MR18R326GAG0-CM8

MR18R326GAG0 Change History Version 1.0 (Mar. 2004) * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet Page 0 Version 1.0 Mar. 2004 MR18R326GAG0 (32Mx18)*16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V Overview The RIMM module is a general purpose high- performance memory module suitable for use in a broad range of applications including computer memory, personal computers, workstations and other applications where high bandwidth and low latency are required. The RIMM module consists of 576Mb RDRAM devices. These are extremely high-speed CMOS DRAMs organized as 32M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits up to 1066 MHz transfer rates while using conventional system and board design technologies. RDRAM devices are capable of sustained data transfers at 0.94 ns per two bytes (7.5ns per 16 bytes). The RDRAM architecture enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed, memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The RDRAM device's 32-bank architecture supports up to four simultaneous transactions per device. Key Timing Parameters/Part Numbers The following table lists the frequency and latency bins available for RIMM modules. Table 1: Part Number by Freq. & Latency Speed Organization Bin tRAC I/O (Row Freq. Access (MHz) Time) ns 1066 800 32P 40 Part Number 512M x 18 -CT9 -CM8 MR18R326GAG0-CT9 MR18R326GAG0-CM8 Form Factor The RIMM modules are offered in 184-pad 1mm edge connector pad pitch suitable for 184 contact RIMM connectors. Figure 1 below, shows a sixteen device RIMM module. Features ♦ High speed up to 1066 MHz RDRAM storage ♦ 184 edge connector pads with 1mm pad spacing ♦ Module PCB size : 133.35mm x 34.93mm x 1.27mm ♦ Each RDRAM device has 32 banks, for a total of 512 ♦ Gold plated edge connector pad contacts ♦ Serial Presence Detect(SPD) support ♦ Operates from a 2.5 volt supply (±5%) ♦ Powerdown self refresh modes ♦ Separate Row and Column buses for higher efficiency ♦ WBGA lead free package (92 balls) (5.25” x 1.375” x 0.05”) banks on 1.1GB module Note: On double sided modules, RDRAM devices are also installed on bottom side of PCB. Figure 1: RIMM Module shown with heat spreader removed Page 1 Version 1.0 Mar. 2004 MR18R326GAG0 Table 2: Module Pad Numbers and Signal Names Pin A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 A21 A22 A23 A24 A25 A26 A27 A28 A29 A30 A31 A32 A33 A34 A35 A36 A37 A38 A39 A40 A41 A42 A43 A44 A45 A46 Pin Name Gnd LDQA8 Gnd LDQA6 Gnd LDQA4 Gnd LDQA2 Gnd LDQA0 Gnd LCTMN Gnd LCTM Gnd NC Gnd LROW1 Gnd LCOL4 Gnd LCOL2 Gnd LCOL0 Gnd LDQB1 Gnd LDQB3 Gnd LDQB5 Gnd LDQB7 Gnd LSCK Vcmos SOUT Vcmos NC Gnd NC Vdd Vdd NC NC NC NC Pin B1 B2 B3 B4 B5 B6 B7 B8 B9 B10 B11 B12 B13 B14 B15 B16 B17 B18 B19 B20 B21 B22 B23 B24 B25 B26 B27 B28 B29 B30 B31 B32 B33 B34 B35 B36 B37 B38 B39 B40 B41 B42 B43 B44 B45 B46 Pin Name Gnd LDQA7 Gnd LDQA5 Gnd LDQA3 Gnd LDQA1 Gnd LCFM Gnd LCFMN Gnd NC Gnd LROW2 Gnd LROW0 Gnd LCOL3 Gnd LCOL1 Gnd LDQB0 Gnd LDQB2 Gnd LDQB4 Gnd LDQB6 Gnd LDQB8 Gnd LCMD Vcmos SIN Vcmos NC Gnd NC Vdd Vdd NC NC NC NC Pin A47 A48 A49 A50 A51 A52 A53 A54 A55 A56 A57 A58 A59 A60 A61 A62 A63 A64 A65 A66 A67 A68 A69 A70 A71 A72 A73 A74 A75 A76 A77 A78 A79 A80 A81 A82 A83 A84 A85 A86 A87 A88 A89 A90 A91 A92 Pin Name NC NC NC NC Vref Gnd SCL Vdd SDA SVdd SWP Vdd RSCK Gnd RDQB7 Gnd RDQB5 Gnd RDQB3 Gnd RDQB1 Gnd RCOL0 Gnd RCOL2 Gnd RCOL4 Gnd RROW1 Gnd NC Gnd RCTM Gnd RCTMN Gnd RDQA0 Gnd RDQA2 Gnd RDQA4 Gnd RDQA6 Gnd RDQA8 Gnd Pin B47 B48 B49 B50 B51 B52 B53 B54 B55 B56 B57 B58 B59 B60 B61 B62 B63 B64 B65 B66 B67 B68 B69 B70 B71 B72 B73 B74 B75 B76 B77 B78 B79 B80 B81 B82 B83 B84 B85 B86 B87 B88 B89 B90 B91 B92 Pin Name NC NC NC NC Vref Gnd SA0 Vdd SA1 SVdd SA2 Vdd RCMD Gnd RDQB8 Gnd RDQB6 Gnd RDQB4 Gnd RDQB2 Gnd RDQB0 Gnd RCOL1 Gnd RCOL3 Gnd RROW0 Gnd RROW2 Gnd NC Gnd RCFMN Gnd RCFM Gnd RDQA1 Gnd RDQA3 Gnd RDQA5 Gnd RDQA7 Gnd Page 2 Version 1.0 Mar. 2004 MR18R326GAG0 Table 3: Module Connector Pad Description Signal Pins A1, A3, A5, A7, A9, A11, A13, A15, A17, A19, A21, A23, A25, A27, A29, A31, A33, A39, A52, A60, A62, A64, A66, A68, A70, A72, A74, A76, A78, A80, A82, A84, A86, A88, A90, A92, B1, B3, B5, B7, B9, B11, B13, B15, B17, B19, B21, B23, B25, B27, B29, B31, B33, B39, B52, B60, B62, B64, B66, B68, B70, B72, B74, B76, B78, B80, B82, B84, B86, B88, B90, B92 B10 B12 B34 A20, B20, A22, B22, A24 A14 A12 I I I I I I RSL RSL VCMOS RSL RSL RSL I/O Type Description Gnd Ground reference for RDRAM core and interface. 72 PCB connector pads. LCFM LCFMN LCMD LCOL4.. LCOL0 LCTM LCTMN LDQA8.. LDQA0 LDQB8.. LDQB0 LROW2.. LROW0 LSCK Clock from master. Interface clock used for receiving RSL signals from the Channel. Positive polarity. Clock from master. Interface clock used for receiving RSL signals from the Channel. Negative polarity. Serial Command used to read from and write to the control registers. Also used for power management. Column bus. 5-bit bus containing control and address information for column accesses. Clock to master. Interface clock used for transmitting RSL signals to the Channel. Positive polarity. Clock to master. Interface clock used for transmitting RSL signals to the Channel. Negative polarity. Data bus A. A 9-bit bus carrying a byte of read or write data between the Channel and the RDRAM device. LDQA8 is non-functional on modules with x16 RDRAM devices. Data bus B. A 9-bit bus carrying a byte of read or write data between the Channel and the RDRAM device. LDQB8 is nonfunctional on modules with x16 RDRAM devices. Row bus. 3-bit bus containing control and address information for row accesses. Serial Clock input. Clock source used to read from and write to the RDRAM control registers. These pads are not connected. These 24 connector pads are reserved for future use. Clock from master. Interface clock used for receiving RSL signals from the Channel. Positive polarity. Clock from master. Interface clock used for receiving RSL signals from the Channel. Negative polarity. Serial Command Input. Pin used to read from and write to the control registers. Also used for power management. A2, B2, A4, B4, A6, B6, A8, B8, A10 I/O RSL B32, A32, B30, A30, B28, A28, B26, A26, B24 B16, A18, B18 A34 A16, B14, A38, B38, A40, B40, A43, B43, A44, B44, A45, B45, A46, B46, A47, B47, A48, B48, A49, B49, A50, B50, A77, B79 B83 B81 B59 I/O RSL I I RSL VCMOS NC RCFM RCFMN RCMD I I I RSL RSL VCMOS Page 3 Version 1.0 Mar. 2004 MR18R326GAG0 Signal RCOL4.. RCOL0 RCTM RCTMN RDQA8.. RDQA0 RDQB8.. RDQB0 RROW2.. RROW0 RSCK SA0 SA1 SA2 SCL SDA SIN SOUT SVDD SWP VCMOS Vdd Vref Pins A73, B73, A71, B71, A69 A79 A81 A91, B91, A89, B89, A87, B87, A85, B85, A83 B61, A61, B63, A63, B65, A65, B67, A67, B69 B77, A75, B75 A59 B53 B55 B57 A53 A55 B36 A36 A56, B56 A57 A35, B35, A37, B37 A41, A42, A54, A58, B41, B42, B54, B58 A51, B51 I/O I I I Type RSL RSL RSL Description Column bus. 5-bit bus containing control and address information for column accesses. Clock to master. Interface clock used for transmitting RSL signals to the Channel. Positive polarity. Clock to master. Interface clock used for transmitting RSL signals to the Channel. Negative polarity. Data bus A. A 9-bit bus carrying a byte of read or write data between the Channel and the RDRAM device. RDQA8 is non-functional on modules x16 RDRAM devices. Data bus B. A 9-bit bus carrying a byte of read or write data between the Channel and the RDRAM device. RDQB8 is non-functional on modules x16 RDRAM devices. Row bus. 3-bit bus containing control and address information for row accesses. Serial Clock input. Clock source used to read from and write to the RDRAM control registers. Serial Presence Detect Address 0. Serial Presence Detect Address 1. Serial Presence Detect Address 2. Serial Presence Detect Clock. Serial Presence Detect Data (Open Collector I/O). Serial I/O for reading from and writing to the control registers. Attaches to SIO0 of the first RDRAM device on the module. Serial I/O for reading from and writing to the control registers. Attaches to SIO1 of the last RDRAM device on the module. SPD Voltage. Used for signals SCL, SDA, SWE, SA0, SA1 and SA2. I/O RSL I/O RSL I I I I I I I/O I/O I/O RSL VCMOS SVDD SVDD SVDD SVDD SVDD VCMOS VCMOS I SVDD Serial Presence Detect Write Protect (active high). When low, the SPD can be written as well as read. CMOS I/O Voltage. Used for signals CMD, SCK, SIN, SOUT. Supply voltage for the RDRAM core and interface logic. Logic threshold reference voltage for RSL signals. Page 4 Version 1.0 Mar. 2004 MR18R326GAG0 • • LSCK LCMD VREF • SIN SOUT RSCK RCMD Note 1. Rambus Channel signals form a loop through the RIMM module, with the exception of the SIO chain. Note 2. See Serial Presence Detection Specification for information on the SPD device and its contents. LDQA8 LDQA7 LDQA6 LDQA5 LDQA4 LDQA3 LDQA2 LDQA1 LDQA0 LCFM LCFMN LCTM LCTMN LROW2 LROW1 LROW0 LCOL4 LCOL3 LCOL2 LCOL1 LCOL0 LDQB0 LDQB1 LDQB2 LDQB3 LDQB4 LDQB5 LDQB6 LDQB7 LDQB8 DQA8 DQA7 DQA6 DQA5 DQA4 DQA3 DQA2 DQA1 DQA0 CFM CFMN CTM CTMN ROW2 ROW1 ROW0 COL4 COL3 COL2 COL1 COL0 DQB0 DQB1 DQB2 DQB3 DQB4 DQB5 DQB6 DQB7 DQB8 DQA8 DQA7 DQA6 DQA5 DQA4 DQA3 DQA2 DQA1 DQA0 CFM CFMN CTM CTMN ROW2 ROW1 ROW0 COL4 COL3 COL2 COL1 COL0 DQB0 DQB1 DQB2 DQB3 DQB4 DQB5 DQB6 DQB7 DQB8 DQA8 DQA7 DQA6 DQA5 DQA4 DQA3 DQA2 DQA1 DQA0 CFM CFMN CTM CTMN ROW2 ROW1 ROW0 COL4 COL3 COL2 COL1 COL0 DQB0 DQB1 DQB2 DQB3 DQB4 DQB5 DQB6 DQB7 DQB8 DQA8 DQA7 DQA6 DQA5 DQA4 DQA3 DQA2 DQA1 DQA0 CFM CFMN CTM CTMN ROW2 ROW1 ROW0 COL4 COL3 COL2 COL1 COL0 DQB0 DQB1 DQB2 DQB3 DQB4 DQB5 DQB6 DQB7 DQB8 RDQA8 RDQA7 RDQA6 RDQA5 RDQA4 RDQA3 RDQA2 RDQA1 RDQA0 RCFM RCFMN RCTM RCTMN RROW2 RROW1 RROW0 RCOL4 RCOL3 RCOL2 RCOL1 RCOL0 RDQB0 RDQB1 RDQB2 RDQB3 RDQB4 RDQB5 RDQB6 RDQB7 RDQB8 Serial Presence Detect SDA Figure 2: RIMM Module Functional Diagram RDRAM Device(576Mb) RDRAM Device(576Mb) RDRAM Device(576Mb) RDRAM Device(576Mb) Vcc SCL SDA WP A0 A1 A2 U0 SCL SWP 47KΩ SVDD SIO0 SIO1 SCK CMD Vref SIO0 SIO1 SCK CMD Vref SIO0 SIO1 SCK CMD Vref SIO0 SIO1 SCK CMD Vref UN U1 U2 U3 SA0 SA1 SA2 Page 5 Version 1.0 Mar. 2004 1 per 2 RDRAM devices 0.22µF 1 per 2 RDRAM devices Plus one Near Connector 0.22µF 2 per RDRAM device 0.22µF Module Capacity 1152MB 16 N VCMOS VREF Gnd Gnd Vdd Gnd SVDD 0.22µF Gnd • • • MR18R326GAG0 Absolute Maximum Ratings Table 4: Absolute Maximum Ratings Symbol VI,ABS VDD,ABS TSTORE TPLATE Parameter Voltage applied to any RSL or CMOS signal pad with respect to Gnd Voltage on VDD with respect to Gnd Storage temperature Plate temperature Min - 0.3 - 0.5 - 50 Max VDD + 0.3 VDD + 1.0 100 92 Unit V V °C °C DC Recommended Electrical Conditions Table 5: DC Recommended Electrical Conditions Symbol VDD VCMOS VREF VSPD Supply voltage CMOS I/O power supply at pad for 2.5V controllers: CMOS I/O power supply at pad for 1.8V controllers: Reference voltage Serial Presence Detector- Positive power supply Parameter and Conditions Min 2.50 - 0.13 VDD 1.8 - 0.1 1.4 - 0.2 2.2 Max 2.50 + 0.13 VDD 1.8 + 0.2 1.4 + 0.2 3.6 Unit V V V V V Table 6: RIMM Module Capacity and Number of RDRAM device RIMM Module Capacity: 1152MB Number of 576Mb RDRAM devices 16 Page 6 Version 1.0 Mar. 2004 MR18R326GAG0 RIMM Module Current Profile Table 7: RIMM Module Current Profile RIMM Module Capacity IDD Number of 576Mb RDRAM devices RIMM Module power conditions a IDD1 One RDRAM in Readb, balance in NAP mode One RDRAM in Readb, balance in Standby mode One RDRAM in Readb, balance in Active mode One RDRAM in Write, balance in NAP mode One RDRAM in Write, balance in Standby mode One RDRAM in Write, balance in Active mode Freq -1066 -800 -1066 -800 -1066 -800 -1066 -800 -1066 -800 -1066 -800 1152MB 16 Max 960c mA 780 2550 mA 2145 3300 mA 2745 990 mA 790 2580 mA 2155 3330 mA 2755 Unit IDD2 IDD3 IDD4 IDD5 IDD6 a. Actual power will depend on memory controller and usage patterns. Power does not include Refresh Current. b. I/O current is a function of the % of 1’s, to add I/O power for 50% 1’s for a X16 need to add 257mA or 290mA for X18 ECC module for the following: VDD = 2.5V, VTERM = 1.8V, VREF = 1.4V and VDIL = VREF - 0.5V. c. Current values represent X18(Ecc) Page 7 Version 1.0 Mar. 2004 MR18R326GAG0 AC Electrical Specifications Table 8: AC Electrical Specifications Symbol ZL ZUL-CMOS Module Impedance of SCK and CMOS signals Propagation Delay variation of RSL signals. Average clock delay from finger to finger of all RSL clock nets (CTM, CTMN, CFM and CFMN) Propagation delay variation of RSL signals with respect to TPD b, c for 16 device modules Parameter and Conditions Module Impedance of RSL Signals Min 25.2 Typ 28 Max 30.8 Unit Ω Ω 23.8 28 32.2 TPD ∆TPD ∆TPD-CMOS ∆TPD-SCK,CMD Vα/VIN VXF/VIN VXB/VIN - See Table10a,b 24 250 200 See Table10a See Table10a See Table10a ns -24 -250 -200 ps ps ps % % % Propagation delay variation of SCK signals with respect to an average clock delay Propagation delay variation of CMD signals with respect to SCK signal Attenuation Limit Forward crosstalk coefficient (300ps input rise time @ 20%-80%) Backward crosstalk coefficient (300ps input rise time @ 20%80%) a. Table 10 lists parameters and specifications for different storage capacity RIMM Modules that use 576Mb RDRAM devices. b. TPD or Average clock delay is defined as the delay from finger to finger of RSL signal. c. If the RIMM module meets the following specification, then it is compliant to the specification. If the RIMM module does not meet these specifications, then the specification can be adjusted by the "Adjusted ∆TPD Specification" table 9 below. Adjusted ∆TPD Specification Table 9: Adjusted ∆TPD Specification Symbol ∆TPD a. Where: Parameter and Conditions Propagation delay variation of RSL signals with respect to TPD for 16 device modules Adjusted Min/Max +/-[24+(18*N*∆Z0)]a Absolute Min / Max -50 50 Unit ps N = Number of RDRAM devices installed on the RIMM module ∆Z0 = delta Z0% = (max Z0 - min Z0)/(min Z0) (max Z0 and min Z0 are obtained from the loaded (high impedance) impedance coupons of all RSL layers on the modules) Page 8 Version 1.0 Mar. 2004 MR18R326GAG0 AC Electrical Specifications for RIMM Modules Table 10: AC Electrical Specifications for RIMM Modules RIMM Module Capacity Symbol Number of 576Mb RDRAM devices Parameter and Condition for RIMM Modules 1152MB 16 Freq. -1066 Max 2.11 ns -800 -1066 2.11 27.0 % -800 25.0 8.0 % -800 -1066 -800 -1066 8.0 2.5 % 2.5 1.2 1.2 Ω -1066 Unit TPD Propagation Delay, all RSL signals Vα/VIN Attenuation Limit VXF/VIN Forward crosstalk coefficient (300ps input rise time @ 20%80%) Backward crosstalk coefficient (300ps input rise time @ 20%-80%) VXB/VIN RDC DC Resistance Limit -800 Page 9 Version 1.0 Mar. 2004 MR18R326GAG0 Physical Dimensions -1 ( For PCB ) The following defines the RIMM module dimensions. All units are in millimeters with inches in brackets[ ], where appropriate. The dimensions without tolerance specification use the default tolerance of ±0.127[±0.005]. 133.35±0.127[5.250±0.005] 6.35[0.25] 3.00[0.118] 120.65[4.75] DIA 2.44 R 2.00 + 17.78[0.700] COMPONENT AREA (A SIDE) 4.00±0.15 [0.157±0.006] 34.93[1.375] + 7.468[0.294] 5.68[0.2236] Min.6.35[0.25] 29.21[1.15] A-1 DETAIL A 1.00[0.039] DETAIL B 11.50[0.453] A-92 45.00[1.772] R 1.00 78.175[3.078] 45.00[1.772] 4.50[0.177] 55.175±0.08[2.172±0.003] B-1 B-92 8.60[0.339] COMPONENT AREA (B SIDE) Note : The gray area above represents the contact surface of the heat spreader. 0.80±0.10 [0.031±0.004] Heat spreader 1.00[0.039] Min.4.88 [0.192] 0.15±0.10 [0.006±0.004] 2.99±0.05 [0.12±0.002] 3.00±0.10 [0.12±0.004] 2.00±0.10 [0.079±0.004] DETAIL A DETAIL B Figure 4: RIMM Module PCB Physical Dimensions Page 10 Version 1.0 Mar. 2004 MR18R326GAG0 Physical Dimensions -2 ( For Heat Spreader ) The following defines the RIMM module dimensions. All units are in millimeters with inches in brackets[ ], where appropriate. The dimensions without tolerance specification use the default tolerance of ±0.127[±0.005]. 132.76±0.25[5.226±0.009] 127.66±0.12[5.023±0.005] 112.7±0.12[4.436±0.005] 2.9 [0.114] 29.4[1.157] DIA 2.36±0.05[0.09±0.001] Center-Point WARNING ! HOT SURFACE http://www.samsungsemi.com 12.7±0.07[0.5±0.002] 12.7±0.07[0.5±0.002] 1.00±0.07 [0.04±0.002] 133.35±0.127[5.250±0.005] A 29.4[1.157] 34.93[1.375] WARNING ! HOT SURFACE http://www.samsungsemi.com A SECTION A-A Max 7.80 [0.307] Heat Spreader CSP Thermal Conductive Gap Filling Material PCB 1.27±0.10 [0.050±0.004] [ Double side module ] Figure 4: Heat Spreader Physical Dimensions Page 11 Version 1.0 Mar. 2004 MR18R326GAG0 Standard RIMM Module Marking The RIMM modules available from Samsung are marked like Figure 7 below. This marking also assists users to specify and verify if the correct RIMM modules are installed in their systems. In the diagram, a label is shown attached to A B C D E F G the RIMM module’s heat spreader. Information contained on the label is specific to the RIMM module and provides RDRAM device information without requiring removal of the RIMM module’s heat spreader. KOREA 0330 1GB /16 ECC MR18R326GAG0-CT9 1066-32P 012 L Label Field A B C D E F G H I J K L Vendor Logo Country Year & Week code Module Memory Capacity Number of RDRAM devices ECC Support Notice! Caution Logo Gerber & SPD Version tRAC Memory Speed Part No. K J I H Marked Text SAMSUNG KOREA yyww 1GB 16 blank = 8 bit Bytes ECC = 9 bit Bytes Gerber : 01 = 0.1 ver. SPD : -32P, -40 1066, 800 See Table 1 2 = 1.3 ver. Unit RDRAM devices ns MHz - Description RIMM Module Vendor SAMSUNG Logo Area Country of origin Manufactured Year & Week code Number of 9-bit MBytes of RDRAM storage in RIMM module Number of RDRAM devices contained in the RIMM module Indicates whether the RIMM module supports 8 (non ECC) or 9 (ECC) bit Bytes Hot surface caution notice. ISO Standard PCB Gerber file & SPD code version used on RIMM Module Row Access Time Data transfer speed for RDRAM devices SAMSUNG RIMM Module part No. Figure 7: RIMM Module Marking Example Page 12 Version 1.0 Mar. 2004 MR18R326GAG0 Table Of Contents Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Key Timing Parameters/Part Numbers . . . . . . . . . . . . . . . . 1 Module Pad Numbers and Signal Names . . . . . . . . . . . . . . 2 Module Connector Pad Description . . . . . . . . . . . . . . . 3 - 4 RIMM Module Functional Diagram . . . . . . . . . . . . . . . . . . 5 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . 6 DC Recommended Electrical Conditions . . . . . . . . . . . . . . 6 RIMM Module Supply Current Profile . . . . . . . . . . . . . . . . 7 AC Electrical Specifications . . . . . . . . . . . . . . . . . . . . . 8 - 9 Physical Dimensions -1 ( For PCB ) . . . . . . . . . . . . . . . . . 10 Physical Dimensions -2 ( For Heat Spreader) . . . . . . . . . . 11 Standard RIMM Module Marking. . . . . . . . . . . . . . . . . . . 12 Copyright © March 2004, Samsung Electronics. All rights reserved. Direct Rambus, Direct RDRAM and SO-RIMM are trademarks of Rambus Inc. Rambus, RDRAM, RIMM and the Rambus Logo are registered trademarks of Rambus Inc. This document contains advanced information that is subject to change by Samsung Electronics without notice Document Version 1.0 Samsung Electronics Co. Ltd. San #16 Banwol-ri, Taean-Eup Hwasung-City, Gyeonggi-Do, KOREA Telephone: 82-31-208-6369 Fax: 82-31-208-6799 http://www.intl.samsungsemi.com Page 13 Version 1.0 Mar. 2004