(70Ω) E
Darlington
sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1648 –150 –150 –5 –17 –1 200(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C
2SB1648
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–150V VEB=–5V IC=–30mA VCE=–4V, IC=–10A IC=–10A, IB=–10mA IC=–10A, IB=–10mA VCE=–12V, IE=2A VCB=–10V, f=1MHz (Ta=25°C) 2SB1648 –100max –100max –150min 5000min∗ –2.5max –3.0max 45typ 320typ V V
20.0min 4.0max
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561)
Application : Audio, Series Regulator and General Purpose External Dimensions MT-200
36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2
Unit
µA µA
V
a b
MHz pF
2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
sTypical Switching Characteristics (Common Emitter)
VCC (V) –40 RL (Ω) 4 IC (A) –10 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –10 IB2 (mA) 10 ton (µs) 0.7typ tstg (µs) 1.6typ tf (µs) 1.1typ
Weight : Approx 18.4g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
0m A –1
V CE ( sa t ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V) –3
I C – V BE Temperature Characteristics (Typical)
17 15 Collector Current I C (A) (V CE =–4V)
–17
mA
–3mA
–2mA
–15
–50
–1 .5 m A
Collector Current I C (A)
–1.0 mA –0.8 mA
I C =–15A
–10
–0.5mA
5˚C
p) Tem ase
–30 ˚C (
I B =–0.3mA
–5
0
0
–2
–4
–6
0 –0.2
–0.5 –1
–5
–10
–50 –100 –200
0
0
–1
25˚
C (C
5
Cas
–1
I C =–5A
eT
–2
emp
12
)
I C =–1 0A
(Ca
se
10
Te
–2
mp
)
–3
Collector-Emitter Voltage V C E (V)
Base Current I B (mA)
Base-Emittor Voltage V B E (V)
50,000 DC C urrent G ain h FE
(V C E =–4V) 50000 DC C urrent G ain h FE 125˚C 25˚C 10000 5000 –30˚C
(V C E =–4V)
θ j - a (˚C /W )
h FE – I C Characteristics (Typical)
h FE – I C Temperature Characteristics (Typical)
θ j-a – t Characteristics
2
Typ
Transient Thermal Resistance
1
10,000 5,000
0.5
1,000 –0.2
–0.5
–1
–5
–10
–17
1000 –0.2
–0.5
–1
–5
–10
–17
0.1
1
10
100 Time t(ms)
1000 2000
Collector Current I C (A)
Collector Current I C (A)
f T – I E Characteristics (Typical)
(V C E =–12V) 60
Safe Operating Area (Single Pulse)
200
P c – T a Derating
Maxim um Power Dissip ation P C (W)
Cut-o ff F requ ency f T (MH Z )
160
W ith
40
In fin
120
ite he at si nk
80
20
40 Without Heatsink 0 25 50 75 100 12 5 150
0 0.02
0.05 0.1
0.5
1
5
10
5 0
Emitter Current I E (A)
Ambient Temperature Ta(˚C)
55
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