2SC3852_07

High hFE LOW VCE (sat) Silicon NPN Epitaxial Planar Transistor sAbsolute maximum ratings (Ta=25°C) Ratings Symbol 2SC3852 2SC3852A VCBO VCEO VEBO IC IB PC Tj Tstg 80 60 6 3 1 25(Tc=25°C) 150 –55 to +150 100 80 Unit V V V A A W °C °C IEBO V(BR)CEO hFE VCE(sat) fT COB 2SC3852/3852A Application : Driver for Solenoid and Motor, Series Regulator and General Purpose (Ta=25°C) Ratings 2SC3852 2SC3852A 10max 80 100max 60min 500min 13.0min sElectrical Characteristics Symbol ICBO VCB= VEB=6V IC=25mA VCE=4V, IC=0.5A IC=2A, IB=50mA VCE=12V, IE=–0.2A VCB=10V, f=1MHz Conditions External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 Unit µA µA 16.9±0.3 100 80min V V V MHz pF 8.4±0.2 0.5max 15typ 50typ 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 2.54 sTypical Switching Characteristics (Common Emitter) VCC (V) 20 RL (Ω) 20 IC (A) 1.0 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 15 IB2 (mA) –30 ton (µs) 0.8typ tstg (µs) 3.0typ tf (µs) 1.2typ 3.9 BCE I C – V CE Characteristics (Typical) 3 IB =1 2m V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) 1.0 I C – V BE Temperature Characteristics (Typical) (V CE =4V) 3 A 8mA Collector Current I C (A) 5mA 2 3mA 2mA 1.0 Collector Current I C (A) 2 p) em ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. mp) e Te (Cas Cas 0.5mA 2A I C =1A 0 0.001 0 0 0 1 2 3 4 5 6 0.005 0.01 0.05 0.1 0.5 1 0 –30˚C 3A 25˚C 125 1mA ˚C ( 1 0.5 1 (Case Temp eT ) 0.5 Base-Emittor Voltage V B E (V) 1.0 1.1 Collector-Emitter Voltage V C E (V) Base Current I B (A) (V C E =4V) 2000 D C Cur r ent Gai n h F E 2000 D C Cur r ent Gai n h F E (V C E =4V) θ j - a ( ˚C/W) Transient Thermal Resistance h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 5 125˚C 25 ˚C 1000 Typ 1000 500 500 – 3 0 ˚C 1 V CB =10V I E =–2A 1 10 Time t(ms) 100 1000 100 0.01 0.1 0.5 1 3 100 0.01 0.1 0.5 1 3 0.5 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) 30 (V C E =12V) 10 Safe Operating Area (Single Pulse) 30 1m P c – T a Derating Cu t-of f Fr eque ncy f T (MH Z ) 10 m 0m s Collecto r Curr ent I C (A) s Maxim um Power Dissipatio n P C ( W) 5 10 s W 20 DC 20 ith In Typ fin 1 0.5 ite he at si nk 10 10 Without Heatsink Natural Cooling 0.1 Without Heatsink 3 5 50 100 0 0 –0.005 –0.01 0.05 –0.05 –0.1 –0.5 –1 –2 10 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) 0 50 100 150 Ambient Temperature Ta(˚C) 78