2SC4138_07

2SC4138 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 500 400 10 10(Pulse20) 4 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=6A IC=6A, IB=1.2A IC=6A, IB=1.2A VCE=12V, IE=–0.7A VCB=10V, f=1MHz 100max 100max 400min (Ta=25°C) Ratings Unit µA µA 19.9±0.3 4.0 V V MHz pF 10 to 30 0.5max 1.3max 10typ 85typ V a b ø3.2±0.1 20.0min 4.0max 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 33.3 IC (A) 6 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.6 IB2 (A) –1.2 ton (µs) 1max tstg (µs) 3max tf (µs) 0.5max 5.45±0.1 B C E 5.45±0.1 Weight : Approx 2.0g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) 10 1.2 A 1A V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 1.4 (I C /I B =5) I C – V BE Temperature Characteristics (Typical) 10 (V C E =4V) 8 Collector Current I C (A) 600 mA 8 1 Collector Current I C (A) 6 400mA 6 mp ) V B E (sat) emp se T –55˚C ) (Cas e Te mp) (Ca ˚C se 4 200m A 4 Te 2 2 V C E (sat) 0 0.02 0.05 0.1 0.5 1 5 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0 1 2 3 4 Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V) (V C E =4V) 100 10 θ j- a ( ˚C/W) h FE – I C Characteristics (Typical) t o n• t s tg • t f ( µ s) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics 3 DC Cur rent Gain h FE 50 125˚C 25˚C –55˚C V C C 2 00V I C :I B1 :–I B 2 =10:1:2 1 0.5 tf 0.1 0.1 0.5 1 5 10 t on Transient Thermal Resistance 5 t s tg Switching Ti me 1 10 0.5 5 0.02 0.05 0.1 0.5 1 5 10 0.3 1 10 Time t(ms) 25˚C 125 I B =100m A (Ca 100 1000 Collector Current I C (A) Collector Current I C (A) Safe Operating Area (Single Pulse) 30 1m Reverse Bias Safe Operating Area 30 80 P c – T a Derating 10 s 0µ 10 Collecto r Curr ent I C (A) Collecto r Cur ren t I C (A) 5 10 5 Maxim um Power Dissi pation P C (W) s 60 W ith In fin ite he 40 at si nk 1 0.5 1 0.5 Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% Without Heatsink Natural Cooling 20 0.1 5 10 50 100 500 Collector-Emitter Voltage V C E (V) 0.1 5 10 50 100 500 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 91