2SC4300

2SC4300 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30 IB 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.5A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 75typ pF ø3.3±0.2 a b 3.3 3.0 V 1.75 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 250 125 2 10 –5 0.3 –1 1max 5max 1max V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I B =100mA 1 1 2 3 ew –55˚C (Case Temp) 25˚C (Case Temp) e Temp) 125˚C (Cas V C E (sat) 0 0.03 0.05 4 0.1 0.5 Collector-Emitter Voltage V C E (V) C 125˚C ( as e 1 5 0 10 m m t on •t stg • t f – I C Characteristics (Typical) 0.1 0.5 1 5 VCC 250V IC:IB1:–IB2 =2:0.3:1 Const. 1 tf 0.5 t on 0.2 0.1 0.5 20 20 10 10 1 10 Co lle ctor Cu rren t I C ( A) p) 80 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% 100 500 Collector-Emitter Voltage V C E (V) 1000 60 40 nk 0.01 50 P c – T a Derating si Collector-Emitter Voltage V C E (V) 1000 1000 at 500 100 he 100 0.1 ite 50 0.5 Time t(ms) 0.5 0.05 10 1 fin 0.05 0.01 5 1 0.1 1.2 In Without Heatsink Natural Cooling 1.0 ith 1 0.8 W Collecto r Cur rent I C (A) s 0.5 0.1 1 5 µs 0µ 10 10 s 0.6 2 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 1m 0.4 Collector Current I C (A) Collector Current I C (A) 5 Transient Thermal Resistance t on • t st g• t f (µs) 5 t s tg N 0.05 0.2 θ j-a – t Characteristics Maxim um Power Dissipatio n P C ( W) 5 0.02 Switching T im e ec o R 10 ot D C Cur r ent Gai n h F E –55˚C 0 Base-Emittor Voltage V B E (V) 10 25˚C mp) 1 (V C E =4V) 125˚C 2 Collector Current I C (A) h FE – I C Characteristics (Typical) 50 3 e Te V B E (sat) 1 θ j- a ( ˚C/W) 0 (V CE =4V) 4 en 0 E (Cas 2 C 125˚C 200mA 2 rN 3 Weight : Approx 6.5g a. Part No. b. Lot No. 5 m p) 25˚ C – 5 5 ˚C Collector Current I C (A) 300mA 3.35 I C – V BE Temperature Characteristics (Typical) fo 400 mA 4 0.65 +0.2 -0.1 1.5 Te 500m A d 60 0m A (I C /I B =5) de Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 700mA B Collector Current I C (A) I C – V CE Characteristics (Typical) 5 4.4 es ig IC (A) 1.5 5.45±0.1 D RL (Ω) 0.8 2.15 5.45±0.1 VCC (V) 3.45 ±0.2 ns Tstg 5.5±0.2 ase Tem IC 15.6±0.2 –55˚C (C VEBO 0.8±0.2 µA 23.0±0.3 100max 5.5 800 VCB=800V 1.6 VCEO ICBO ) V Unit Temp 900 Ratings (Case VCBO External Dimensions FM100(TO3PF) (Ta=25°C) Conditions Symbol 25˚C Unit 16.2 Ratings 9.5±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Symbol Application : Switching Regulator and General Purpose 20 3.5 0 Without Heatsink 0 50 100 150 Ambient Temperature Ta(˚C) 99