2SA1907_07

2SA1907 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5099) sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings –80 –80 –6 –6 –3 60(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) Ratings –10max –10max –80min 50min∗ –0.5max 20typ 150typ V MHz 16.2 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–80V VEB=–6V IC=–50mA VCE=–4V, IC=–2A IC=–12A, IB=–0.2A VCE=–12V, IE=0.5A VCB=–10V, f=1MHz External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 Unit µA 23.0±0.3 V 9.5±0.2 µA a b pF 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1 3.3 0.8 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) –30 RL (Ω) 10 IC (A) –3 VBB1 (V) –10 VBB2 (V) 5 IB1 (A) –0.3 IB2 (A) 0.3 ton (µs) 0.18typ tstg (µs) 1.10typ tf (µs) 0.21typ 3.35 B C E Weight : Approx 6.5g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) –6 –2 0 0m m 50 V CE ( sa t ) – I B Characteristics (Typical) –3 Collector-Emitter Saturation Voltage V C E (s at) (V ) I C – V BE Temperature Characteristics (Typical) –6 (V CE =–4V) A –1 A –1 00 m A –5 Collector Current I C (A) –8 0m A Collector Current I C (A) –4 –50mA –2 –4 –3 –30mA p) Tem se (Ca se T –2 –1 I C =–6A –4A –2A 0 0 –0.5 –1.0 –1.5 –2 ˚C I B =–10mA –1 125 (Ca 0 0 –1 –2 –3 –4 0 0 –30˚C 25˚C (Cas –1 Base-Emittor Voltage V B E (V) e Te –20mA emp mp) ) 3.0 –1.5 Collector-Emitter Voltage V C E (V) Base Current I B (A) (V C E =–4V) 300 DC Curr ent Gain h F E DC Cur rent Gain h FE 300 125˚C 25˚C 100 –30˚C (V C E =–4V) θ j- a ( ˚C/W) h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 5 Typ 100 Transient Thermal Resistance 1 50 50 0.5 0.3 30 –0.02 –0.1 –0.5 –1 –5 –6 30 –0.02 –0.1 –0.5 –1 –5 –6 1 10 100 Time t(ms) 1000 2000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =–12V) 30 –20 –10 Safe Operating Area (Single Pulse) 60 P c – T a Derating Typ Cu t-of f Fr eque ncy f T ( MH Z ) Collecto r Cur rent I C ( A) –5 DC 10 10 s 0m ms Ma xim um Powe r Dissipation P C (W) 1m W ith s 20 40 In fin ite he at si nk –1 –0.5 Without Heatsink Natural Cooling 10 20 Without Heatsink 0 0.02 0.05 0.1 0.5 1 56 –0.1 –5 –10 –50 –100 3.5 0 0 25 50 75 100 125 150 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 35