2SA1215

2SA1215 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2921) ■Electrical Characteristics ICBO Ratings Unit VCB=–160V –100max µA 36.4±0.3 24.4±0.2 VEB=–5V –100max µA IC=–25mA –160min V VCEO –160 V IEBO VEBO –5 V V(BR)CEO IC –15 A hFE VCE=–4V, IC=–5A 50min∗ IB –4 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V PC 150(Tc=25°C) W fT VCE=–12V, IE=2A 50typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 400typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 2-ø3.2±0.1 7 9 21.4±0.3 20.0min a b 2 3 IC (A) VB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –60 12 –5 5 –500 500 0.25typ 0.85typ 0.2typ –1 –2 –3 ew 0 0 –0.2 –0.4 –0.6 –0.8 m m (V C E =–4V) 25˚C 100 –30˚C 50 30 –0.02 –5 –10 –15 N –1 Transient Thermal Resistance DC Curr ent Gain h FE ec o –0.5 –0.1 125˚C Collector Current I C (A) –0.1 –0.5 mp) ) p) em emp e Te –2 –1 –5 –10 –15 2 1 0.5 0.1 1 10 Collector Current I C (A) f T – I E Characteristics (Typical) 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 160 10 m C –5 si nk Without Heatsink Natural Cooling at –0.5 80 he –1 120 ite 20 D fin 40 –10 In Collector Curr ent I C (A) p ith Ty s 60 W Ma xim um Powe r Dissipat io n P C (W) –40 80 Cut- off F req uency f T ( MH Z ) DC Curr ent Gain h FE R ot 10 –0.02 –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 200 50 0 Base-Emittor Voltage V B E (V) (V C E =–4V) Typ 0 –1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 100 eT ˚C ( –5A –4 Collector-Emitter Voltage V C E (V) 200 –5 Cas rN I C =–10A θ j- a ( ˚C/W) 0 –1 –10 en 0 Weight : Approx 18.4g a. Part No. b. Lot No. (V C E =–4V) 125 I B =–20mA Collector Current I C (A) –50mA –4 fo –10 0mA –8 –2 d Collector Current I C (A) mA –1 50 m A de –200 E –15 –3 Collector-Emitter Saturation Voltage V C E (s at) (V ) A A A m A 0m 0m 0m 0m 50 –60 –50 –40 –30 –7 A C I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) –16 –12 B es ig RL (Ω) 5.45±0.1 D VCC (V) 3.0 +0.3 -0.1 ns 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 1.05 +0.2 -0.1 Cas Tstg 6.0±0.2 2.1 ˚C ( V External Dimensions MT-200 (Ta=25°C) Conditions –30 –160 VCBO Symbol se T Unit (Ca Ratings 25˚C ■Absolute maximum ratings (Ta=25°C) Symbol Application : Audio and General Purpose 4.0max LAPT 40 Without Heatsink 0 0.02 0.1 1 Emitter Current I E (A) 12 10 –0.2 –2 –10 –100 Collector-Emitter Voltage V C E (V) –200 5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150