2SC3857

2SC3857 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1493) ■Electrical Characteristics Ratings Unit ICBO VCB=200V 100max µA V IEBO VEB=6V 100max µA IC=50mA 200min V 200 24.4±0.2 6 V V(BR)CEO IC 15 A hFE VCE=4V, IC=5A 50min∗ IB 5 A VCE(sat) IC=10A, IB=1A 3.0max V VCE=12V, IE=–0.5A 20typ MHz VCB=10V, f=1MHz 250typ pF 150(Tc=25°C) W Tj 150 °C COB –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 21.4±0.3 a b 2 3 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 60 12 5 10 –5 0.5 –0.5 0.3typ 2.4typ 0.4typ 1 0 2 3 0 1 2 3 m m h FE – I C Temperature Characteristics (Typical) 5 25˚C 100 –30˚C 50 20 0.02 10 15 Collector Current I C (A) 0.1 0.5 5 10 15 D p) Tem 1 10 10ms s Collector-Emitter Voltage V C E (V) 300 nk 100 si 10 80 at 2 he Without Heatsink Natural Cooling ite 0.5 fin 1 120 In 5 ith Co lle ctor Cu rre nt I C ( A) m s 0.1 –10 1000 W 10 10 C 3m s 20 100 P c – T a Derating 0m Typ Emitter Current I E (A) 0.1 Time t(ms) 10 30 –1 0.5 160 20 80 1 1 50 40 2 2 Safe Operating Area (Single Pulse) (V C E =12V) –0.1 1 Collector Current I C (A) f T – I E Characteristics (Typical) 0 –0.02 0 θ j-a – t Characteristics Maxim um Power Dissi pation P C (W) 1 Transient Thermal Resistance R ot 0.5 125˚C N 0.1 DC C urrent G ain h FE ec o Typ Cu t-off Fre quen cy f T ( MH Z ) DC C urrent G ain h FE (V C E =4V) 300 20 0.02 0 4 Base-Emittor Voltage V B E (V) (V C E =4V) 50 se 5A 0 Base Current I B (A) h FE – I C Characteristics (Typical) 100 (Ca I C =15A 10A 4 Collector-Emitter Voltage V C E (V) 300 5 ˚C 1 10 en 0 I B =50mA θ j- a ( ˚C/W) 5 2 125 10 0m A ew 20 0m A 10 (V CE =4V) 15 3 Collector Current I C (A) A rN 400m Weight : Approx 18.4g a. Part No. b. Lot No. I C – V BE Temperature Characteristics (Typical) fo mA d 0 60 de 1A Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) 1. 5A 15 E es ig IC (A) C D RL (Ω) V CE ( sat ) – I B Characteristics (Typical) 3.0 +0.3 -0.1 5.45±0.1 B VCC (V) I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 1.05 +0.2 -0.1 ns Tstg 20.0min PC 9 7 VEBO fT 2.1 2-ø3.2±0.1 ) VCEO 6.0±0.2 36.4±0.3 Temp V (Case 200 –30˚C Unit VCBO Symbol External Dimensions MT-200 (Ta=25°C) Conditions Ratings 25˚C Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 40 5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2000