2SC3856_07

2SC3856 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 200 180 6 15 4 130(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=3A IC=5A, IB=0.5A VCE=12V, IE=–0.5A VCB=10V, f=1MHz 100max 100max 180min External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 Ratings Unit µA µA 19.9±0.3 4.0 V V pF 50min∗ 2.0max 20typ 300typ MHz a b ø3.2±0.1 20.0min 4.0max 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) 40 RL (Ω) 4 IC (A) 10 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 1 IB2 (A) –1 ton (µs) 0.5typ tstg (µs) 1.8typ tf (µs) 0.6typ 5.45±0.1 B C E 5.45±0.1 Weight : Approx 6.0g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) 1A m 00 A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) 15 (V C E =4V) 15 7 0 50 mA 300m A Collector Current I C (A) Collector Current I C (A) 20 0m A 10 100 mA 2 10 mp) e Te Cas ˚C ( 25˚C I B =20mA I C =10A 5A 0 0 0.5 1.0 Base Current I B (A) 1.5 2.0 0 0 0 0 1 2 3 4 –30˚C 125 (Case 5 50mA 1 5 (Cas e Te 1 Base-Emittor Voltage V B E (V) Temp) mp) 2 Collector-Emitter Voltage V C E (V) (V C E =4V) 300 D C Cur r ent Gai n h F E DC C urrent G ain h FE 200 125˚C 100 25˚C (V C E =4V) θ j- a ( ˚C/W) h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 3 Transient Thermal Resistance 1 0.5 100 Typ 50 50 –30˚C 20 0.02 0.1 0.5 1 5 10 15 20 0.02 0.1 0.5 1 5 10 15 0.1 1 10 100 Time t(ms) 1000 2000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =12V) 30 40 Safe Operating Area (Single Pulse) 10 3m P c – T a Derating 130 0m Cut -off Fre quen cy f T ( MH Z ) 10 20 Collecto r Cur ren t I C (A) D C s Maxim um Power Dissi pation P C (W) Typ 10 m s s 100 W ith In 5 fin ite he at si nk 1 0.5 50 10 Without Heatsink Natural Cooling Without Heatsink 0 –0.02 –0.1 –1 Emitter Current I E (A) –10 0.1 3 10 100 200 3.5 0 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 79