LAPT
2SC3264
Application : Audio and General Purpose
(Ta=25°C) Ratings 100max 100max 230min 50min∗ 2.0max 60typ 250typ V MHz pF
20.0min 4.0max
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 230 230 5 17 5 200(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=230V VEB=5V IC=25mA VCE=4V, IC=5A IC=5A, IB=0.5A VCE=12V, IE=–2A VCB=10V, f=1MHz
External Dimensions MT-200
36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2
Unit
µA µA
V
a b
2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1
∗hFE Rank O(50 to 100), Y(70 to 140)
sTypical Switching Characteristics (Common Emitter)
VCC (V) 60 RL (Ω) 12 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.5 IB2 (A) –0.5 ton (µs) 0.30typ tstg (µs) 2.40typ tf (µs) 0.50typ
Weight : Approx 18.4g a. Part No. b. Lot No.
I C – V CE Characteristics (Typical)
0 3. A
2. 0A
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V ) 3
I C – V BE Temperature Characteristics (Typical)
(V C E =4V) 17 15
17
1.5 A
1.0 A
A
15
Collector Current I C (A)
400m
10
A
2
Collector Current I C (A)
600m
A 200m
10
p) em
10 0m A
˚C (
50mA
I B =20mA
0
5A 0 0
0
1
2
3
4
0
0.5
1.0
1.5
2.0
0
25˚C
–30˚C
125
1
(Cas
5
I C =10A
5
Cas
1
e Te
eT
mp)
2
3
Collector-Emitter Voltage V C E (V)
Base Current I B (A)
Base-Emittor Voltage V B E (V)
(V C E =4V) 200 DC Curr ent Gain h FE DC Curr ent Gain h FE 200 125˚C 100 100 50
(V C E =4V)
θ j- a ( ˚C/W)
h FE – I C Characteristics (Typical)
h FE – I C Temperature Characteristics (Typical)
θ j-a – t Characteristics
3
Typ
50
25˚C –30˚C
Transient Thermal Resistance
1 0.5
10 10 0.02 0.1 0.5 1 5 10 17 0.02 0.1 0.5 1 5 10 17
0 .1
1
10
100 Time t(ms)
1000 2000
Collector Current I C (A)
Collector Current I C (A)
f T – I E Characteristics (Typical)
(V C E =12V) 100 40
Safe Operating Area (Single Pulse)
200
10 m
P c – T a Derating
80 Cut-o ff Fr eque ncy f T ( MH Z )
Ma xim um Powe r Dissipat io n P C (W)
s
10
DC
160
W ith
Typ
60
Co lle ctor Cu rren t I C ( A)
5
In fin
120
ite he at si nk
40
1 0.5 Without Heatsink Natural Cooling
80
20
40
0 –0.02
0.1 –0.1 –1 –10 3 10 100 300 Emitter Current I E (A) Collector-Emitter Voltage V C E (V)
5 0
Without Heatsink 0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
65
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