2SA1860_07

LAPT 2SA1860 Application : Audio and General Purpose (Ta=25°C) Ratings –100max –100max –150min 50min∗ –2.0max 50typ 400typ V MHz 16.2 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4886) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings –150 –150 –5 –14 –3 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–150V VEB=–5V IC=–25mA VCE=–4V, IC=–5A IC=–5A, IB=–500mA VCE=–12V, IE=2A VCB=–10V, f=1MHz External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 Unit µA 23.0±0.3 V 9.5±0.2 µA a b pF 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1 3.3 0.8 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) –60 RL (Ω) 12 IC (A) –5 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –500 IB2 (mA) 500 ton (µs) 0.25typ tstg (µs) 0.85typ tf (µs) 0.2typ 3.35 B C E Weight : Approx 6.5g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) –14 Collector-Emitter Saturation Voltage V C E (s at) (V ) A m mA mA mA 00 500 400 00 – –3 –6 – V CE ( sat ) – I B Characteristics (Typical) –3 I C – V BE Temperature Characteristics (Typical) –14 (V C E =–4V) 00 mA –7 –200 mA Collector Current I C (A) –1 50 m A –10 –100 mA Collector Current I C (A) –10 –2 p) Tem p) se –5 –50mA C (C ˚C 125 0 0 –1 –2 –3 –4 0 0 –0.2 –0.4 –0.6 –0.8 –1.0 0 0 –30 –5A 25˚ I B =–20mA –1 Base-Emittor Voltage V B E (V) ˚C ( Cas I C =–10A (Ca ase eT –1 –5 Tem emp ) Collector-Emitter Voltage V C E (V) Base Current I B (A) (V C E =–4V) 200 DC Cur rent Gain h FE DC Cur rent Gain h FE (V C E =–4V) 200 125˚C θ j- a ( ˚C/W) h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 3 100 Typ Transient Thermal Resistance 100 25˚C –30˚C 1 0.5 50 50 20 –0.02 –0.1 –0.5 –1 –5 –10 –14 30 –0.02 –0.1 –0.5 –1 –5 –10 –14 0.1 1 10 100 Time t(ms) 1000 2000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =–12V) 80 –40 Safe Operating Area (Single Pulse) 80 1m s P c – T a Derating Cu t-off Fre quen cy f T (M H Z ) –10 60 Collect or Cur ren t I C (A) 10 m D C 0m s M aximum Power Dissipa ti on P C (W) 10 s 60 Typ –5 40 40 –1 –0.5 Without Heatsink Natural Cooling –0.1 20 20 Without Heatsink –5 –10 –50 –100 –200 3.5 0 0 25 50 75 100 125 150 0 0.02 0.1 1 10 –0.05 –2 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 34 3.0 –2 W ith In fin ite he at si nk