2SA1746_07

LOW VCE (sat) Silicon PNP Epitaxial Planar Transistor sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings –70 –50 –6 –12(Pulse–20) –4 60(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SA1746 Application : Chopper Regulator, Switch and General Purpose (Ta=25°C) Ratings –10max –10max –50min 50min –0.5max –1.2max 25typ 400typ V V 16.2 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–70V VEB=–6V IC=–25mA VCE=–1V, IC=–5A IC=–5A, IB=–80mA IC=–5A, IB=–80mA VCE=–12V, IE=1A VCB=–10V, f=1MHz External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 Unit µA 23.0±0.3 V 9.5±0.2 µA a b MHz pF 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1 3.3 0.8 sTypical Switching Characteristics (Common Emitter) VCC (V) –20 RL (Ω) 4 IC (A) –5 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –80 IB2 (mA) 80 ton (µs) 0.5typ tstg (µs) 0.6typ tf (µs) 0.3typ 3.35 B C E Weight : Approx 6.5g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) –12 V CE ( sat ) – I B Characteristics (Typical) –1.5 I C – V BE Temperature Characteristics (Typical) –12 (V C E =–1V) –12mA –100 mA –10 –70mA –10 Collector Current I C (A) Collector Current I C (A) –8 –50mA –1.0 –8 p) em –6 –30m A –6 emp ) (Ca seT –2 I B =–10mA –3A –1A 0 –3 –10 –5A –2 0 0 –1 –2 –3 –4 –5 –6 –100 Base Current I B (mA) –1000 0 0 –0.5 –30˚C I C =–10A 25˚C 125 –1.0 (Cas ˚C –4 –0.5 –4 (Ca eTe mp) seT Collector-Emitter Voltage V C E (V) Base-Emittor Voltage V B E (V) (V C E =–1V) 500 D C Cur r ent Gai n h F E 500 D C Cur r ent Gai n h F E (V C E =–1V) θ j - a (˚ C/W) h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 4 Typ 25˚C –30˚C Transient Thermal Resistance 125˚C 1 100 100 0.5 50 –0.03 –0.1 –0.5 –1 –5 –10 50 –0.03 –0.1 –0.5 –1 –5 –10 0.2 1 10 100 Time t(ms) 3.0 –1.5 1000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) 40 (V C E =–12V) –30 Safe Operating Area (Single Pulse) 60 10 0µ P c – T a Derating Cu t-of f Fr eque ncy f T (MH Z ) 30 –10 Typ Maxim um Power Dissip ation P C (W) 1m s 10 m s s Collector Curre nt I C (A) 40 W –5 ith In fin 20 ite he at si 20 nk 10 –1 Without Heatsink Natural Cooling –0.3 –3 Without Heatsink 0 0.1 1 Emitter C urrent I E (A) 10 –10 –50 –100 3.5 0 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 32