2SA1908_07

2SA1908 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5100) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings –120 –120 –6 –8 –3 75(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) Ratings –10max –10max –120min 50min∗ –0.5max 20typ 300typ V MHz 16.2 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–120V VEB=–6V IC=–50mA VCE=–4V, IC=–3A IC=–3A, IB=–0.3A VCE=–12V, IE=0.5A VCB=–10V, f=1MHz External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 Unit µA 23.0±0.3 V 9.5±0.2 µA a b pF 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1 3.3 0.8 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) –40 RL (Ω) 10 IC (A) –4 VBB1 (V) –10 VBB2 (V) 5 IB1 (A) –0.4 IB2 (A) 0.4 ton (µs) 0.14typ tstg (µs) 1.40typ tf (µs) 0.21typ 3.35 B C E Weight : Approx 6.5g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) –8 –2 m 00 m V CE ( sat ) – I B Characteristics (Typical) –3 Collector-Emitter Saturation Voltage V C E (s at) (V ) I C – V BE Temperature Characteristics (Typical) –8 (V C E =–4V) A –1 50 m 50 A –100 mA –3 A Collector Current I C (A) –6 –7 5m A Collector Current I C (A) –6 –2 –50mA –4 –4 mp) e Te mp) –25mA Cas –1 I C =–8A –4A –2A 0 0 –0.2 –0.4 –0.6 –0.8 –1.0 e Te 0 0 –1 –2 –3 –4 0 0 –0.5 –30˚C 25˚C 125 I B =–10mA ˚C ( –2 –2 (Cas (Cas –1.0 e Te mp) Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V) (V C E =–4V) 200 DC Curr ent Gain h FE DC Curr ent Gain h FE 300 (V C E =–4V) θ j - a (˚C/W) h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 4 100 100 25˚C –30˚C Transient Thermal Resistance Typ 125˚C 1 50 50 0.5 30 –0.02 –0.1 –0.5 –1 –5 –8 30 –0.02 0.2 –0.1 –0.5 –1 –5 –8 Collector Current I C (A) 1 10 100 Time t(ms) 1000 2000 Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =–12V) 30 –20 –10 Safe Operating Area (Single Pulse) 80 10 P c – T a Derating 10 Cut-o ff Fr eque ncy f T ( MH Z ) Typ Collector Curr ent I C (A) 20 0m s –5 DC s Ma xim um Powe r Dissipat io n P C (W) m 60 40 –1 –0.5 Without Heatsink Natural Cooling 10 20 0 0.02 0.05 0.1 0.5 1 5 8 –0.1 –5 –10 –50 –100 –150 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 36 3.0 –1.5 W ith In fin ite he at si nk