2SA1494

2SA1494 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3858) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1494 –200 –200 –6 –17 –5 200(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) 2SA1494 –100max –100max –200min 50min∗ –2.5max 20typ 500typ V MHz pF 20.0min 4.0max 2 3 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 B C E 0.65 +0.2 -0.1 3.0 +0.3 -0.1 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–200V VEB=–6V IC=–50mA VCE=–4V, IC=–8A IC=–10A, IB=–1A VCE=–12V, IE=1A VCB=–10V, f=1MHz External Dimensions MT-200 36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2 Unit µA µA V a b ∗hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) –40 RL (Ω) 4 IC (A) –10 VBB1 (V) –10 VBB2 (V) 5 IB1 (A) –1 IB2 (A) 1 ton (µs) 0.6typ tstg (µs) 0.9typ tf (µs) 0.2typ Weight : Approx 18.4g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) –17 A .5 –1 V CE ( sat ) – I B Characteristics (Typical) –3 Collector-Emitter Saturation Voltage V C E (s at) (V ) I C – V BE Temperature Characteristics (Typical) –17 –15 Collector Current I C (A) (V C E =–4V) –1A –60 –15 0 mA –40 Collector Current I C (A) 0mA –200m A –2 –10 –1 00 m A –10 e Te mp) Temp ) (Case 25˚C –5 –50mA I C =–15A –10A –5A 0 0 –1 –2 –3 –5 125˚C I B =–20mA 0 0 –1 –2 –3 –4 0 0 –30˚C –1 Base-Emittor Voltage V B E (V) (Case (Cas –1 Temp ) –2 Collector-Emitter Voltage V C E (V) Base Current I B (A) h FE – I C Characteristics (Typical) (V C E =–4V) 300 DC Curr ent Gain h FE h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 125˚C DC Curr ent Gain h FE θ j-a – t Characteristics θ j - a (˚C /W) Transient Thermal Resistance 2 Typ 100 50 25˚C 100 –30˚C 1 0.5 50 10 –0.02 –0.1 –0.5 –1 –5 –10 –17 20 –0.02 –0.1 –0.5 –1 –5 –10 –17 0.1 1 10 100 Time t(ms) 1000 2000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =–12V) 30 –50 Safe Operating Area (Single Pulse) 200 20 m 3m P c – T a Derating Ma xim um Powe r Dissipat io n P C (W) s s 10ms Cut- off Fr equ ency f T (MH Z ) Typ Collector Curr ent I C (A) 20 160 10 0m –10 –5 W D ith s C In fin 120 ite he at si nk 10 –1 –0.5 Without Heatsink Natural Cooling 80 40 Without Heatsink 0 25 50 75 100 125 150 0 0.02 –0.1 0.1 1 Emitter Current I E (A) 10 –2 –10 –100 –300 Collector-Emitter Voltage V C E (V) 5 0 Ambient Temperature Ta(˚C) 22