2SA1216_07

LAPT 2SA1216 Application : Audio and General Purpose (Ta=25°C) Ratings –100max –100max –180min 30min∗ –2.0max 40typ 500typ V MHz pF 20.0min 4.0max Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2922) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings –180 –180 –5 –17 –5 200(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sElectrical Characteristics SymboI VCBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–180V VEB=–5V IC=–25mA VCE=–4V, IC=–8A IC=–8A, IB=–0.8A VCE=–12V, IE=2A VCB=–10V, f=1MHz External Dimensions MT-200 36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2 Unit µA µA V a b 2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1 ∗hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) –40 RL (Ω) 4 IC (A) –10 VB2 (V) 5 IB1 (A) –1 IB2 (A) 1 ton (µs) 0.3typ tstg (µs) 0.7typ tf (µs) 0.2typ Weight : Approx 18.4g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) –1. m 00 A V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –3 I C – V BE Temperature Characteristics (Typical) –17 –15 Collector Current I C (A) (V C E =–4V) 5A –1 A 00 m A –17 –15 –5 –7 0 –40 mA –3 00 m A Collector Current I C (A) –2 00 mA –10 –2 eT em p) Tem p) –150mA –10 –100mA –5 ˚C( 125 –50mA C(C 25˚ I C =–10A –5A 0 0 I B =–20mA 0 0 –1 –2 –3 –4 0 –0.2 –0.4 –0.6 –0.8 –1.0 0 –30 –1 ˚C( Cas –5 ase –1 eT emp Cas ) –2 –2.4 Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V) h FE – I C Characteristics (Typical) (V C E =–4V) 300 DC Curr ent Gain h F E h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 DC Cur rent Gain h F E 125˚C 100 25˚C 50 –30˚C θ j-a – t Characteristics θ j - a (˚ C/W) Transient Thermal Resistance 2 1 100 Typ 0.5 50 10 –0.02 –0.1 –0.5 –1 –5 –10 –17 10 –0.02 –0.1 –0.5 –1 Collector Current I C (A) –5 –10 –17 0.1 1 10 100 Time t(ms) 1000 2000 Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =–12V) 60 –50 Safe Operating Area (Single Pulse) 200 P c – T a Derating M aximum Power Dissipa ti on P C (W) 10 m 160 Cu t-off Fre quen cy f T (MH Z ) s W 40 T yp Collect or Cur ren t I C (A) –10 –5 DC ith In fin 120 ite he at si nk 80 20 –1 –0.5 Without Heatsink Natural Cooling 40 Without Heatsink 0 25 50 75 100 125 150 0 0.02 0.1 1 10 –0.2 –2 –10 –100 –300 5 0 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 13