2SB1382

(2 kΩ) (80Ω) E 2SB1382 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2082) VCE=–4V, IC=–8A 2000min V IB –1 A VCE(sat) IC=–8A, IB=–16mA –1.5max PC 75(Tc=25°C) W VBE(sat) IC=–8A, IB=–16mA –2.5max V Tj 150 °C fT VCE=–12V, IE=1A 50typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 350typ pF Tstg 3.3 3.0 V 1.05 +0.2 -0.1 VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –40 5 –8 –10 5 –16 16 0.8typ 1.8typ 1.0typ 0 –1 0 –2 –3 –4 –5 –1 –10 –1 –5 (V C E =–4V) –10 –16 12 Transient Thermal Resistance 10000 5˚C 5000 25 ˚C – ˚C 30 1000 500 –0.3 –0.5 –1 f T – I E Characteristics (Typical) –5 –10 –16 p) Tem se (Ca 10 100 P c – T a Derating m 10 s 0µ s s DC –5 at 40 si nk 16 he 10 ite Without Heatsink Natural Cooling fin –1 –0.5 60 In Co lle ctor Cu rren t I C (A) 1m M aximu m Power Dissipat io n P C (W) 10 5 1000 ith 1 1 W 0.5 ˚C 0.2 Time t(ms) –0.1 Emitter Current I E (A) 125 0.5 80 –10 44 1 –50 –0.05 –0.03 –3 –2.4 3 Safe Operating Area (Single Pulse) 50 –2 θ j-a – t Characteristics (V C E =–12V) Typ 0 0.05 0.1 –1 Collector Current I C (A) Collector Current I C (A) 100 0 Base-Emittor Voltage V B E (V) m R –0.5 N 500 –0.3 ot 1000 0 –100 m D C Cur r ent Gai n h F E Typ 5000 –8 h FE – I C Temperature Characteristics (Typical) ec o D C Cur r ent Gai n h F E –4A 20000 10000 Cut- off F req uency f T (MH Z ) –8A –12 –4 (V C E =–4V) 20000 E (V C E =–4V) Base Current I B (mA) h FE – I C Characteristics (Typical) C ew –1 0 –0.5 –6 Collector-Emitter Voltage V C E (V) Collector Current I C (A) I B =–1.5m A I C =–16A θ j - a ( ˚ C/ W) –10 rN –3m A –2 fo –6 mA Weight : Approx 6.5g a. Part No. b. Lot No. –16 –3 en Collector Current I C (A) –20 B d A –12m de A 3.35 1.5 I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A 0m –4 – m 20 4.4 es ig IC (A) 0.65 +0.2 -0.1 5.45±0.1 D RL (Ω) 0.8 2.15 1.5 VCC (V) –26 1.75 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.3±0.2 a b ) hFE emp A mA –120min mp) –16(Pulse–26) IC –10max VEB=–6V IC=–10mA 3.45 ±0.2 e Te V(BR)CEO 5.5±0.2 (Cas IEBO V 15.6±0.2 –30˚C V –6 µA 0.8±0.2 –120 VEBO –10max 5.5 VCEO VCB=–120V 1.6 ICBO Unit ns V Ratings se T –120 C External Dimensions FM100(TO3PF) (Ta=25°C) Conditions (Ca VCBO Symbol 25˚C Unit 9.5±0.2 ■Electrical Characteristics Ratings Symbol Equivalent circuit Application : Chopper Regulator, DC Motor Driver and General Purpose 23.0±0.3 ■Absolute maximum ratings (Ta=25°C) B 16.2 Darlington 20 Without Heatsink –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 0 50 100 Ambient Temperature Ta(˚C) 150