2SC4299

2SC4299 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4299 900 800 7 3(Pulse6) 1.5 70(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) 2SC4299 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 50typ V V 16.2 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V, IE=–0.3A VCB=10V, f=1MHz External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 Unit µA 23.0±0.3 V 9.5±0.2 µA a b MHz pF 1.75 2.15 1.05 5.45±0.1 1.5 4.4 +0.2 -0.1 3.3 0.8 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL (Ω) 250 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.15 IB2 (A) –0.5 ton (µs) 1max tstg (µs) 5max tf (µs) 1max 5.45±0.1 1.5 0.65 +0.2 -0.1 3.35 B C E Weight : Approx 6.5g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 3 V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) (I C /I B =5) I C – V BE Temperature Characteristics (Typical) 3 (V C E =4V) 500mA 400mA 300mA 1 p) –55˚C (Case Tem 25˚C (Cas e Temp) Temp) V B E (sat) Collector Current I C (A) Collector Current I C (A) 200mA 2 2 mp) 2 5 Cas eT ˚C e m p) (Cas 125˚C 125˚C –55 ˚C ( V C E (sat) 0 0.02 0.05 0.1 0.5 1 12 5˚C 0 0 1 2 3 4 3 0 0 0.2 0.4 0.6 0.8 –55˚C (C 1 I B =50mA 1 25˚C (C ase Tem ase Te (Case e Te p) 100mA mp) 1.0 Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V) (V C E =4V) 50 125˚C DC C urrent G ain h FE 25˚C 8 θ j- a ( ˚C/W) h FE – I C Characteristics (Typical) t o n• t s t g• t f ( µ s) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics 3 5 t s tg VCC 250V IC:IB1:–IB2 =2:0.3:1 Const. 1 0.5 t on 0.2 0.1 0.5 1 3 Transient Thermal Resistance –55˚C Sw it ching Time 1 tf 10 0.5 5 0.01 0.05 0.1 0.5 1 3 0.3 1 10 Time t(ms) 100 3.0 1.2 1000 Collector Current I C (A) Collector Current I C (A) Safe Operating Area (Single Pulse) 10 10 Reverse Bias Safe Operating Area 70 P c – T a Derating 10 0µ s Ma xim um Powe r Dissipat io n P C (W) 5 5 60 W Collector Cur rent I C (A) Collecto r Cur rent I C (A) 50 ith In fin ite 40 he 1 1 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% at si nk 30 0.5 Without Heatsink Natural Cooling 0.5 20 10 Without Heatsink 3.5 0 0.1 50 100 500 1000 0.1 50 100 500 1000 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 97