2SC4139

2SC4139 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4139 500 400 10 15(Pulse30) 5 120(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=8A IC=8A, IB=1.6A IC=8A, IB=1.6A VCE=12V, IE=–1.5A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 85typ (Ta=25°C) 2SC4139 Unit µA µA V V MHz pF 20.0min 19.9±0.3 4.0 a b ø3.2±0.1 4.0max V 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 25 IC (A) 8 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.8 IB2 (A) –1.6 ton (µs) 1max tstg (µs) 3max tf (µs) 0.5max 5.45±0.1 B C E 5.45±0.1 Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 15 1. 5A V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) (I C /I B =5) 1.5 I C – V BE Temperature Characteristics (Typical) 10 (V C E =4V) 1 .2 A 800 mA Collector Current I C (A) 600mA 8 V B E (sat) 1.0 –55˚C (Cas ase 25˚C (C 125˚C 10 e Temp) Temp) Temp ) em p) ˚C eT Collector Current I C (A) 6 mp) 400m A Temp (Case 25˚C ) 25 125 as ˚C ( 5 I B =100mA 12 5˚ C ( 2 5 –5 ˚C V C E (sat) 0 0.03 0.05 0.1 0.5 1 5 0 0 1 2 3 4 10 20 0 0 0.2 0.4 0.6 0.8 –55˚C C (Case 200mA 0.5 Cas (Case 4 Temp) e Te 1.0 1.2 Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V) (V C E =4V) 50 8 θ j- a (˚ C/W) h FE – I C Characteristics (Typical) 125˚C DC C urrent G ain h FE t on •t stg • t f – I C Characteristics (Typical) t o n• t s t g• t f ( µ s) 5 t s tg V C C 2 00V I C :I B 1 :I B2 =10:1:–2 1 0.5 t on θ j-a – t Characteristics 2 25˚C –55˚C Transient Thermal Resistance 1 10 Sw it ching Time 0.5 tf 0.1 0.5 1 5 Collector Current I C (A) 10 15 5 0.02 0.05 0.1 0.5 1 5 10 15 0.1 1 10 Time t(ms) 100 1000 Collector Current I C (A) Safe Operating Area (Single Pulse) 50 50 Reverse Bias Safe Operating Area 120 P c – T a Derating Ma xim um Powe r Dissipat io n P C (W) 10 0µ s 100 W ith Collect or Cur ren t I C (A) Collector Curr ent I C (A) In fin 10 10 ite he at si nk 5 Without Heatsink Natural Cooling 5 Without Heatsink Natural Cooling L=3mH IB2=–1A Duty:less than 1% 50 1 5 10 50 100 500 Collector-Emitter Voltage V C E (V) 1 5 10 50 100 500 3.5 Without Heatsink 0 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 91