/O 0 I/O 1 I/O 2 I/O 3 S DM DQS I/O 0 I/O 1 I/O 2 I/O 3 S DM D1 D19 D10 D28 DQS2 DQ16 DQ17 DQ18 DQ19 DQS I/O 3 I/O 2 I/O 1 I/O 0 S DM DQS I/O 3 I/O 2 I/O 1 I/O 0 S DM DM2/DQS11 DQ20 DQ21 DQ22 DQ23 DQS I/O 0 I/O 1 I/O 2 I/O 3 S DM DQS I/O 0 I/O 1 I/O 2 I/O 3 S DM D2 D20 D11 D29 DQS3 DQ24 DQ25 DQ26 DQ27 DQS I/O 3 I/O 2 I/O 1 I/O 0 S DM DM3/DQS12 DQS I/O 3 I/O 2 I/O 1 I/O 0 S DM DQ28 DQ29 DQ30 DQ31 DQS I/O 0 I/O 1 I/O 2 I/O 3 S DM DQS I/O 0 I/O 1 I/O 2 I/O 3 S DM D3 D21 D12 D30 DQS4 DQ32 DQ33 DQ34 DQ35 DQS I/O 3 I/O 2 I/O 1 I/O 0 S DM DM4/DQS13 DQS I/O 3 I/O 2 I/O 1 I/O 0 S DM DQ36 DQ37 DQ38 DQ39 DQS I/O 0 I/O 1 I/O 2 I/O 3 S DM DQS I/O 0 I/O 1 I/O 2 I/O 3 S DM D4 D22 D13 D31 DQS5 DQ40 DQ41 DQ42 DQ43 DQS I/O 3 I/O 2 I/O 1 I/O 0 S DM DQS I/O 3 I/O 2 I/O 1 I/O 0 S DM DM5/DQS14 DQ44 DQ45 DQ46 DQ47 DQS I/O 0 I/O 1 I/O 2 I/O 3 S DM DQS I/O 0 I/O 1 I/O 2 I/O 3 S DM D5 D23 D14 D32 DQS6 DQ48 DQ49 DQ50 DQ51 DQS I/O 3 I/O 2 I/O 1 I/O 0 S DM DQS I/O 3 I/O 2 I/O 1 I/O 0 S DM DM6/DQS15 DQ52 DQ53 DQ54 DQ55 DQS I/O 0 I/O 1 I/O 2 I/O 3 S DM DQS I/O 0 I/O 1 I/O 2 I/O 3 S DM D6 D24 D15 D33 DQS7 DQ56 DQ57 DQ58 DQ59 DQS I/O 3 I/O 2 I/O 1 I/O 0 S DM DM7/DQS16 D7 DQS I/O 3 I/O 2 I/O 1 I/O 0 S DM DQ60 DQ61 DQ62 DQ63 D25 DQS I/O 0 I/O 1 I/O 2 I/O 3 S DM D16 DQS I/O 0 I/O 1 I/O 2 I/O 3 S DM D34 DQS8 CB0 CB1 CB2 CB3 DQS I/O 3 I/O 2 I/O 1 I/O 0 S DM DM8/DQS17 D8 DQS I/O 3 I/O 2 I/O 1 I/O 0 S DM CB4 CB5 CB6 CB7 D26 DQS I/O 3 I/O 2 I/O 1 I/O 0 S DM D17 DQS I/O 3 I/O 2 I/O 1 I/O 0 S DM D35 Serial PD SCL WP A0 SA0 CS0 CS1 BA0-BAN A0-A13 RAS CAS CKE0 CKE1 WE PCK PCK R E G I S T E R RCS0 RCS1 RBA0 - RBAn RA0 - RA12 RRAS RCAS RCKE0 RCKE1 RWE RESET VDDSPD VDD/VDDQ SDA A2 SA2 SPD D0 - D35 D0 - D35 A1 SA1 VREF VSS CK0,CK0 PLL D0 - D35 D0 - D35 BA0-BAn: SDRAMs D0 - D35 A0-An: SDRAMs D0 - D35 RAS: SDRAMs D0 - D35 CAS: SDRAMs D0 - D35 CKE: SDRAMs D0 - D17 CKE: SDRAMs D18 - D35 WE: SDRAMs D0 - D35 Notes: 1. DQ-to-I/O wiring is shown as recommended but may be changed. 2. DQ/DQS/DM/CKE/CS relationships must be maintained as shown. 3. DQ, DQS, DM/DQS resistors: 22 Ohms. Revision 1.4 February, 2004 256MB, 512MB, 1GB Registered DIMM Absolute Maximum Ratings Parameter Voltage on any pin relative to Vss Voltage on VDD supply relative to Vss Storage temperature Power dissipation Short circuit current Symbol VIN, VOUT VDD,VDDQ TSTG PD IOS Value -0.5 ~ 3.6 -1.0 ~ 3.6 -55 ~ +150 1.5 * # of component 50 DDR SDRAM Unit V V °C W mA Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. Power & DC Operating Conditions (SSTL_2 In/Out) Recommended operating conditions (Voltage referenced to VSS=0V, TA=0 to 70°C) Parameter Supply voltage(for device with a nominal VDD of 2.5V) I/O Supply voltage I/O Reference voltage I/O Termination voltage(system) Input logic high voltage Input logic low voltage Input Voltage Level, CK and CK inputs Input Differential Voltage, CK and CK inputs Input leakage current Output leakage current Output High Current(Normal strengh driver) ;VOUT = VTT + 0.84V Output High Current(Normal strengh driver) ;VOUT = VTT - 0.84V Output High Current(Half strengh driver) ;VOUT = VTT + 0.45V Output High Current(Half strengh driver) ;VOUT = VTT - 0.45V Symbol VDD VDDQ VREF VTT VIH(DC) VIL(DC) VIN(DC) VID(DC) II IOZ IOH IOL IOH IOL Min 2.3 2.3 VDDQ/2-50mV VREF-0.04 VREF+0.15 -0.3 -0.3 0.3 -2 -5 -16.8 16.8 -9 9 Max 2.7 2.7 VDDQ/2+50mV VREF+0.04 VDDQ+0.3 VREF-0.15 VDDQ+0.3 VDDQ+0.6 2 5 V V V V V V V uA uA mA mA mA mA 3 1 2 4 4 Unit Note Notes : 1. Includes ± 25mV margin for DC offset on VREF, and a combined total of ± 50mV margin for all AC noise and DC offset on VREF, bandwidth limited to 20MHz. The DRAM must accommodate DRAM current spikes on VREF and internal DRAM noise coupled to VREF, both of which may result in VREF noise. VREF should be de-coupled with an inductance of ≤ 3nH. 2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and must track variations in the DC level of VREF 3. VID is the magnitude of the difference between the input level on CK and the input level on CK. 4. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in simulation. The AC and DC input specifications are relative to a VREF envelop that has been bandwidth limited to 200MHz Revision 1.4 February, 2004 256MB, 512MB, 1GB Registered DIMM DDR SDRAM IDD spec table M383(12)L3223ETS [ (32M x 8) * 9 , 256MB Module ] DDR SDRAM (VDD=2.7V, T = 10°C) Symbol IDD0 IDD1 IDD2P IDD2F IDD2Q IDD3P IDD3N IDD4R IDD4W IDD5 IDD6 Normal Low power IDD7A AA (DDR266@CL=2) 1,560 1,790 360 810 490 600 1,030 1,890 1,840 2,070 360 340 3,270 A2 (DDR266@CL=2) 1,350 1,570 360 810 490 600 1,030 1,890 1,840 2,070 360 340 2,250 B0 (DDR266@CL=2.5) 1,350 1,570 360 810 490 600 1,030 1,890 1,840 2,070 360 340 2,250 A0 (DDR200@CL=2) 1,180 1,360 330 670 450 530 860 1,580 1,490 1,810 330 320 2,480 Unit mA mA mA mA mA mA mA mA mA mA mA mA mA Optional Notes * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. M383(12)L6423ETS [ (32M x 8) * 18 , 512MB Module ] (VDD=2.7V, T = 10°C) Symbol IDD0 IDD1 IDD2P IDD2F IDD2Q IDD3P IDD3N IDD4R IDD4W IDD5 IDD6 Normal Low power IDD7A AA (DDR266@CL=2) 2,180 2,410 510 1,110 780 990 1,560 2,420 2,370 2,600 510 480 3,890 A2 (DDR266@CL=2) 1,880 2,100 510 1,110 780 990 1,560 2,420 2,370 2,600 510 480 3,410 B0 (DDR266@CL=2.5) 1,880 2,100 510 1,110 780 990 1,560 2,420 2,370 2,600 510 480 3,410 A0 (DDR200@CL=2) 1,660 1,840 480 950 720 880 1,350 2,070 1,980 2,290 480 460 2,970 Unit mA mA mA mA mA mA mA mA mA mA mA mA mA Optional Notes * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. Revision 1.4 February, 2004 256MB, 512MB, 1GB Registered DIMM DDR SDRAM IDD spec table M383(12)L6420ETS [ (64M x 4) * 18 , 512MB Module ] DDR SDRAM (VDD=2.7V, T = 10°C) Symbol IDD0 IDD1 IDD2P IDD2F IDD2Q IDD3P IDD3N IDD4R IDD4W IDD5 IDD6 Normal Low power IDD7A AA (DDR266@CL=2) 2,370 2,730 380 990 650 870 1,440 2,790 3,060 3,510 379 352 5,430 A2 (DDR266@CL=2) 2,070 2,430 380 990 650 870 1,440 2,790 3,060 3,510 379 352 4,950 B0 (DDR266@CL=2.5) 2,070 2,430 380 990 650 870 1,440 2,790 3,060 3,510 379 352 4,950 A0 (DDR200@CL=2) 1,850 2,120 360 830 590 750 1,220 2,300 2,480 3,110 360 330 4,280 Unit mA mA mA mA mA mA mA mA mA mA mA mA mA Optional Notes * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. M383(12)L2828ET1(0) [ (st.128M x 4) * 18 , 1GB Module ] (VDD=2.7V, T = 10°C) Symbol IDD0 IDD1 IDD2P IDD2F IDD2Q IDD3P IDD3N IDD4R IDD4W IDD5 IDD6 Normal Low power IDD7A AA (DDR266@CL=2) 3,490 3,850 558 1,470 1,100 1,530 2,370 3,720 3,990 4,440 558 504 6,550 A2 (DDR266@CL=2) 3,000 3,360 558 1,470 1,100 1,530 2,370 3,720 3,990 4,440 558 504 5,880 B0 (DDR266@CL=2.5) 3,000 3,360 558 1,470 1,100 1,530 2,370 3,720 3,990 4,440 558 504 5,880 A0 (DDR200@CL=2) 2,700 2,970 540 1,280 1,010 1,330 2,070 3,150 3,330 3,960 540 480 5,130 Unit mA mA mA mA mA mA mA mA mA mA mA mA mA Optional Notes * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. Revision 1.4 February, 2004 256MB, 512MB, 1GB Registered DIMM AC Operating Conditions Parameter/Condition Input High (Logic 1) Voltage, DQ, DQS and DM signals Input Low (Logic 0) Voltage, DQ, DQS and DM signals. Input Differential Voltage, CK and CK inputs Input Crossing Point Voltage, CK and CK inputs Symbol VIH(AC) VIL(AC) VID(AC) VIX(AC) 0.7 0.5*VDDQ-0.2 Min VREF + 0.31 VREF - 0.31 VDDQ+0.6 Max DDR SDRAM Unit V V V V Note 3 3 1 2 0.5*VDDQ+0.2 Note : 1. VID is the magnitude of the difference between the input level on CK and the input on CK. 2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same. 3. These parameters should be tested at the pim on actual components and may be checked at either the pin or the pad in simulation. the AC and DC input specificatims are refation to a Vref envelope that has been bandwidth limited 20MHz. Vtt=0.5*VDDQ RT=50Ω Output Z0=50Ω CLOAD=30pF VREF =0.5*VDDQ Output Load Circuit (SSTL_2) Input/Output Capacitance Parameter Input capacitance(A0 ~ A12, BA0 ~ BA1,RAS,CAS,WE ) Input capacitance(CKE0) Input capacitance( CS0) Input capacitance( CLK0, CLK0 ) Input capacitance(DM0~DM8) Data & DQS input/output capacitance(DQ0~DQ63) Data input/output capacitance (CB0~CB7) Symbol Min CIN1 CIN2 CIN3 CIN4 CIN5 Cout1 Cout2 9 9 9 11 10 10 10 (VDD=2.5V, VDDQ=2.5V, TA= 25°C, f=1MHz) M383(12)L3223ETS, M383(12)L6420ETS Max 11 11 11 12 11 11 11 pF pF pF pF pF pF pF Unit Parameter Input capacitance(A0 ~ A12, BA0 ~ BA1,RAS,CAS,WE ) Input capacitance(CKE0,CKE1) Input capacitance( CS0, CS1) Input capacitance( CLK0, CLK0 ) Input capacitance(DM0~DM8) Data & DQS input/output capacitance(DQ0~DQ63) Data input/output capacitance (CB0~CB7) Symbol CIN1 CIN2 CIN3 CIN4 CIN5 Cout1 Cout2 M383(12)L6423ETS, M383(12)L2828ET1(0) Min 9 9 9 11 14 14 14 Max 11 11 11 12 16 16 16 Unit pF pF pF pF pF pF pF Revision 1.4 February, 2004 256MB, 512MB, 1GB Registered DIMM AC Timming Parameters & Specifications Parameter Row cycle time Refresh row cycle time Row active time RAS to CAS delay Row precharge time Row active to Row active delay Write recovery time Last data in to Read command Col. address to Col. address delay Clock cycle time Clock high level width Clock low level width DQS-out access time from CK/CK Output data access time from CK/CK Data strobe edge to ouput data edge Read Preamble Read Postamble CK to valid DQS-in DQS-in setup time DQS-in hold time DQS falling edge to CK rising-setup time DQS falling edge from CK rising-hold DQS-in high level width DQS-in low level width DQS-in cycle time Address and Control Input setup Address and Control Input hold Address and Control Input setup Address and Control Input hold Data-out high impedence time from CK/ CK Data-out low impedence time from CK/ CK Input Slew Rate(for input only pins) Input Slew Rate(for I/O pins) Output Slew Rate(x4,x8) Output Slew Rate Matching Ratio(rise to CL=2.0 CL=2.5 DDR SDRAM Symbol tRC tRFC tRAS tRCD tRP tRRD tWR tWTR tCCD tCK tCH tCL tDQSCK tAC tDQSQ tRPRE tRPST tDQSS tWPRES tWPRE tDSS tDSH tDQSH tDQSL tDSC tIS tIH tIS tIH tHZ tLZ tSL(I) tSL(IO) tSL(O) tSLMR AA (DDR266@CL=2) Min 60 75 45 15 15 15 15 1 1 7.5 7.5 0.45 0.45 -0.75 -0.75 0.9 0.4 0.75 0 0.25 0.2 0.2 0.35 0.35 0.9 0.9 0.9 1.0 1.0 -0.75 -0.75 0.5 0.5 1.0 0.67 4.5 1.5 +0.75 +0.75 1.1 12 12 0.55 0.55 +0.75 +0.75 0.5 1.1 0.6 1.25 120K A2 (DDR266@CL=2) Min 65 75 45 20 20 15 15 1 1 7.5 7.5 0.45 0.45 -0.75 -0.75 0.9 0.4 0.75 0 0.25 0.2 0.2 0.35 0.35 0.9 0.9 0.9 1.0 1.0 -0.75 -0.75 0.5 0.5 1.0 0.67 4.5 1.5 +0.75 +0.75 1.1 12 12 0.55 0.55 +0.75 +0.75 0.5 1.1 0.6 1.25 120K B0 (DDR266@CL=2.5) Min 65 75 45 20 20 15 15 1 1 10 7.5 0.45 0.45 -0.75 -0.75 0.9 0.4 0.75 0 0.25 0.2 0.2 0.35 0.35 0.9 0.9 0.9 1.0 1.0 -0.75 -0.75 0.5 0.5 1.0 0.67 4.5 1.5 +0.75 +0.75 1.1 12 12 0.55 0.55 +0.75 +0.75 0.5 1.1 0.6 1.25 120K A0 (DDR200@CL=2) Min 70 80 48 20 20 15 15 1 1 10 0.45 0.45 -0.8 -0.8 0.9 0.4 0.75 0 0.25 0.2 0.2 0.35 0.35 0.9 1.1 1.1 1.1 1.1 -0.8 -0.8 0.5 0.5 1.0 0.67 4.5 1.5 +0.8 +0.8 1.1 12 0.55 0.55 +0.8 +0.8 0.6 1.1 0.6 1.25 120K Unit ns ns ns ns ns ns ns tCK tCK ns ns tCK tCK ns ns ns tCK tCK tCK ns tCK tCK tCK tCK tCK tCK ns ns ns ns ns ns V/ns V/ns V/ns Note Max Max Max Max 12 3 i,5.7~9 i,5.7~9 i, 6~9 i, 6~9 1 1 Revision 1.4 February, 2004 256MB, 512MB, 1GB Registered DIMM AA (DDR266@CL=2) Min Mode register set cycle time DQ & DM setup time to DQS DQ & DM hold time to DQS Control & Address input pulse width DQ & DM input pulse width Power down exit time Exit self refresh to non-Read command Exit self refresh to read command Refresh interval time Output DQS valid window Clock half period Data hold skew factor DQS write postamble time Active to Read with Auto precharge command Autoprecharge write recovery + Precharge time tMRD tDS tDH tIPW tDIPW tPDEX tXSNR tXSRD tREFI tQH tHP tQHS tWPST tRAP tDAL 0.4 20 (tWR/tCK) + (tRP/tCK) tHP -tQHS tCLmin or tCHmin 15 0.5 0.5 2.2 1.75 7.5 75 200 7.8 0.75 0.6 0.4 20 (tWR/tCK) + (tRP/tCK) tHP -tQHS tCLmin or tCHmin DDR SDRAM B0 (DDR266@CL=2.5) Min 15 0.5 0.5 2.2 1.75 7.5 75 200 7.8 0.75 0.6 0.4 20 (tWR/tCK) + (tRP/tCK) tHP -tQHS tCLmin or tCHmin 7.8 0.75 0.6 0.4 20 (tWR/tCK) + (tRP/tCK) tCK 13 tHP -tQHS tCLmin or tCHmin Parameter Symbol A2 (DDR266@CL=2) Min 15 0.5 0.5 2.2 1.75 7.5 75 200 A0 (DDR200@CL=2) Min 16 0.6 0.6 2.5 2 10 80 200 7.8 0.8 0.6 Unit ns ns ns ns ns ns ns tCK us ns ns ns tCK Note Max Max Max Max j, k j, k 8 8 4 11 10, 11 11 2 System Characteristics for DDR SDRAM The following specification parameters are required in systems using DDR266 & DDR200 devices to ensure proper system performance. these characteristics are for system simulation purposes and are guaranteed by design. Table 1 : Input Slew Rate for DQ, DQS, and DM AC CHARACTERISTICS PARAMETER DQ/DM/DQS input slew rate measured between VIH(DC), VIL(DC) and VIL(DC), VIH(DC) SYMBOL DCSLEW DDR266 MIN TBD MAX TBD DDR200 MIN 0.5 MAX 4.0 Units V/ns Notes a, m Table 2 : Input Setup & Hold Time Derating for Slew Rate Input Slew Rate 0.5 V/ns 0.4 V/ns 0.3 V/ns tIS 0 +50 +100 tIH 0 0 0 Units ps ps ps Notes i i i Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate Input Slew Rate 0.5 V/ns 0.4 V/ns 0.3 V/ns tDS 0 +75 +150 tDH 0 +75 +150 Units ps ps ps Notes k k k Revision 1.4 February, 2004 256MB, 512MB, 1GB Registered DIMM Table 4 : Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate Delta Slew Rate +/- 0.0 V/ns +/- 0.25 V/ns +/- 0.5 V/ns tDS 0 +50 +100 tDH 0 +50 +100 Units ps ps ps Notes j j j DDR SDRAM Table 5 : Output Slew Rate Characteristice (X4, X8 Devices only) Slew Rate Characteristic Pullup Slew Rate Pulldown slew Typical Range (V/ns) 1.2 ~ 2.5 1.2 ~ 2.5 Minimum (V/ns) 1.0 1.0 Maximum (V/ns) 4.5 4.5 Notes a,c,d,f,g,h b,c,d,f,g,h Table 6 : Output Slew Rate Characteristice (X16 Devices only) Slew Rate Characteristic Pullup Slew Rate Pulldown slew Typical Range (V/ns) 1.2 ~ 2.5 1.2 ~ 2.5 Minimum (V/ns) 0.7 0.7 Maximum (V/ns) 5.0 5.0 Notes a,c,d,f,g,h b,c,d,f,g,h Table 7 : Output Slew Rate Matching Ratio Characteristics AC CHARACTERISTICS PARAMETER Output Slew Rate Matching Ratio (Pullup to Pulldown) DDR266 MIN TBD MAX TBD DDR200 MIN 0.67 MAX 1.5 Notes e,m Revision 1.4 February, 2004 256MB, 512MB, 1GB Registered DIMM System Notes : a. Pullup slew rate is characteristized under the test conditions as shown in Figure 1. DDR SDRAM Test point Output 50Ω VSSQ Figure 1 : Pullup slew rate test load b. Pulldown slew rate is measured under the test conditions shown in Figure 2. VDDQ 50Ω Output Test point Figure 2 : Pulldown slew rate test load c. Pullup slew rate is measured between (VDDQ/2 - 320 mV +/- 250 mV) Pulldown slew rate is measured between (VDDQ/2 + 320 mV +/- 250 mV) Pullup and Pulldown slew rate conditions are to be met for any pattern of data, including all outputs switching and only one output switching. Example : For typical slew rate, DQ0 is switching For minmum slew rate, all DQ bits are switching from either high to low, or low to high. The remaining DQ bits remain the same as for previous state. d. Evaluation conditions Typical : 25 °C (T Ambient), VDDQ = 2.5V, typical process Minimum : 70 °C (T Ambient), VDDQ = 2.3V, slow - slow process Maximum : 0 °C (T Ambient), VDDQ = 2.7V, fast - fast process e. The ratio of pullup slew rate to pulldown slew rate is specified for the same temperature and voltage, over the entire temperature and voltage range. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process variation. f. Verified under typical conditions for qualification purposes. g. TSOPII package divices only. h. Only intended for operation up to 266 Mbps per pin. i. A derating factor will be used to increase tIS and tIH in the case where the input slew rate is below 0.5 V/ns as shown in Table 2. The Input slew rate is based on the lesser of the slew rates detemined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions. j. A derating factor will be used to increase tDS and tDH in the case where DQ, DM, and DQS slew rates differ, as shown in Tables 3 & 4. Input slew rate is based on the larger of AC-AC delta rise, fall rate and DC-DC delta rise, Input slew rate is based on the lesser of the slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions. The delta rise/fall rate is calculated as: {1/(Slew Rate1)} - {1/(Slew Rate2)} For example : If Slew Rate 1 is 0.5 V/ns and slew Rate 2 is 0.4 V/ns, then the delta rise, fall rate is - 0.5ns/V . Using the table given, this would result in the need for an increase in tDS and tDH of 100 ps. k. Table 3 is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the lesser on the lesser of the AC - AC slew rate and the DC- DC slew rate. The inut slew rate is based on the lesser of the slew rates deter mined by either VIH(ac) to VIL(ac) or VIH(DC) to VIL(DC), and similarly for rising transitions. m. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transi tions through the DC region must be monotony. Revision 1.4 February, 2004 256MB, 512MB, 1GB Registered DIMM Command Truth Table COMMAND Register Register Extended MRS Mode Register Set Auto Refresh Refresh Entry Self Refresh Exit CKEn-1 H H H L H CKEn X X H L H X CS L L L L H L RAS L L L H X L DDR SDRAM (V=Valid, X=Don′t Care, H=Logic High, L=Logic Low) CAS L L L H X H WE BA0,1 A10/AP L L H H X H V A0 ~ A9 A11, A12 Note 1, 2 1, 2 3 3 3 3 OP CODE OP CODE X X Row Address (A0~A9, A11,A12) L H L H X V X L H X X Column Address Column Address Bank Active & Row Addr. Read & Column Address Write & Column Address Burst Stop Precharge Bank Selection All Banks Entry Exit Entry Precharge Power Down Mode Exit DM No operation (NOP) : Not defined Auto Precharge Disable Auto Precharge Enable Auto Precharge Disable Auto Precharge Enable H H H H H L H L H H X X X X L H L H L L L L H L X H L H L H L H H H L X V X X H X V X X H L L H H X V X X H X V X H H L L L X V X X H X V V V 4 4 4 4, 6 7 5 Active Power Down X X X H X 8 9 9 X Note : 1. OP Code : Operand Code. A0 ~ A12 & BA0 ~ BA1 : Program keys. (@EMRS/MRS) 2. EMRS/ MRS can be issued only at all banks precharge state. A new command can be issued 2 clock cycles after EMRS or MRS. 3. Auto refresh functions are same as the CBR refresh of DRAM. The automatical precharge without row precharge command is meant by "Auto". Auto/self refresh can be issued only at all banks precharge state. 4. BA0 ~ BA1 : Bank select addresses. If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected. If BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank B is selected. If BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank C is selected. If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected. 5. If A10/AP is "High" at row precharge, BA0 and BA1 are ignored and all banks are selected. 6. During burst write with auto precharge, new read/write command can not be issued. Another bank read/write command can be issued after the end of burst. New row active of the associated bank can be issued at tRP after the end of burst. 7. Burst stop command is valid at every burst length. 8. DM sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges (Write DM latency is 0). 9. This combination is not defined for any function, which means "No Operation(NOP)" in DDR SDRAM. Revision 1.4 February, 2004 256MB, 512MB, 1GB Registered DIMM Physical Dimensions : 32M x 72 (M383L3223ETS) DDR SDRAM Units : Inches (Millimeters) 5.25 ± 0.005 (133.350 ± 0.13) 5.171 (131.350) 5.077 (128.950) 0.118 (3.00) REG PLL REG 0.100 Min (2.30 Min) A B 0.393 (10.00) 0.78 (19.80) 2.500 A B 0.10 M C BA 0.7 (17.80) 1.7 (43.33) 0.157 Max (3.99 Max) (0.167) (4.24) 0.050 ± 0.0039 (1.270 ± 0.10) 0.250 (6.350) 0.118 (3.00) 0.0787 R (2.00) 0.0078 ±0.006 (0.20 ±0.15) 0.050 (1.270) 0.1575 (4.00) 0.10 M C A M B (2.50 ) 0.1496 (3.80) 0.0787 R (2.00) 0.26 (6.62) 2.175 Detail A 0.071 (1.80) 0.100 0.157 (4.00) 0.039 ± 0.002 (1.000 ± 0.050) Detail B Tolerances : ± 0.005(.13) unless otherwise specified. The used device is 32Mx8 DDR SDRAM, TSOPII. DDR SDRAM Part No : K4H560838E Revision 1.4 February, 2004 256MB, 512MB, 1GB Registered DIMM Physical Dimensions: 64Mx72 (M383L6423ETS), (M383L6420ETS) DDR SDRAM Units : Inches (Millimeters) 5.25 ± 0.005 (133.350 ± 0.13) 5.171 (131.350) 5.077 (128.950) 0.118 (3.00) REG PLL REG 0.100 Min (2.30 Min) A B 0.393 (10.00) 0.78 (19.80) 2.500 A B 0.10 M C B A 0.7 (17.80) (0.167) (4.24) (2.50 ) 0.26 (6.62) 0.100 0.250 (6.350) 0.157 (4.00) 0.1496 (3.80) 0.039 ± 0.002 (1.000 ± 0.050) 0.0787 R (2.00) 0.0078 ±0.006 (0.20 ±0.15) 0.050 (1.270) 0.1575 (4.00) 0.118 (3.00) 2.175 Detail A 0.071 (1.80) Detail B 0.10 M C A M B Tolerances : ± 0.005(.13) unless otherwise specified. The used device is 32Mx8, 64Mx4, DDR SDRAM, TSOPII. DDR SDRAM Part No : K4H560838E, K4H560438E Revision 1.4 February, 2004 1.7 (43.33) 0.157 Max (3.99 Max) 0.050 ± 0.0039 (1.270 ± 0.10) 0.0787 R (2.00) 256MB, 512MB, 1GB Registered DIMM Physical Dimensions: 128Mx72 (M383L2828ET1) DDR SDRAM Units : Inches (Millimeters) 5.25 ± 0.005 (133.350 ± 0.13) 5.171 (131.350) 5.077 (128.950) 0.118 (3.00) REG PLL REG 0.100 Min (2.30 Min) A B 0.393 (10.00) 0.78 (19.80) 2.500 A B 0.10 M C BA 0.7 (17.80) 1.7 (43.33) 0.268 Max (6.81 Max) (0.167) (4.24) 0.050 ± 0.0039 (1.270 ± 0.10) (2.50 ) 0.250 (6.350) 0.157 (4.00) 0.1496 (3.80) 0.118 (3.00) 0.0787 R (2.00) 0.0078 ± 0.006 (0.20 ± 0.15) 0.050 (1.270) 0.1575 (4.00) 0.10 M C A M B 0.0787 R (2.00) 2.175 Detail A 0.071 (1.80) 0.100 0.26 (6.62) 0.039 ± 0.002 (1.000 ± 0.050) Detail B Tolerances : ± 0.005(.13) unless otherwise specified The used device is st.128Mx4 SDRAM, 66TSOPII SDRAM Part No. : K4H510638E Revision 1.4 February, 2004 256MB, 512MB, 1GB Registered DIMM Physical Dimensions : 32M x 72 (M312L3323ETS) DDR SDRAM Units : Inches (Millimeters) 5.25 ± 0.005 (133.350 ± 0.13) 5.171 (131.350) 5.077 (128.950) 0.0787 R (2.00) 0.118 (3.00) REG PLL 1.2 (30.48) 0.100 Min (2.50 Min) (2.30 Min) A B 0.393 (10.00) 0.78 (19.80) 2.500 A B 0.10 M CBA 0.157 Max (3.99 Max) REG (0.157) (4.00) 0.7 (17.80) 0.050 ± 0.0039 (1.270 ± 0.10) 0.118 (3.00) (2.50 ) 0.26 (6.62) 0.100 0.250 (6.350) 0.157 (4.00) 0.1496 (3.80) 0.039 ± 0.002 (1.000 ± 0.050) 0.0787 R (2.00) 0.0078 ± 0.006 (0.20 ± 0.15) 0.050 (1.270) 0.1575 (4.00) 2.175 Detail A 0.071 (1.80) Detail B 0.10 M C A M B Tolerances : ± 0.005(.13) unless otherwise specified The used device is 32Mx8 DDR SDRAM, TSOPII SDRAM Part No : K4H560838E Revision 1.4 February, 2004 256MB, 512MB, 1GB Registered DIMM Physical Dimensions: 64Mx72 (M312L6423ETS), (M312L6420ETS) DDR SDRAM Units : Inches (Millimeters) 5.25 ± 0.005 (133.350 ± 0.13) 5.171 (131.350) 5.077 (128.950) 0.0787 R (2.00) 0.118 (3.00) REG PLL 1.2 (30.48) 0.100 Min (2.50 Min) (2.30 Min) A B 0.393 (10.00) 0.78 (19.80) 2.500 A B 0.10 M CBA 0.157 Max (3.99 Max) REG (0.157) (4.00) 0.7 (17.80) 0.050 ± 0.0039 (1.270 ± 0.10) 0.118 (3.00) (2.50 ) 0.100 0.26 (6.62) 0.250 (6.350) 0.157 (4.00) 0.1496 (3.80) 0.039 ± 0.002 (1.000 ± 0.050) 0.0787 R (2.00) 0.0078 ± 0.006 (0.20 ± 0.15) 0.050 (1.270) 0.1575 (4.00) 2.175 Detail A 0.071 (1.80) Detail B 0.10 M C A M B Tolerances : ± 0.005(.13) unless otherwise specified The used device is 32Mx8, 64Mx4 DDRSDRAM, TSOPII SDRAM Part No. : K4H560838E, K4H560438E Revision 1.4 February, 2004 256MB, 512MB, 1GB Registered DIMM Physical Dimensions: 128Mx72 (M312L2828ET0) DDR SDRAM Units : Inches (Millimeters) 5.25 ± 0.005 (133.350 ± 0.13) 5.171 (131.350) 5.077 (128.950) 0.0787 R (2.00) 0.118 (3.00) Reg. 1.2 (30.48) 0.100 Min (2.50 Min) (2.30 Min) A B 0.393 (10.00) 0.78 (19.80) 2.500 A B 0.10 M CBA 0.268 Max (6.81 Max) PLL (0.157) (4.00) 0.7 (17.80) 0.050 ± 0.0039 (1.270 ± 0.10) 0.118 (3.00) (2.50 ) 0.26 (6.62) 0.100 0.250 (6.350) 0.157 (4.00) 0.1496 (3.80) 0.039 ± 0.002 (1.000 ± 0.050) 0.0787 R (2.00) 0.0078 ± 0.006 (0.20 ± 0.15) 0.050 (1.270) 0.1575 (4.00) 2.175 Detail A 0.071 (1.80) Detail B 0.10 M C A M B Tolerances : ± 0.005(.13) unless otherwise specified The used device is st.128Mx4 SDRAM, 66TSOPII SDRAM Part NO : K4H510638E Revision 1.4 February, 2004