2SA1695

2SA1695 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4468) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1695 –140 –140 –6 –10 –4 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) 2SA1695 –10max –10max –140min 50min∗ –0.5max 20typ 400typ V MHz pF 20.0min 4.0max 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 1.4 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–140V VEB=–6V IC=–50mA VCE=–4V, IC=–3A IC=–5A, IB=–0.5A VCE=–12V, IE=0.5A VCB=–10V, f=1MHz External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 Unit µA µA 19.9±0.3 V 4.0 a b ø3.2±0.1 2 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) –60 RL (Ω) 12 IC (A) –5 VBB1 (V) –10 VBB2 (V) 5 IB1 (A) –0.5 IB2 (A) 0.5 ton (µs) 0.17typ tstg (µs) 1.86typ tf (µs) 0.27typ Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) –10 –4 00 mA V CE ( sat ) – I B Characteristics (Typical) –3 Collector-Emitter Saturation Voltage V C E (s at) (V ) I C – V BE Temperature Characteristics (Typical) –10 (V C E =–4V) –3 0 A 0m –2 0 A 0m –15 0m A Collector Current I C (A) –100 mA –7 5m A –2 –6 Collector Current I C (A) –8 –8 –6 –50mA –4 –25mA mp) e Te –30˚C Tem (Ca se –1 I B =–10mA –5A 0 0 –0.5 –1.0 –1.5 –2.0 0 0 0 0 –1 –2 –3 –4 25˚C 125 I C =–10A –2 ˚C –2 (Case (Cas Temp –4 p) –1 Base-Emittor Voltage V B E (V) ) –1.5 Collector-Emitter Voltage V C E (V) Base Current I B (A) (V C E =–4V) 200 DC Curr ent Gain h F E 200 125˚C (V C E =–4V) θ j- a ( ˚C/W) h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 3 25˚C 100 –30˚C 100 Transient Thermal Resistance Typ DC Curr ent Gain h F E 1 0.5 50 50 30 –0.02 –0.1 –0.5 –1 –5 –10 30 –0.02 –0.1 –0.5 –1 –5 –10 0.1 1 10 100 Time t(ms) 1000 2000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =–12V) 30 –30 Safe Operating Area (Single Pulse) 100 P c – T a Derating –10 Cut-o ff F requ ency f T (MH Z ) 10 0m Maximu m Power Diss ip ation P C (W) W Co lle ctor Cu rren t I C ( A) 20 –5 DC ith 3m s In Typ fin s ite he 50 10 ms at si nk –1 –0.5 Without Heatsink Natural Cooling 10 0 0.02 0.1 1 10 –0.1 –3 –5 –10 –50 –100 –200 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 29