2SC3857_07

2SC3857 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1493) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 200 200 6 15 5 150(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=5A IC=10A, IB=1A VCE=12V, IE=–0.5A VCB=10V, f=1MHz Ratings 100max 100max 200min External Dimensions MT-200 36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2 Unit µA µA V a b 50min∗ 3.0max 20typ 250typ V MHz pF 20.0min 4.0max 2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) 60 RL (Ω) 12 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.5 IB2 (A) –0.5 ton (µs) 0.3typ tstg (µs) 2.4typ tf (µs) 0.4typ Weight : Approx 18.4g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) 1. 1A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) 15 (V CE =4V) 5A 15 0 60 mA 400m A Collector Current I C (A) Collector Current I C (A) 20 0m A 10 2 10 10 0m A p) Tem se ˚C I C =15A 10A 5A 0 0 1 2 Base Current I B (A) 3 4 0 0 0 0 1 2 3 4 25˚C –30˚C 125 (Case 5 I B =50mA 1 5 (Ca 1 Base-Emittor Voltage V B E (V) Temp ) 2 Collector-Emitter Voltage V C E (V) (V C E =4V) 300 DC C urrent G ain h FE DC C urrent G ain h FE 300 (V C E =4V) θ j- a ( ˚C/W) h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 2 Transient Thermal Resistance 125˚C 1 Typ 100 100 25˚C 0.5 50 50 –30˚C 20 0.02 0.1 0.5 1 5 10 15 20 0.02 0.1 0.5 1 5 10 15 0.1 1 10 100 Time t(ms) 1000 2000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =12V) 40 50 Safe Operating Area (Single Pulse) 160 20 P c – T a Derating 3m m s s Cu t-off Fre quen cy f T ( MH Z ) 30 Co lle ctor Cu rre nt I C ( A) D 10 5 C Maxim um Power Dissi pation P C (W) 10ms 120 10 0m W ith Typ s In fin ite he 20 80 at si nk 1 0.5 Without Heatsink Natural Cooling 10 40 0 –0.02 0.1 –0.1 –1 Emitter Current I E (A) –10 2 10 100 300 Collector-Emitter Voltage V C E (V) 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 80