2SB1626

(7 0 Ω ) E Darlington sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1626 –110 –110 –5 –6 –1 30(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C 2SB1626 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–110V VEB=–5V IC=–30mA VCE=–4V, IC=–5A IC=–5A, IB=–5mA IC=–5A, IB=–5mA VCE=–12V, IE=0.5A VCB=–10V, f=1MHz 2SB1626 –100max –100max –110min 5000min∗ –2.5max –3.0max 100typ 110typ V V 13.0min B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2495) Application : Audio, Series Regulator and General Purpose (Ta=25°C) Unit External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 µA 16.9±0.3 V 8.4±0.2 µA MHz pF 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC (V) –30 RL (Ω) 6 IC (A) –5 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –5 IB2 (mA) 5 ton (µs) 1.1typ tstg (µs) 3.2typ tf (µs) 1.1typ 2.54 3.9 BCE I C – V CE Characteristics (Typical) A m –1 V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –3 I C – V BE Temperature Characteristics (Typical) –6 (V C E =–4V) –6 A –5m –0 . 5m A .4 –0 mA –0 .3 m A Collector Current I C (A) –0. 2m A –4 Collector Current I C (A) –2 –5A –4 Tem (Ca se T se –2 –1 –2 ˚C (Ca 25˚C 125 0 0 –2 –4 –6 0 –0.1 –0.5 –1 –5 –10 –50 –100 0 0 –1 –30 ˚C ( Cas e Te emp ) mp) I B =–0. 1mA I C =–3A p) ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. –2 –3 Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V) (V C E =–4V) 40,000 DC Cur rent Gain h F E DC Cur rent Gain h F E 50000 (V C E =–4V) 125˚C θ j - a ( ˚ C/W) h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 5.0 10,000 5,000 25˚C 10000 5000 –30˚C Transient Thermal Resistance Typ 1.0 1,000 500 200 –0.2 1000 500 0.5 0.3 –0.05 –0.1 –0.5 –1 –5 –6 100 –0.02 –0.05 –0.1 –0.5 –1 –5 –6 1 10 Time t(ms) 100 1000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =–12V) 120 –20 –10 100 Cut-o ff F requ ency f T (MH Z ) Safe Operating Area (Single Pulse) 30 P c – T a Derating Typ –5 Collecto r Cur ren t I C (A) 10 0m 10 s m s M aximu m Power Dissipa tion P C (W) W ith 80 D C 20 In fin ite he 60 at –1 –0.5 Without Heatsink Natural Cooling –0.1 si nk 40 10 20 Without Heatsink 2 0 0 0.02 0.05 0.1 0.5 1 56 –0.05 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 53