2SA1386_07

LAPT 2SA1386/1386A Application : Audio and General Purpose External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A) sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 2SA1386 2SA1386A –160 –160 –5 –15 –4 130(Tc=25°C) 150 –55 to +150 –180 –180 Unit V V V A A W °C °C IEBO V(BR)CEO hFE VCE(sat) fT COB Symbol ICBO VCB= VEB=–5V IC=–25mA VCE=–4V, IC=–5A IC=–5A, IB=–0.5A VCE=–12V, IE=2A VCB=–10V, f=1MHz Conditions (Ta=25°C) Ratings Unit 2SA1386A 2SA1386 –100max –160 –160min –100max –180 –100max –180min 50min∗ –2.0max 40typ 500typ V MHz pF µA µA V 20.0min 4.0max 19.9±0.3 V 4.0 a b ø3.2±0.1 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) –40 RL (Ω) 4 IC (A) –10 VBB1 (V) –10 VBB2 (V) 5 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) IB1 (A) –1 IB2 (A) 1 ton (µs) 0.3typ tstg (µs) 0.7typ tf (µs) 0.2typ 5.45±0.1 B C E 5.45±0.1 Weight : Approx 6.0g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –15 –5 m 00 V CE ( sa t ) – I B Characteristics (Typical) –3 I C – V BE Temperature Characteristics (Typical) –15 (V C E =–4V) A A –7 00 – 0 40 m m A –3 00 m A Collector Current I C (A) –200mA –10 Collector Current I C (A) –2 –10 –150mA p) –100mA –5 mp) e Te eT Cas –1 –5 (Cas ˚C ( –50mA 25˚C I B =–20mA –5A 0 0 0 0 –1 –2 –3 –4 0 –0.2 –0.4 –0.6 –0.8 –1.0 0 125 I C =–10A –30˚C –1 Base-Emittor Voltage V B E (V) (Cas e Te mp) em –2 Collector-Emitter Voltage V C E (V) Base Current I B (A) h FE – I C Characteristics (Typical) (V C E =–4V) 300 DC Curr ent Gain h FE h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 DC Curr ent Gain h FE θ j - a (˚C /W ) θ j-a – t Characteristics 3 125˚C 100 25˚C –30˚C 50 Transient Thermal Resistance –5 –10 –15 1 0.5 100 Typ 10 –0.02 –0.1 –0.5 –1 –5 –10 –15 20 –0.02 –0.1 –0.5 –1 0.1 1 10 100 Time t(ms) 1000 2000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =–12V) 60 –40 Safe Operating Area (Single Pulse) 130 10 ms P c – T a Derating –10 Cut-o ff Fr eque ncy f T (MH Z ) Ty p DC Ma xim um Powe r Dissipation P C ( W) 100 W 40 Collecto r Cur ren t I C ( A) –5 ith In fin ite he at –1 –0.5 Without Heatsink Natural Cooling 1.2SA1386 2.2SA1386A –0.1 1 2 –200 si nk 50 20 0 0.02 0.1 1 10 –0.05 –3 –10 –50 –100 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 18