2SA1725

2SA1725 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4511) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1725 –80 –80 –6 –6 –3 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) 2SA1725 –10max –10max –80min 50min∗ –0.5max 20typ 150typ V MHz pF 13.0min sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–80V VEB=–6V IC=–25mA VCE=–4V, IC=–2A IC=–2A, IB=–0.2A VCE=–12V, IE=0.5A VCB=–10V, f=1MHz External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 Unit µA 16.9±0.3 V 8.4±0.2 µA 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) –30 RL (Ω) 10 IC (A) –3 VBB1 (V) –10 VBB2 (V) 5 IB1 (A) –0.3 IB2 (A) 0.3 ton (µs) 0.18typ tstg (µs) 1.10typ tf (µs) 0.21typ 2.54 3.9 BCE ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –6 –2 m 00 A – 0 15 mA V CE ( s a t ) – I B Characteristics (Typical) –3 I C – V BE Temperature Characteristics (Typical) –6 (V CE =–4V) –1 00 m A –5 Collector Current I C (A) –8 0m A Collector Current I C (A) –4 –50mA –2 –4 –3 –30mA p) Tem se (Ca se T –2 –1 I C =–6A –4A –2A 0 0 –0.5 –1.0 –1.5 –2 ˚C I B =–10mA –1 125 (Ca 0 0 –1 –2 –3 –4 0 0 –0.5 –30˚C 25˚C (Cas –1 e Te –20mA emp mp) ) –1.5 Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V) (V C E =–4V) 300 D C Cur r ent Gai n h F E DC C urrent G ain h FE 300 125˚C 25˚C 100 –30˚C (V C E =–4V) θ j- a ( ˚C/W) h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 5 Typ 100 Transient Thermal Resistance 1 50 50 30 –0.02 –0.1 –0.5 –1 –5 –6 30 –0.02 0.5 0.4 1 10 100 Time t(ms) 1000 2000 –0.1 –0.5 –1 –5 –6 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =–12V) 30 –20 –10 Safe Operating Area (Single Pulse) 30 P c – T a Derating Typ Cut -off Fre quen cy f T ( MH Z ) –5 20 Collecto r Cur ren t I C (A) 100ms DC m s M aximum Po wer Dissipat io n P C (W) 10 W ith 20 In fin ite he –1 –0.5 at si nk 10 10 Without Heatsink Natural Cooling –0.1 0 0.02 –0.05 –3 Without Heatsink 2 –5 –10 –50 –100 0 0.05 0.1 0.5 1 56 0 25 50 75 100 125 150 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 30