2SA1694_07

2SA1694 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4467) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings –120 –120 –6 –8 –3 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) Ratings –10max –10max –120min 50min∗ –1.5max 20typ 300typ V MHz pF 20.0min 4.0max 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 1.4 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–120V VEB=–6V IC=–50mA VCE=–4V, IC=–3A IC=–3A, IB=–0.3A VCE=–12V, IE=0.5A VCB=–10V, f=1MHz External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 Unit µA µA 19.9±0.3 V 4.0 a b ø3.2±0.1 2 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) –40 RL (Ω) 10 IC (A) –4 VBB1 (V) –10 VBB2 (V) 5 IB1 (A) –0.4 IB2 (A) 0.4 ton (µs) 0.14typ tstg (µs) 1.40typ tf (µs) 0.21typ Weight : Approx 6.0g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) –8 50 V CE ( s a t ) – I B Characteristics (Typical) –3 Collector-Emitter Saturation Voltage V C E (s at) (V ) I C – V BE Temperature Characteristics (Typical) –8 (V CE =–4V) –3 –2 0 0m m A –1 5 A 0m –100 mA A Collector Current I C (A) –6 –7 5m A Collector Current I C (A) –6 –2 –50mA –4 –4 mp) e Te mp) e Te (Cas –25mA Cas –1 I C =–8A –4A –2A 0 0 –0.1 –0.2 –0.3 –0.4 –0.5 –0.6 –0.7 –0.8 –0.9 –1.0 Base Current I B (A) 0 0 –1 –2 –3 –4 0 0 –0.5 –30˚C 25˚C 125 I B =–10mA ˚C ( –2 –2 (Cas –1.0 e Te mp) –1.5 Collector-Emitter Voltage V C E (V) Base-Emittor Voltage V B E (V) h FE – I C Characteristics (Typical) (V C E =–4V) 200 D C Cur r ent Gai n h F E h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 300 DC Curr ent Gain h FE θ j-a – t Characteristics θ j - a ( ˚ C/W) Transient Thermal Resistance 3 Typ 100 125˚C 25˚C 100 –30˚C 1 50 50 0.5 30 –0.02 –0.1 –0.5 –1 –5 –8 30 –0.02 –0.1 –0.5 –1 –5 –8 0.3 1 10 Time t(ms) 100 1000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =–12V) 30 –20 Safe Operating Area (Single Pulse) 80 10 m s P c – T a Derating Typ 20 Co lle ctor Cu rren t I C (A) –5 DC Maxim um Power Dissip ation P C (W) –10 Cut- off F req uency f T (MH Z ) 100ms 60 W ith In fin ite he 40 at si –1 nk 10 –0.5 Without Heatsink Natural Cooling 20 Without Heatsink 0 0.02 0.05 0.1 0.5 1 5 8 –0.1 –5 –10 –50 –100 –200 3.5 0 0 25 50 75 100 12 5 150 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 28