LAPT
2SA1294
Application : Audio and General Purpose
(Ta=25°C) 2SA1294 –100max –100max –230min 50min∗ –2.0max 35typ 500typ V pF
20.0min 4.0max
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3263) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1294 –230 –230 –5 –15 –4 130(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–230V VEB=–5V IC=–25mA VCE=–4V, IC=–5A IC=–5A, IB=–0.5A VCE=–12V, IE=2A VCB=–10V, f=1MHz
External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1
Unit
µA µA
V
19.9±0.3
4.0
a b
ø3.2±0.1
MHz
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
∗hFE Rank O(50 to 100), Y(70 to 140)
5.45±0.1 B C E
sTypical Switching Characteristics (Common Emitter)
VCC (V) –60 RL (Ω) 12 IC (A) –5 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –500 IB2 (mA) 500 ton (µs) 0.35typ tstg (µs) 1.50typ tf (µs) 0.30typ
5.45±0.1
Weight : Approx 6.0g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (sa t) (V )
V CE ( sat ) – I B Characteristics (Typical)
–3
I C – V BE Temperature Characteristics (Typical)
–15 (V C E =–4V)
–3 .0A –2 .0 A
–15
. –1
5A
.0 –1
A
–5 00 mA
Collector Current I C (A)
–30
0m
A
–10
–
Collector Current I C (A)
mA 200
–2
–10
mp ) emp )
seT (Ca
–30
–1 00 mA
eTe
˚C (
125
I B =–20mA
–5A 0 0
0
0
–1
–2
–3
–4
0
–0.5
–1.0
–1.5
–2.0
0
25˚C
–1
˚C (
Cas
–50mA
I C =–10A
Cas
–5
–1
–5
eTe
mp)
–2
–2.5
Collector-Emitter Voltage V C E (V)
Base Current I B (A)
Base-Emittor Voltage V B E (V)
(V C E =–4V) 200 DC C urrent G ain h FE DC C urrent G ain h FE 200 125˚C 100
(V C E =–4V)
θ j- a ( ˚ C/W)
h FE – I C Characteristics (Typical)
h FE – I C Temperature Characteristics (Typical)
θ j-a – t Characteristics
3
Typ
100
25˚C
Transient Thermal Resistance –5 –10 –15
1
50
50
–30˚C
0.5
10 –0.02
–0.1
–0.5
–1
–5 –10 –15
10 –0.02
–0.1
–0.5
–1
0.1
1
10
100 Time t(ms)
1000 2000
Collector Current I C (A)
Collector Current I C (A)
f T – I E Characteristics (Typical)
(V C E =–12V) 60 –40
Safe Operating Area (Single Pulse)
130
10 m s
P c – T a Derating
Cut-o ff F requ ency f T (MH Z )
–10 Collector Curr ent I C (A)
DC
Ma ximum Po we r Dissipa ti on P C (W)
100
W ith
40
Ty
–5
In
p
fin ite he at si
–1 –0.5 Without Heatsink Natural Cooling –0.1
nk
50
20
Without Heatsink –10 –100 –300 3.5 0 0 25 50 75 100 125 150
0 0.02
0.1
1
10
–0.05 –3
Emitter Current I E (A)
Collector-Emitter Voltage V C E (V)
Ambient Temperature Ta(˚C)
15
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