2SC3519

LAPT 2SC3519/3519A Application : Audio and General Purpose (Ta=25°C) 2SC3519 2SC3519A Unit Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A) sAbsolute maximum ratings (Ta=25°C) Symbol 2SC3519 2SC3519A VCBO VCEO VEBO IC IB PC Tj Tstg 160 160 5 15 4 130(Tc=25°C) 150 –55 to +150 180 180 Unit V V V A A W °C °C IEBO V(BR)CEO hFE VCE(sat) fT COB VEB=5V IC=25mA VCE=4V, IC=5A IC=5A, IB=0.5A VCE=12V, IE=–2A VCB=10V, f=1MHz sElectrical Characteristics Symbol ICBO VCB= 160 160min Conditions External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 100max 180 100max 180min 50min∗ 50typ 250typ µA V 19.9±0.3 4.0 µA V V MHz pF a b ø3.2±0.1 20.0min 4.0max 2.0max 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 5.45±0.1 B C E 5.45±0.1 sTypical Switching Characteristics (Common Emitter) VCC (V) 40 RL (Ω) 4 IC (A) 10 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 1 IB2 (A) –1 ton (µs) 0.2typ tstg (µs) 1.3typ tf (µs) 0.45typ Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 0m 0 60 m A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) 3 I C – V BE Temperature Characteristics (Typical) 15 (V C E =4V) 15 A 70 500 mA 400 mA 300 mA Collector Current I C (A) 10 2 Collector Current I C (A) 200m A 10 10 0m A p) em eT as 50mA (C 12 ˚C 0 0 1 2 3 4 0 0 0.2 0.4 0.6 0.8 1.0 0 0 –30 25 1 Base-Emittor Voltage V B E (V) ˚C I B =20mA 5A 5˚ (Ca C se Te 5 1 5 mp I C =10A ) 2 Collector-Emitter Voltage V C E (V) Base Current I B (A) (V C E =4V) 300 DC Curr ent Gain h F E DC Cur rent Gain h FE 300 (V C E =4V) θ j- a ( ˚C/W) h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 3 125˚C 100 25˚C 50 –30˚C 100 Transient Thermal Resistance 1 0.5 Typ 50 10 0.02 0.1 0.5 1 5 10 15 10 0.02 0.1 0.5 1 5 10 15 0.1 1 10 100 Time t(ms) 1000 2000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =12V) 80 40 Safe Operating Area (Single Pulse) 130 10 ms P c – T a Derating 10 Cut-o ff F reque ncy f T (MH Z ) 60 Co lle ctor Cu rre nt I C (A) M aximum Power Dissipa ti on P C (W) Typ 5 DC 100 W ith In fin ite he 40 at 1 0.5 Without Heatsink Natural Cooling 1.2SC3519 2.2SC3519A 0.1 1 2 200 si nk 50 20 Without Heatsink 3.5 0 0 25 50 75 100 125 150 0 –0.02 –0.1 –1 –5 –10 0.05 5 10 50 100 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 66