LAPT
2SC3263
Application : Audio and General Purpose
(Ta=25°C) Ratings 100max 100max 230min 50min∗ 2.0max 60typ 250typ V pF
20.0min 4.0max
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1294) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 230 230 5 15 4 130(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=230V VEB=5V IC=25mA VCE=4V, IC=5A IC=5A, IB=0.5A VCE=12V, IE=–2A VCB=10V, f=1MHz
External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1
Unit
µA µA
19.9±0.3
4.0
V
a b
ø3.2±0.1
MHz
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
∗hFE Rank O(50 to 100), Y(70 to 140)
sTypical Switching Characteristics (Common Emitter)
VCC (V) 60 RL (Ω) 12 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 500 IB2 (mA) –500 ton (µs) 0.30typ tstg (µs) 2.40typ tf (µs) 0.50typ
5.45±0.1 B C E
5.45±0.1
Weight : Approx 6.0g a. Part No. b. Lot No.
I C – V CE Characteristics (Typical)
0A 3.
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V ) 3
I C – V BE Temperature Characteristics (Typical)
15 (V C E =4V)
15
2.
0A
1.
5A
1.0
A
600 mA
Collector Current I C (A)
10
200m A
2
Collector Current I C (A)
400
mA
10
eT em p Tem ) p)
10 0m A
5
1
as
se
(C
Ca
5˚C
C(
25˚
5A 0 0
0
0
1
2
3
4
0
0.5
1.0
1.5
2.0
0
–30
I B =20mA
12
˚C
1 Base-Emittor Voltage V B E (V)
(Ca
se
50mA
I C =10A
5
Tem
p)
2
Collector-Emitter Voltage V C E (V)
Base Current I B (A)
(V C E =4V) 200 DC Curr ent Gain h F E DC C urrent G ain h FE 200 125˚C 100 100
(V C E =4V)
θ j - a (˚ C/W)
h FE – I C Characteristics (Typical)
h FE – I C Temperature Characteristics (Typical)
θ j-a – t Characteristics
3
Typ
25˚C –30˚C
Transient Thermal Resistance
1 0.5
50
50
10 0.02
0.1
0.5
1
5
10 15
10 0.02
0.1
0.5
1
5
10 15
0.1
1
10
100 Time t(ms)
1000 2000
Collector Current I C (A)
Collector Current I C (A)
f T – I E Characteristics (Typical)
(V C E =12V) 100 40
Safe Operating Area (Single Pulse)
130
P c – T a Derating
10
80 Cut- off F req uenc y f T (MH Z ) 10
m
Maxim um Power Dissip ation P C (W)
s
100
W
Typ
60
Collector Curr ent I C (A)
DC
ith
5
In fin ite he at si nk
40
1 0.5 Without Heatsink Natural Cooling
50
20
Without Heatsink 0 –0.02 0.1 –0.1 –1 –10 3 10 100 300 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) 3.5 0 0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
64
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