2SA1295_07

LAPT sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings –230 –230 –5 –17 –5 200(Tc=25°C) 150 –55 to +150 2SA1295 Application : Audio and General (Ta=25°C) Ratings –100max –100max –230min 50min∗ –2.0max 35typ 500typ V MHz pF 20.0min 4.0max 2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264) (Ta=25°C) Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–230V VEB=–5V IC=–25mA VCE=–4V, IC=–5A IC=–5A, IB=–0.5A VCE=–12V, IE=2A VCB=–10V, f=1MHz External Dimensions MT-200 36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2 Unit µA µA V a b ∗hFE Rank O(50 to 100), Y(70 to 140) sTypical Switching Characteristics (Common Emitter) VCC (V) –60 RL (Ω) 12 IC (A) –5 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –500 IB2 (mA) 500 ton (µs) 0.35typ tstg (µs) 1.50typ tf (µs) 0.30typ Weight : Approx 18.4g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) –17 A –3 . –2 V CE ( sat ) – I B Characteristics (Typical) –3 I C – V BE Temperature Characteristics (Typical) (V C E =–4V) –17 –15 Collector Current I C (A) .0 0A .5 –1 A – –15 A 1.0 0 –50 mA Collector Current I C (A) –30 –10 0mA –2 –200 mA –10 p) eT em –1 00 mA –5 –50mA I B =–20mA 0 –5A 0 0 0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 –2.0 0 –0.8 –30 ˚C ( Cas I C =–10A –5 125 ˚C ( Cas 25˚C –1 e Te mp) –1.6 –2.4 –3.2 Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V) (V C E =–4V) 200 DC Cur rent Gain h F E DC Cur rent Gain h FE 200 125˚C 100 (V C E =–4V) θ j- a ( ˚C/W) h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 2 Typ 100 25˚C Transient Thermal Resistance 1 50 50 –30˚C 0.5 10 –0.02 –0.1 –0.5 –1 –5 –10 –17 10 –0.02 –0.1 –0.5 –1 –5 –10 –17 0.1 1 10 100 Time t(ms) 1000 2000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =–12V) 60 –40 Safe Operating Area (Single Pulse) 200 10 m s P c – T a Derating –10 Cu t-of f Fr eque ncy f T ( MH Z ) Collect or Cur ren t I C (A) –5 D M aximum Power Dissipa ti on P C (W) C 160 W ith 40 In Ty p fin 120 ite he at –1 –0.5 Without Heatsink Natural Cooling –0.1 si nk 80 20 40 Without Heatsink 0 25 50 75 100 125 150 0 0.02 0.1 1 10 –0.05 –3 –10 –100 –300 5 0 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 16