2SC3264

2SC3264 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295) ■Electrical Characteristics Symbol V ICBO Ratings Unit VCB=230V 100max µA VEB=5V 100max µA IC=25mA 230min V 24.4±0.2 VCEO 230 V IEBO VEBO 5 V V(BR)CEO IC 17 A hFE VCE=4V, IC=5A 50min∗ IB 5 A VCE(sat) IC=5A, IB=0.5A 2.0max V PC 200(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz Tj 150 °C COB VCB=10V, f=1MHz 250typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), Y(70 to 140) 21.4±0.3 7 9 a b 2 3 IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 60 12 5 10 –5 0.5 –0.5 0.30typ 2.40typ 0.50typ 50mA I B =20mA 0 1 2 3 I C =10A 0 0 0.5 1.0 1.5 m m h FE – I C Temperature Characteristics (Typical) (V C E =4V) 10 0.02 0.5 100 25˚C –30˚C 50 10 1 5 10 17 0.02 N 0.1 125˚C Transient Thermal Resistance ot R 50 DC Curr ent Gain h FE ec o 200 Typ 0 1 Collector Current I C (A) 0.1 0.5 3 1 5 10 17 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 Base-Emittor Voltage V B E (V) (V C E =4V) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 40 200 10 80 3 10 100 Collector-Emitter Voltage V C E (V) 300 Co lle ctor Cu rren t I C ( A) nk Emitter Current I E (A) –10 si –1 at 0.1 –0.1 he 0 –0.02 120 ite Without Heatsink Natural Cooling fin 0.5 20 In 1 ith 40 5 160 W Typ s DC 10 60 m Ma xim um Powe r Dissipat io n P C (W) 100 Cut-o ff Fr eque ncy f T ( MH Z ) DC Curr ent Gain h FE 0 2.0 Base Current I B (A) h FE – I C Characteristics (Typical) 100 p) 5A 4 Collector-Emitter Voltage V C E (V) 200 5 en 0 1 10 em 10 0m A 5 2 eT A 200m Cas A 25˚C 400m 10 15 ˚C ( A θ j- a ( ˚C/W) Collector Current I C (A) 600m 125 A (V C E =4V) 17 ew 1.0 15 3 Collector Current I C (A) A rN 1.5 fo 0A Weight : Approx 18.4g a. Part No. b. Lot No. I C – V BE Temperature Characteristics (Typical) d 2. de A Collector-Emitter Saturation Voltage V C E (s at) (V ) 0 3. E D RL (Ω) C es ig B V CE ( sat ) – I B Characteristics (Typical) 3.0 +0.3 -0.1 5.45±0.1 ns 5.45±0.1 VCC (V) 17 0.65 +0.2 -0.1 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 2.1 2-ø3.2±0.1 20.0min Tstg 6.0±0.2 36.4±0.3 mp) 230 VCBO External Dimensions MT-200 (Ta=25°C) Conditions e Te Unit (Cas Ratings –30˚C ■Absolute maximum ratings (Ta=25°C) Symbol Application : Audio and General Purpose 4.0max LAPT 80 40 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 65