2SA1492

2SA1492 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3856) sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1492 –180 –180 –6 –15 –4 130(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) 2SA1492 –100max –100max –180min 50min∗ –2.0max 20typ 500typ V pF 20.0min 4.0max sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–180V VEB=–6V IC=–50mA VCE=–4V, IC=–3A IC=–5A, IB=–0.5A VCE=–12V, IE=0.5A VCB=–10V, f=1MHz External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 Unit µA µA V 19.9±0.3 4.0 a b ø3.2±0.1 MHz 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 5.45±0.1 B C E sTypical Switching Characteristics (Common Emitter) VCC (V) –40 RL (Ω) 4 IC (A) –10 VBB1 (V) –10 VBB2 (V) 5 IB1 (A) –1 IB2 (A) 1 ton (µs) 0.6typ tstg (µs) 0.9typ tf (µs) 0.2typ 5.45±0.1 Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) –15 –1 V CE ( sat ) – I B Characteristics (Typical) –3 I C – V BE Temperature Characteristics (Typical) –15 (V C E =–4V) –0. 6A A –0. 4A Collector Current I C (A) – 0 .2 –10 A Collector Current I C (A) –2 –10 –0 .1 A mp) Temp ) Cas (Case 25˚C ˚C ( I B =–20mA I C =–10A –5A 0 0 –0.5 –1.0 –1.5 –2.0 0 0 0 0 –1 –2 –3 –4 –30˚C 125 (Case –5 –50mA –1 –5 e Te –1 Base-Emittor Voltage V B E (V) Temp) –2 Collector-Emitter Voltage V C E (V) Base Current I B (A) (V C E =–4V) 300 DC Curr ent Gain h FE DC Curr ent Gain h FE 200 25˚C 100 –30˚C (V C E =–4V) 125˚C θ j - a (˚C/W) h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 3 Typ 100 50 Transient Thermal Resistance 1 0.5 50 10 –0.02 –0.1 –0.5 –1 –5 –10 –15 20 –0.02 –0.1 –0.5 –1 –5 –10 –15 0.1 1 10 100 Time t(ms) 1000 2000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =–12V) 30 –40 Safe Operating Area (Single Pulse) 130 3m P c – T a Derating Cut- off F re quen cy f T (MH Z ) –10 Collector Cur rent I C (A) 10 m s s 0m M aximum Power Dissipa ti on P C ( W) 10 Typ 20 s 100 W ith –5 D In C fin ite he at si nk –1 –0.5 50 10 Without Heatsink Natural Cooling 0 0.02 0.1 1 10 –0.1 –3 –10 –100 –200 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 20