2SC2922

LAPT 2SC2922 Application : Audio and General Purpose (Ta=25°C) 2SC2922 100max 100max 180min 30min∗ 2.0max 50typ 250typ V MHz pF 20.0min 4.0max Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC2922 180 180 5 17 5 200(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=180V VEB=5V IC=25mA VCE=4V, IC=8V IC=8A, IB=0.8A VCE=12V, IE=–2A VCB=10V, f=1MHz External Dimensions MT-200 36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2 Unit µA µA V a b 2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1 ∗hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) 40 RL (Ω) 4 IC (A) 10 VB2 (V) –5 IB1 (A) 1 IB2 (A) –1 ton (µs) 0.2typ tstg (µs) 1.3typ tf (µs) 0.45typ Weight : Approx 18.4g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 1.5 1A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E(s a t) (V ) 3 I C – V BE Temperature Characteristics (Typical) 17 15 (V C E =4V) 17 A 70 0m A 600 15 mA mA 500 A 400m 300 mA A Collector Current I C (A) 200m 2 Collector Current I C (A) 10 10 em p) as (C 5˚C 100 mA 1 ˚C 0 0 1 2 3 4 0 0 0.2 0.4 0.6 0.8 1.0 0 0 25 1 Base-Emittor Voltage V B E (V) –30 I B =20mA ˚C 12 5A (Ca 50mA se 5 5 Tem eT I C =10A p) 2 2.4 Collector-Emitter Voltage V C E (V) Base Current I B (A) (V C E =4V) 200 DC C urrent G ain h FE DC Cur rent Gain h F E 200 125˚C 100 25˚C 50 –30˚C (V C E =4V) θ j - a (˚C /W) h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 2 Transient Thermal Resistance 100 1 Typ 50 0.5 10 0.02 0.1 0.5 1 5 10 17 10 0.02 0.1 0.5 1 5 10 17 0.1 1 10 100 Time t(ms) 1000 2000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =12V) 80 50 Safe Operating Area (Single Pulse) 200 P c – T a Derating Maxim um Power Di ssip ation P C (W) 10 m s Cut -off Fre quency f T ( MH Z ) 160 60 Collector Cur rent I C (A) Typ 10 5 DC W ith In fin 120 ite he 40 at si nk 80 1 0.5 Without Heatsink Natural Cooling 20 40 Without Heatsink 0 25 50 75 100 125 150 0 –0.02 0.2 –0.1 –1 –5 –10 2 10 100 300 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) 5 0 Ambient Temperature Ta(˚C) 61