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2SB1560_07

2SB1560_07

  • 厂商:

    SANKEN(三垦)

  • 封装:

  • 描述:

    2SB1560_07 - Silicon PNP Epitaxial Planar Transistor - Sanken electric

  • 数据手册
  • 价格&库存
2SB1560_07 数据手册
(7 0 Ω ) E Darlington sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings –160 –150 –5 –10 –1 100(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C 2SB1560 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fr COB Conditions VCB=–160V VEB=–5V IC=–30mA VCE=–4V, IC=–7A IC=–7A, IB=–7mA IC=–7A, IB=–7mA VCE=–12V, IE=2A VCB=–10V, f=1MHz Ratings –100max –100max –150min 5000min∗ –2.5max –3.0max 50typ 230typ V V MHz pF 20.0min 4.0max 3 B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) Application : Audio, Series Regulator and General Purpose (Ta=25°C) Unit 5.0±0.2 1.8 External Dimensions MT-100(TO3P) 15.6±0.4 9.6 2.0 4.8±0.2 2.0±0.1 µA µA 19.9±0.3 V 4.0 a b ø3.2±0.1 2 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 1.4 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC (V) –70 RL (Ω) 10 IC (A) –7 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –7 IB2 (mA) 7 ton (µs) 0.8typ tstg (µs) 3.0typ tf (µs) 1.2typ Weight : Approx 6.0g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at ) (V ) mA V CE ( sat ) – I B Characteristics (Typical) –3 I C – V BE Temperature Characteristics (Typical) –10 (V C E =–4V) –10 –2 . A 5m – 2 .0 mA –10 –1 .5m A –1. 2mA Collector Current I C (A) –1.0 mA –2 –6 –0.8m A –0.6m A Collector Current I C (A) –8 –8 –6 –10A –7A I C =–5A –1 mp) e Te I B =–0.4mA Temp (Case 25˚C –4 –4 0 0 –2 –4 –6 0 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 0 –1 –30˚C –2 –2 125˚C (Case (Cas Temp ) ) –2 –2.5 Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V) (V C E =–4V) 40,000 DC Curr ent Gain h F E DC Curr ent Gain h F E 50000 (V C E =–4V) θ j - a ( ˚ C/W) h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 3 Typ Transient Thermal Resistance 125˚C 10000 5000 10,000 5,000 25˚C –30˚C 1 0.5 1000 1,000 –0.2 –0.5 –1 Collector Current I C (A) –5 –10 500 –0.2 –0.5 –1 Collector Current I C (A) –5 –10 0.1 1 5 10 50 100 Time t(ms) 500 1000 2000 f T – I E Characteristics (Typical) (V C E =–12V) 100 –30 Safe Operating Area (Single Pulse) 100 P c – T a Derating 80 Cut- off F req uency f T (M H Z ) Co lle ctor Cu rre nt I C ( A) –10 –5 10 DC 0m m s s Maxim um Power Dissipation P C (W) 10 W ith In fin 60 Typ ite he –1 –0.5 Without Heatsink Natural Cooling –0.1 50 at si nk 40 20 0 0.02 0.05 0.1 0.5 1 5 10 –0.05 –3 –5 –10 –50 –100 –200 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 48
2SB1560_07 价格&库存

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