2SC2023

2SC2023 Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC2023 300 300 6 2 0.2 40(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C 2.5 BCE Application : Series Regulator, Switch, and General Purpose (Ta=25°C) 2SC2023 1.0max 1.0max 300min 30min 1.0max 10typ 75typ V pF 12.0min 4.0max sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=300V VEB=6V IC=25mA VCE=4V, IC=0.5A IC=1.0A, IB=0.2A VCE=12A, IE=–0.2A VCB=10V, f=1MHz External Dimensions MT-25(TO220) 3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1 Unit mA mA V 16.0±0.7 8.8±0.2 a b ø3.75±0.2 MHz 1.35 0.65 +0.2 -0.1 2.5 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 100 RL (Ω) 100 IC (A) 1.0 VB2 (V) –5 IB1 (mA) 100 IB2 (mA) –200 ton (µs) 0.3typ tstg (µs) 4.0typ tf (µs) 1.0typ Weight : Approx 2.6g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 2 IB 0m =20 A V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E(s a t) (V ) 3 I C – V BE Temperature Characteristics (Typical) 2 (V CE =4V) Collector Current I C (A) 2 Collector Current I C (A) mp) e Te I 25˚C (C 125˚C 1 (Cas A /s to p B =2 0m I C =1A 0 0 0.1 0.2 2A 0.3 0 0 0.2 0.4 0.6 0.8 1.0 0 0 1 2 3 4 Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V) (V C E =4V) 200 DC Cur rent Gain h F E DC Cur rent Gain h F E 200 (V C E =4V) θ j - a (˚C /W) h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 5 100 Typ 100 125 25˚C 50 50 –30 ˚C Transient Thermal Resistance ˚C 1 0.5 10 3 10 100 Collector Current I C (mA) 1000 2000 10 3 5 10 50 100 500 1000 2000 0.2 –30˚C (C ase Tem ase Te p) 1 1 mp) 1 10 100 Time t(ms) 1000 2000 Collector Current I C (mA) f T – I E Characteristics (Typical) (V C E =12V) 20 10 5 Cut-o ff F reque ncy f T (MH Z ) Safe Operating Area (Single Pulse) 40 P c – T a Derating Natural Cooling Silicone Grease Heatsink: Aluminum in mm 30 Typ Collector Curre nt I C (A) D C Ma ximum Po we r Dissipa ti on P C ( W) 1m s 5m s 20 ms W ith 1 0.5 In fin ite he 10 20 150x150x2 100x100x2 10 50x50x2 Without Heatsink at si nk 0.1 0.05 Without Heatsink Natural Cooling 0 –0.003 0.02 –0.01 –0.05 –0.1 Emitter Current I E (A) –0.5 –1 2 10 100 500 Collector-Emitter Voltage V C E (V) 2 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 58