2SA1493

2SA1493 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3857) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1493 –200 –200 –6 –15 –5 150(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) 2SA1493 –100max –100max –200min 50min∗ – 3.0max 20typ 400typ V MHz pF 20.0min 4.0max sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–200V VEB=–6V IC=–50mA VCE=–4V, IC=–5A IC=–10A, IB=–1A VCE=–12V, IE=0.5A VCB=–10V, f=1MHz External Dimensions MT-200 36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2 Unit µA µA V a b 2 3 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 B C E 0.65 +0.2 -0.1 3.0 +0.3 -0.1 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) –60 RL (Ω) 12 IC (A) –5 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –500 IB2 (mA) 500 ton (µs) 0.3typ tstg (µs) 0.9typ tf (µs) 0.2typ Weight : Approx 18.4g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –15 5A –1. V CE ( sa t ) – I B Characteristics (Typical) –3 I C – V BE Temperature Characteristics (Typical) –15 (V C E =–4V) –1 A – 0 60 mA –400 mA Collector Current I C (A) –200m A –10 –1 00 mA Collector Current I C (A) –2 –10 eTe mp) Temp ) I B =–5 0m A –5 ˚C ( I C =–15A –10A –5A 0 0 –1 –2 –3 –4 0 0 25˚C 0 0 –1 –2 –3 –4 –30˚C 125 (CaseT Cas (Case –1 –5 –1 Base-Emittor Voltage V B E (V) emp) –2 Collector-Emi tter Voltage V C E (V) Base Current I B (A) h FE – I C Characteristics (Typical) (V C E =–4V) 300 DC C urrent G ain h FE h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 DC C urrent G ain h FE 125˚C 25˚C 100 –30˚C θ j- a (˚C /W ) θ j-a – t Characteristics 2 Typ 100 50 Transient Thermal Resistance 1 0.5 50 10 –0.02 –0.1 –0.5 –1 –5 –10 –15 20 –0.02 –0.1 –0.5 –1 –5 –10 –15 0.1 1 10 100 Time t(ms) 1000 2000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =–12V) 30 –50 Safe Operating Area (Single Pulse) 160 3m P c – T a Derating 20 Typ Cut- off F re quen cy f T ( MH Z ) Co lle ctor Cu rr ent I C ( A) –10 –5 D C 10 Maximu m Power Dissip ation P C (W) m s 0m s 10ms 120 W 20 s ith In fin ite he 80 at si nk –1 –0.5 Without Heatsink Natural Cooling 10 40 0 0.02 –0.1 0.1 1 Emitter Current I E (A) 10 –2 –10 –100 –300 Collector-Emitter Voltage V C E (V) 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 21