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2SC3284_07

2SC3284_07

  • 厂商:

    SANKEN(三垦)

  • 封装:

  • 描述:

    2SC3284_07 - Silicon NPN Epitaxial Planar Transistor - Sanken electric

  • 数据手册
  • 价格&库存
2SC3284_07 数据手册
LAPT sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 150 150 5 14 3 125(Tc=25°C) 150 –55 to +150 2SC3284 Application : Audio and General Purpose (Ta=25°C) Ratings 100max 100max 150min 50min∗ 2.0max 60typ 200typ V pF 20.0min 4.0max Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303) (Ta=25°C) Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=150V VEB=5V IC=25mA VCE=4V, IC=5A IC=5A, IB=0.5A VCE=12V, IE=–2A VCB=10V, f=1MHz External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 Unit µA µA 19.9±0.3 4.0 V a b ø3.2±0.1 MHz 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) 60 RL (Ω) 12 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.5 IB2 (A) –0.5 ton (µs) 0.2typ tstg (µs) 1.5typ tf (µs) 0.35typ 5.45±0.1 B C E 5.45±0.1 Weight : Approx 6.0g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) 0m 400 mA 3 A 00m V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) 14 (V C E =4V) 14 A 0m 60 mA 00 5 12 75 A 200m Collector Current I C (A) A Collector Current I C (A) 15 0m A 10 2 8 10 0m A em as 12 ˚C 5A 0 0 0 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1.0 0 –30 25 1 Base-Emittor Voltage V B E (V) ˚C I B =20mA 5˚C I C =10A (Ca (C se 4 eT 1 Tem 50mA 5 p) p) 2 Collector-Emitter Voltage V C E (V) Base Current I B (A) (V C E =4V) 200 DC Curr ent Gain h F E DC Cur rent Gain h FE 200 125˚C 100 100 (V C E =4V) θ j- a ( ˚C/W) h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 3 Transient Thermal Resistance Typ 25˚C –30˚C 1 0.5 50 50 20 0.02 0.1 0.5 1 5 10 14 20 0.02 0.1 0.5 1 5 10 14 0.1 1 10 100 Time t(ms) 1000 2000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =12V) 80 40 Safe Operating Area (Single Pulse) 130 1m 10 P c – T a Derating s Cut-o ff F requ ency f T (MH Z ) Typ 60 Collector Curre nt I C ( A) 10 5 10 s 0m Maxim um Power Dissip ation P C (W) m D s 100 W ith C In fin ite he 40 at si nk 50 1 0.5 Without Heatsink Natural Cooling 20 0 –0.02 –0.1 –1 –10 0.2 3 10 100 200 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 66
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