LAPT
2SA1215
Application : Audio and General Purpose
(Ta=25°C) Ratings –100max –100max –160min 50min∗ –2.0max 50typ 400typ V MHz pF
20.0min 4.0max 2 3 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 B C E 0.65 +0.2 -0.1 3.0 +0.3 -0.1
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2921) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings –160 –160 –5 –15 –4 150(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–160V VEB=–5V IC=–25mA VCE=–4V, IC=–5A IC=–5A, IB=–0.5A VCE=–12V, IE=2A VCB=–10V, f=1MHz
External Dimensions MT-200
36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2
Unit
µA µA
V
a b
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC (V) –60 RL (Ω) 12 IC (A) –5 VB2 (V) 5 IB1 (mA) –500 IB2 (mA) 500 ton (µs) 0.25typ tstg (µs) 0.85typ tf (µs) 0.2typ
Weight : Approx 18.4g a. Part No. b. Lot No.
I C – V CE Characteristics (Typical)
A A A m A 0m 0m 0m 0m 50 –60 –50 –40 –30 –7
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V ) –3
I C – V BE Temperature Characteristics (Typical)
–15 (V C E =–4V)
–16
A
–12 Collector Current I C (A)
–1 50 m A
–10 0mA
Collector Current I C (A)
–200
mA
–2
–10
–8
p)
) emp
eT
˚C (
–4
(Ca
0
0
–1
–2
–3
–4
0
0
–0.2
–0.4
–0.6
–0.8
–1.0
0
0
–1 Base-Emittor Voltage V B E (V)
–30
I B =–20mA
–5A
125
25˚C
˚C (
Cas
I C =–10A
Cas
–50mA
–1
–5
se T
e Te
mp)
em
–2
Collector-Emitter Voltage V C E (V)
Base Current I B (A)
h FE – I C Characteristics (Typical)
(V C E =–4V) 200 DC Curr ent Gain h FE
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V) 200 125˚C DC Curr ent Gain h FE
θ j- a ( ˚C/W)
Transient Thermal Resistance
θ j-a – t Characteristics
2
1
100
Typ
100
25˚C –30˚C
0.5
50
50
10 –0.02
–0.1
–0.5
–1
–5 –10 –15
30 –0.02
–0.1
–0.5
–1
–5
–10 –15
0.1
1
10
100 Time t(ms)
1000 2000
Collector Current I C (A)
Collector Current I C (A)
f T – I E Characteristics (Typical)
(V C E =–12V) 80 –40
Safe Operating Area (Single Pulse)
160
P c – T a Derating
60 Collector Curr ent I C (A)
Ty p
Ma xim um Powe r Dissipat io n P C (W)
10
Cut- off F req uency f T ( MH Z )
m s
–10
D C
120
W ith In
–5
fin ite
40
80
he at si nk
–1 –0.5 Without Heatsink Natural Cooling
20
40
Without Heatsink 0 0.02 0.1 1 10 –0.2 –2 –10 –100 –200 5 0 0 25 50 75 100 125 150
Emitter Current I E (A)
Collector-Emitter Voltage V C E (V)
Ambient Temperature Ta(˚C)
12
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