2SC3179

2SC3179 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1262) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3179 80 60 6 4 1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2.5 BCE Application : Audio and General Purpose (Ta=25°C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=80V VEB=6V IC=25mA VCE=4V, IC=1V IC=2A, IB=0.2A VCE=12V, IE=–0.2A VCB=10V, f=1MHz 100max 100max 60min 40min 0.6max 15typ 60typ External Dimensions MT-25(TO220) 3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1 2SC3179 Unit µA µA V V pF 12.0min 16.0±0.7 8.8±0.2 a b ø3.75±0.2 4.0max MHz 1.35 0.65 +0.2 -0.1 2.5 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 20 RL (Ω) 10 IC (A) 2 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 200 IB2 (mA) –200 ton (µs) 0.2typ tstg (µs) 1.9typ tf (µs) 0.29typ Weight : Approx 2.6g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) 4 00 m A 80m A V CE ( sa t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical) 4 (V CE =4V) IB =1 60mA Collector Current I C (A) 40mA 30mA 2 20mA Collector Current I C (A) 3 1.0 3 2 p) em ) mp Te se C( eT (C 12 25˚ I C =1 A 0 0 1 2 3 4 0 0.005 0.01 0.05 0.1 0.5 1 0 0.4 0.6 0.8 –30 ˚C 2A 5˚C 1 10mA 1 (Ca Ca 3A as se Te 0.5 mp ) 1.0 1.2 Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V) (V C E =4V) 500 D C Cur r ent Gai n h F E DC C urrent G ain h FE 200 125˚C 100 25˚C –30˚C 50 (V C E =4V) θ j- a ( ˚C/W) Transient Thermal Resistance h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 5 Typ 100 50 1 20 0.01 0.1 0.5 1 4 20 0.02 0.1 0.5 1 4 0.5 1 10 Time t(ms) 100 1000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) 40 (V C E =12V) 10 Safe Operating Area (Single Pulse) 30 1m P c – T a Derating 5 Cut- off F req uency f T (M H Z ) 30 Co lle ctor Cu rren t I C ( A) D C Maximu m Power Di ssip ation P C (W) 10 m 10 0m s s s W ith 20 In fin ite he 20 Typ at si nk 1 10 10 0.5 Without Heatsink Natural Cooling Without Heatsink 2 0 –0.005 –0.01 0.2 –0.1 –0.5 –1 –4 3 10 50 100 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 62