2SA1909_07

2SA1909 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5101) sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings –140 –140 –6 –10 –4 80(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) Ratings –10max –10max –140min 50min∗ –0.5max 20typ 400typ V MHz 16.2 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–140V VEB=–6V IC=–50mA VCE=–4V, IC=–3A IC=–5A, IB=–0.5A VCE=–12V, IE=0.5A VCB=–10V, f=1MHz External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 Unit µA 23.0±0.3 V 9.5±0.2 µA a b pF 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1 3.3 0.8 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) –60 RL (Ω) 12 IC (A) –5 VBB1 (V) –10 VBB2 (V) 5 IB1 (A) –0.5 IB2 (A) 0.5 ton (µs) 0.17typ tstg (µs) 1.86typ tf (µs) 0.27typ 3.35 B C E Weight : Approx 6.0g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) –10 –4 m 00 V CE ( sat ) – I B Characteristics (Typical) –3 Collector-Emitter Saturation Voltage V C E (s at) (V) I C – V BE Temperature Characteristics (Typical) –10 (V C E =–4V) A –3 m 00 A –2 m 00 A 0m A –15 Collector Current I C (A) –100 mA –7 5m A –2 –6 Collector Current I C (A) –8 –8 –6 –50mA –4 –25mA mp) Tem (Ca e Te se –1 25˚C 125 I B =–10mA –5A 0 0 –0.5 –1.0 –1.5 –2.0 0 0 0 0 –1 –2 –3 –4 –30˚C I C =–10A –2 ˚C –2 (Case (Cas Temp –4 p) –1 Base-Emittor Voltage V B E (V) ) Collector-Emitter Voltage V C E (V) Base Current I B (A) h FE – I C Characteristics (Typical) (V C E =–4V) 200 DC Curr ent Gain h FE h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 D C Cur r ent Gai n h F E 125˚C 100 25˚C –30˚C 50 θ j - a (˚C /W) θ j-a – t Characteristics 3 Transient Thermal Resistance Typ 100 1 0.5 50 30 –0.02 –0.1 –0.5 –1 –5 –10 20 –0.02 –0.1 –0.5 –1 –5 –10 0.1 1 10 100 Time t(ms) 1000 2000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =–12V) 30 –30 Safe Operating Area (Single Pulse) 80 P c – T a Derating Cu t-of f Fr eque ncy f T (MH Z ) –10 M aximum Po wer Dissipation P C (W) 60 Collector Curr ent I C (A) 20 –5 D Typ C 40 –1 –0.5 Without Heatsink Natural Cooling 10 20 Without Heatsink 0 0.02 0.1 1 10 –0.1 –3 –5 –10 –50 –100 –200 3.5 0 0 25 50 75 100 125 150 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 3.0 –1.5 10 W 10 0m s ms ith In fin ite he at si nk 37