2SA1667/1668
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4381/4382) sAbsolute maximum ratings (Ta=25°C)
Ratings Symbol 2SA1667 2SA1668 VCBO –150 –200 VCEO VEBO IC IB PC Tj Tstg –150 –6 –2 –1 25(Tc=25°C) 150 –55 to +150 –200 Unit V V V A A W °C °C IEBO V(BR)CEO hFE VCE(sat) fT COB
Application : TV Vertical Output, Audio Output Driver and General Purpose
(Ta=25°C)
sElectrical Characteristics
Symbol ICBO VCB= VEB=–6V IC=–25mA VCE=–10V, IC=–0.7A IC=–0.7A, IB=–0.07A VCE=–12V, IE=0.2A VCB=–10V, f=1MHz Conditions
External Dimensions FM20 (TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
Ratings 2SA1667 2SA1668 –10max –150 –150min –10max –200 –10max –200min 60min
Unit
µA
V
µA
V V MHz pF
16.9±0.3
8.4±0.2
13.0min
–1.0max 20typ 60typ
1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2
sTypical Switching Characteristics (Common Emitter)
VCC (V) –20 RL (Ω) 20 IC (A) –1 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –100 IB2 (mA) 100 ton (µs) 0.4typ tstg (µs) 1.5typ tf (µs) 0.5typ
2.54
3.9 BCE
±0.2
0.8±0.2
a b
ø3.3±0.2
Weight : Approx 2.0g a. Part No. b. Lot No.
I C – V CE Characteristics (Typical)
–2.0 Collector-Emitter Saturation Voltage V C E (s at) (V )
V CE ( sa t ) – I B Characteristics (Typical)
–3
I C – V BE Temperature Characteristics (Typical)
(V C E =–10V) –2
–5
–1.6 Collector Current I C (A)
0m
A
–2
Collector Current I C (A)
–1.6
–1.2
–1.2
mp)
(Cas
–0.8
I B =–5mA/Step
–0.8
Temp (Case 25˚C
e Te
–1
125˚C
–0.4
I C =–2A
–0 .5A
–1A
–0.4
0
0
–2
–4
–6
–8
–10
0
–2
–10
–100
–1000
0
0
–0.2
–0.4
–0.6
–0.8
–30˚C
(Case
Temp)
)
–1.0
–1.2
Collector-Emitter Voltage V C E (V)
Base Current I B (mA)
Base-Emittor Voltage V B E (V)
h FE – I C Characteristics (Typical)
(V C E =–10V) 400 D C Cur r ent Gai n h F E
h FE – I C Temperature Characteristics (Typical)
(V C E =–10V) 400 125˚C D C Cur r ent Gai n h F E 25˚C
θ j-a – t Characteristics
θ j- a (˚C /W )
Transient Thermal Resistance 5
Typ
100
–30˚C
100
1
40 –0.01
–0.1 Collector Current I C (A)
–1
–2
30 –0.01
–0.1 Collector Current I C (A)
–1
–2
0.5
1
10 Time t(ms)
100
1000
f T – I E Characteristics (Typical)
50 (V C E =–12V) –5
Safe Operating Area (Single Pulse)
25
1m 5m s
20 ms
P c – T a Derating
Natural Cooling Silicone Grease Heatsink: Aluminum in mm
M aximu m Power Dissipat io n P C (W)
s
Cut- off Fr equ ency f T (M H Z )
40 Collector Curr ent I C (A)
Typ
30
–1
D
20
C
W ith In
150x150x2
1 00x 1 0 10
0x
fin ite he
20
–0.1 Without Heatsink Natural Cooling 1.2SA1667 2.2SA1668
1 2
2
at si nk
50x50x2
10
Without Heatsink 2 0
0 0.01
0.1 Emitter Current I E (A)
1
2
–0.01 –1
–10
–100
–300
0
25
50
75
100
125
150
Collector-Emitter Voltage V C E (V)
Ambient Temperature Ta(˚C)
25
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