2SC4140_01

2SC4140 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 500 400 10 18(Pulse36) 6 130(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=10A IC=10A, IB=2A IC=10A, IB=2A VCE=12V, IE=–2.0A VCB=10V, f=1MHz Ratings 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 165typ (Ta=25°C) Unit µA µA V V MHz pF 20.0min 19.9±0.3 4.0 a b ø3.2±0.1 4.0max V 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 20 IC (A) 10 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 1 IB2 (A) –2 ton (µs) 1max tstg (µs) 3max tf (µs) 0.5max 5.45±0.1 B C E 5.45±0.1 Weight : Approx 6.0g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) 18 16 V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) (I C /I B =5) 1.4 I C – V BE Temperature Characteristics (Typical) 18 16 (V CE =4V) 1 .6 A 1.2 A Collector Current I C (A) 800 mA 1 –55˚C (Case 25˚C (Cas Temp) Collector Current I C (A) V B E (sat) 12 600mA 400m A 12 e Temp) Temp ) mp ) mp) e Te –55˚C Te 8 8 eT em p) 25 ˚C (Ca (Cas 25˚C as I B =100mA 12 5˚ C (C 4 4 V C E (sat) 0 0.02 0.05 0.1 0.5 1 5 – ˚ 55 C 0 0 1 2 3 4 10 18 0 0 0.2 0.4 0.6 125 ˚C 200mA 0.8 (Cas 125˚C se (Case e Te mp) 1.0 1.2 Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V) (V C E =4V) 50 10 θ j - a (˚C /W) h FE – I C Characteristics (Typical) t o n• t s tg • t f ( µ s) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics 2 125˚C DC Cur rent Gain h FE 5 V C C 2 00V I C :I B1 :–I B 2 =10:1:2 Transient Thermal Resistance t s tg 25˚C 1 –55˚C Switching Ti me 1 0.5 t on 0.5 10 tf 0.1 0.2 0.5 1 5 10 18 5 0.02 0.05 0.1 0.5 1 5 10 18 0.1 1 10 Time t(ms) 100 1000 Collector Current I C (A) Collector Current I C (A) Safe Operating Area (Single Pulse) 50 10 ms Reverse Bias Safe Operating Area 50 130 P c – T a Derating 1m 10 s 0µ s 10 Co lle ctor Cu rre nt I C ( A) 5 DC Collecto r Cur rent I C (A) 10 5 Maxim um Power Dissi pation P C (W) 100 W ith In fin ite he at 1 0.5 Without Heatsink Natural Cooling 0.1 0.05 0.03 5 10 50 100 500 1 0.5 Without Heatsink Natural Cooling L=3mH IB2=–0.5A Duty:less than 1% si nk 50 0.1 0.05 0.03 5 10 50 100 500 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 93