2SC4296

2SC4296 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4296 500 400 10 10(Pulse20) 4 75(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=6A IC=6A, IB=1.2A IC=6A, IB=1.2A VCE=12V, IE=–0.7A VCB=10V, f=1MHz (Ta=25°C) 2SC4296 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 85typ V V MHz pF Unit µA V 23.0±0.3 9.5±0.2 µA a b 16.2 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1 3.3 0.8 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 33 IC (A) 6 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.6 IB2 (A) –1.2 ton (µs) 1max tstg (µs) 3max tf (µs) 0.5max 3.35 B C E Weight : Approx 6.5g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 10 1.2 A 1A V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) 1.4 (I C /I B =5) I C – V BE Temperature Characteristics (Typical) 10 (V CE =4V) 8 Collector Current I C (A) 600 mA 8 1 Collector Current I C (A) 6 400mA 6 mp ) V B E (sat) emp ) se T (Ca (Ca 25˚C 125 I B = 100mA 2 2 V C E (sat) 0 0.02 0.05 0.1 0.5 1 5 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0 1 2 3 4 Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V) (V C E =4V) 100 10 θ j - a (˚C/W) h FE – I C Characteristics (Typical) t o n• t s t g• t f ( µ s) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics 3 50 25˚C –55˚C V C C 2 00V I C :I B 1 :–I B2 =10:1:2 1 0.5 tf 0.1 0.1 0.5 1 5 10 t on Transient Thermal Resistance DC C urrent G ain h FE 125˚C 5 t s tg Sw it ching Time 1 10 0.5 5 0.02 0.05 0.1 0.5 1 5 10 0.3 1 10 Time t(ms) 100 –55˚C (Cas ˚C e Te se 4 200m A 4 mp) Te 3.0 1000 Collector Current I C (A) Collector Current I C (A) Safe Operating Area (Single Pulse) 30 1m s Reverse Bias Safe Operating Area 30 80 P c – T a Derating 50 10 m 5 Collect or Cur ren t I C (A) s 5 Collect or Cur re nt I C (A) Ma xim um Powe r Dissipat io n P C (W) 10 10 µs 0µ s 10 60 W ith In fin ite 1 0.5 1 0.5 Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% he 40 at si nk 0.1 0.05 0.02 5 Without Heatsink Natural Cooling 0.1 0.05 0.02 5 20 10 50 100 500 10 50 100 500 3.5 0 Without Heatsink 0 50 100 150 Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 94